頁 187 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - 單

記錄 20,307
頁  187/726
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BDW53A-S
Bourns Inc.

TRANS NPN DARL 60V 4A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存6,592
4A
60V
4V @ 40mA, 4A
500µA
750 @ 1.5A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot ZTX614
Fairchild/ON Semiconductor

TRANS NPN DARL 100V 0.8A E-LINE

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-226
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存10,008
800mA
100V
1.25V @ 8mA, 800mA
100nA (ICBO)
10000 @ 500mA, 5V
1W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-226
hot 2SD1801T-TL-E
ON Semiconductor

TRANS NPN 50V 2A TP-FA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
  • Power - Max: 800mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,024
2A
50V
400mV @ 50mA, 1A
100nA (ICBO)
100 @ 100mA, 2V
800mW
150MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
2-TP-FA
DN0150ALP4-7
Diodes Incorporated

TRANS NPN 50V 0.1A DFN1006H4-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 450mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: X2-DFN1006-3
封裝: 3-XFDFN
庫存3,504
100mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
450mW
60MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-XFDFN
X2-DFN1006-3
SMMBTA64LT1G
ON Semiconductor

TRANS PNP DARL 30V 0.5A SOT23

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,496
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
225mW
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PBSS9110T,215
Nexperia USA Inc.

TRANS PNP 100V 1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 480mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,328
1A
100V
320mV @ 100mA, 1A
100nA
150 @ 500mA, 5V
480mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot ZXTPS720MCTA
Diodes Incorporated

TRANS PNP 40V 3A DFN

  • Transistor Type: PNP + Diode (Isolated)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
  • Power - Max: 3W
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
封裝: 8-WDFN Exposed Pad
庫存144,000
3A
40V
370mV @ 250mA, 2.5A
25nA
60 @ 1.5A, 2V
3W
190MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x2)
hot BC857BLP4-7B
Diodes Incorporated

TRANS PNP 45V 0.1A DFN1006H4-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: X2-DFN1006-3
封裝: 3-XFDFN
庫存309,000
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
250mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-XFDFN
X2-DFN1006-3
hot KST13MTF
Fairchild/ON Semiconductor

TRANS NPN DARL 30V 0.3A SOT23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存301,176
300mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
350mW
125MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot ZTX551
Diodes Incorporated

TRANS PNP 60V 1A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3
庫存289,872
1A
60V
350mV @ 15mA, 150mA
100nA (ICBO)
50 @ 150mA, 10V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot ZXT13P12DE6TA
Diodes Incorporated

TRANS PNP 12V 4A SOT23-6

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 175mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 55MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
封裝: SOT-23-6
庫存989,004
4A
12V
175mV @ 400mA, 4A
100nA
300 @ 1A, 2V
1.1W
55MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot MJE182STU
Fairchild/ON Semiconductor

TRANS NPN 80V 3A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
封裝: TO-225AA, TO-126-3
庫存190,548
3A
80V
1.7V @ 600mA, 3A
100nA (ICBO)
50 @ 100mA, 1V
1.5W
50MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
PN2222ATF
Fairchild/ON Semiconductor

TRANS NPN 40V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
庫存137,484
1A
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
90025-06TX
Microchip Technology

TRANS NPN TO66

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
NTE2638
NTE Electronics, Inc

TRANS NPN DARL 400V 7A TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 250mA, 5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2.5A, 5V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
7 A
400 V
2V @ 250mA, 5A
250µA
150 @ 2.5A, 5V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
JANS2N3741U4
Microchip Technology

TRANS PNP 80V 4A U4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
封裝: -
Request a Quote
4 A
80 V
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
25 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
BDW93B-BP
Micro Commercial Co

TRANS NPN 80V 12A TO220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
  • Power - Max: 80 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: -
Request a Quote
12 A
80 V
3V @ 100mA, 10A
100µA (ICBO)
1000 @ 3A, 3V
80 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
JANTXV2N5154U3
Microchip Technology

TRANS NPN 80V 0.001A U3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U3 (SMD-0.5)
封裝: -
Request a Quote
1 mA
80 V
1.5V @ 500mA, 5A
1mA
70 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U3 (SMD-0.5)
SPS8913QRLRMG
onsemi

SS TO92 GP XSTR NPN SPCL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JAN2N2481
Microchip Technology

TRANS NPN 15V 0.01A TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 mA
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
封裝: -
Request a Quote
10 mA
15 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2DA1213YQ-13
Diodes Incorporated

TRANS PNP 50V 2A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: -
庫存7,500
2 A
50 V
500mV @ 50mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
1 W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
2SC2960E-SPA-AC
onsemi

BIP NPN 0.15A 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTX2N3741U4
Microchip Technology

TRANS PNP 80V 4A U4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
封裝: -
Request a Quote
4 A
80 V
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
25 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
BC846BT-TR-PBFREE
Central Semiconductor Corp

TRANS NPN 65V 0.1A SOT523

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SOT-523
封裝: -
庫存24,882
100 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-89, SOT-490
SOT-523
ZXTP07060BGQTC
Diodes Incorporated

Pwr Mid Perf Transistor SOT223 T

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
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JANTXV2N6438
Microchip Technology

TRANS PNP 120V 25A TO3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封裝: -
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25 A
120 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
BCX51-10-QF
Nexperia USA Inc.

BCX51-10-Q/SOT89/MPT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: -
庫存12,000
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
500 mW
145MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NTE187
NTE Electronics, Inc

TRANS PNP 60V 3A TO202

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 1V
  • Power - Max: 2.1 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-202 Long Tab
  • Supplier Device Package: TO-202
封裝: -
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3 A
60 V
500mV @ 50mA, 1A
10µA
100 @ 200mA, 1V
2.1 W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-202 Long Tab
TO-202