頁 21 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
MMUN2131LT1G	ON Semiconductor	TRANS PREBIAS PNP 246MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,624	100mA	50V	2.2k	2.2k	8 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJY4007R	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 200MW SOT523F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SOT-523F	封裝: SC-89, SOT-490	庫存4,336	100mA	50V	22k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	SC-89, SOT-490	SOT-523F
PDTA114TS,126	NXP	TRANS PREBIAS PNP 500MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存5,024	100mA	50V	10k	-	200 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4314RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存5,600	100mA	50V	4.7k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BCR148E6433HTMA1	Infineon Technologies	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,136	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
DDTB143EU-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存3,088	500mA	50V	4.7k	4.7k	47 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
NSVMMUN2233LT3G	ON Semiconductor	TRANS PREBIAS NPN 0.246W SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存7,488	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
DTA143EET1G	ON Semiconductor	TRANS PREBIAS PNP 200MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	封裝: SC-75, SOT-416	庫存2,672	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
DTC015TMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 50V VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: SOT-723	庫存4,944	100mA	50V	100k	-	100 @ 5mA, 10V	150mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-723	VMT3
RN2106ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	封裝: SC-101, SOT-883	庫存99,048	80mA	50V	4.7k	47k	80 @ 10mA, 5V	150mV @ 250µA, 5mA	500nA	-	100mW	Surface Mount	SC-101, SOT-883	CST3
DTA123ECAT116	Rohm Semiconductor	PNP -100MA -50V DIGITAL TRANSIST Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: TO-236-3, SC-59, SOT-23-3	庫存28,080	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
RN1102T5LFT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: SC-75, SOT-416	庫存2,144	100mA	50V	10k	10k	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SC-75, SOT-416	SSM
DTA144WUAT106	Rohm Semiconductor	TRANS PREBIAS PNP 200MW UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: SC-70, SOT-323	庫存4,816	30mA	50V	47k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	UMT3
DTA113ZKAT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,040	100mA	50V	1k	10k	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DDTC124XE-7	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封裝: SOT-523	庫存27,642	100mA	50V	22k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-523	SOT-523
PDTC123EU,115	Nexperia USA Inc.	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存148,722	100mA	50V	2.2k	2.2k	30 @ 20mA, 5V	150mV @ 500µA, 10mA	1µA	-	200mW	Surface Mount	SC-70, SOT-323	SOT-323-3
DDTC123TUA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存22,560	100mA	50V	2.2k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DRC2114T0L	Panasonic Electronic Components	TRANS PREBIAS NPN 200MW MINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B	封裝: TO-236-3, SC-59, SOT-23-3	庫存51,258	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B
DDTC123YUA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存91,764	100mA	50V	2.2k	10k	33 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
RN1413-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: -	庫存9,000	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
DTA114ESA-AP	Micro Commercial Co	TRANS PREBIAS PNP 50V TO92S Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	封裝: -	Request a Quote	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
RN2113MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存24,000	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150 mW	Surface Mount	SOT-723	VESM
DTA143ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存2,550	100 mA	-	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
MMDTC124EE-AQ	Diotec Semiconductor	IC Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封裝: -	Request a Quote	30 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	-	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SOT-523	SOT-523
RN2423-TE85L-F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: -	庫存18,090	800 mA	50 V	4.7 kOhms	4.7 kOhms	70 @ 100mA, 1V	250mV @ 1mA, 50mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
RN2107-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存165	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
DTC143XCAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存36,000	100 mA	-	4.7 kOhms	10 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
RN2303-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封裝: -	庫存18,000	100 mA	50 V	22 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70

MMUN2131LT1G

ON Semiconductor

TRANS PREBIAS PNP 246MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,624

100mA

50V

2.2k

8 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

246mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

FJY4007R

Fairchild/ON Semiconductor

TRANS PREBIAS PNP 200MW SOT523F

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523F

封裝: SC-89, SOT-490

庫存4,336

100mA

50V

22k

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

SC-89, SOT-490

SOT-523F

PDTA114TS,126

NXP

TRANS PREBIAS PNP 500MW TO92-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存5,024

100mA

50V

10k

-

200 @ 1mA, 5V

150mV @ 500µA, 10mA

1µA

-

500mW

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

FJN4314RBU

Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存5,600

100mA

50V

4.7k

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

300mW

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BCR148E6433HTMA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,136

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

100MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

DDTB143EU-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存3,088

500mA

50V

4.7k

47 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

NSVMMUN2233LT3G

ON Semiconductor

TRANS PREBIAS NPN 0.246W SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存7,488

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

246mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

DTA143EET1G

ON Semiconductor

TRANS PREBIAS PNP 200MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

封裝: SC-75, SOT-416

庫存2,672

100mA

50V

4.7k

15 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

200mW

Surface Mount

SC-75, SOT-416

DTC015TMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: SOT-723

庫存4,944

100mA

50V

100k

-

100 @ 5mA, 10V

150mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-723

VMT3

RN2106ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

封裝: SC-101, SOT-883

庫存99,048

80mA

50V

4.7k

47k

80 @ 10mA, 5V

150mV @ 250µA, 5mA

500nA

-

100mW

Surface Mount

SC-101, SOT-883

CST3

DTA123ECAT116

Rohm Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: TO-236-3, SC-59, SOT-23-3

庫存28,080

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

RN1102T5LFT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: SC-75, SOT-416

庫存2,144

100mA

50V

10k

50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SC-75, SOT-416

SSM

DTA144WUAT106

Rohm Semiconductor

TRANS PREBIAS PNP 200MW UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: SC-70, SOT-323

庫存4,816

30mA

50V

47k

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

UMT3

DTA113ZKAT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,040

100mA

50V

1k

10k

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DDTC124XE-7

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封裝: SOT-523

庫存27,642

100mA

50V

22k

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-523

PDTC123EU,115

Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存148,722

100mA

50V

2.2k

30 @ 20mA, 5V

150mV @ 500µA, 10mA

1µA

-

200mW

Surface Mount

SC-70, SOT-323

SOT-323-3

DDTC123TUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存22,560

100mA

50V

2.2k

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DRC2114T0L

Panasonic Electronic Components

TRANS PREBIAS NPN 200MW MINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B

封裝: TO-236-3, SC-59, SOT-23-3

庫存51,258

100mA

50V

10k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

DDTC123YUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存91,764

100mA

50V

2.2k

10k

33 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

RN1413-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: -

庫存9,000

100 mA

50 V

47 kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

DTA114ESA-AP

Micro Commercial Co

TRANS PREBIAS PNP 50V TO92S

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

封裝: -

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100 mA

50 V

10 kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

RN2113MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存24,000

100 mA

50 V

47 kOhms

-

120 @ 1mA, 5V

300mV @ 500µA, 5mA

100nA (ICBO)

-

150 mW

Surface Mount

SOT-723

VESM

DTA143ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存2,550

100 mA

-

4.7 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

MMDTC124EE-AQ

Diotec Semiconductor

IC

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封裝: -

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30 mA

50 V

22 kOhms

56 @ 5mA, 5V

-

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SOT-523

RN2423-TE85L-F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: -

庫存18,090

800 mA

50 V

4.7 kOhms

70 @ 100mA, 1V

250mV @ 1mA, 50mA

500nA

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

RN2107-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存165

100 mA

50 V

10 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

100 mW

Surface Mount

SC-75, SOT-416

SSM

DTC143XCAHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存36,000

100 mA

-

4.7 kOhms

10 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

RN2303-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封裝: -

庫存18,000

100 mA

50 V

22 kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

100 mW

Surface Mount

SC-70, SOT-323

SC-70