頁 109 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
UNR92A1G0L	Panasonic Electronic Components	TRANS PREBIAS NPN 125MW SSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	封裝: SC-89, SOT-490	庫存4,832	80mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F3
MUN2211JT1	ON Semiconductor	TRANS PREBIAS NPN 2.7W SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	封裝: TO-236-3, SC-59, SOT-23-3	庫存7,472	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
MMUN2230LT1	ON Semiconductor	TRANS PREBIAS NPN 246MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存466,680	100mA	50V	1k	1k	3 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BCR198WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存7,792	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
PDTA114YMB,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006B (0.6x1)	封裝: 3-XFDFN	庫存2,992	100mA	50V	10k	47k	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	180MHz	250mW	Surface Mount	3-XFDFN	3-DFN1006B (0.6x1)
NSVMUN2233T1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,808	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
DDTC142TU-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存5,312	100mA	50V	470	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	200MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DTC143ZUBTL	Rohm Semiconductor	TRANS PREBIAS NPN 200MW UMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	封裝: SC-85	庫存216,000	100mA	50V	4.7k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	SC-85	UMT3F
PBRN113ET,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,008	600mA	40V	1k	1k	180 @ 300mA, 5V	1.15V @ 8mA, 800mA	500nA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
DRC3124E0L	Panasonic Electronic Components	TRANS PREBIAS NPN 100MW SSSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B	封裝: SOT-723	庫存240,000	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	100mW	Surface Mount	SOT-723	SSSMini3-F2-B
MUN5233T1G	ON Semiconductor	TRANS PREBIAS NPN 202MW SC70-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 202mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	封裝: SC-70, SOT-323	庫存2,752	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	202mW	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
DDTA125TCA-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 200k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存29,040	100mA	50V	200k	-	100 @ 1mA, 5V	300mV @ 50µA, 500µA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
RN1302,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封裝: SC-70, SOT-323	庫存58,632	100mA	50V	10k	10k	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SC-70, SOT-323	USM
DDTA123TCA-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存23,424	100mA	50V	2.2k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DTC144TMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 150MW VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: SOT-723	庫存70,164	100mA	50V	47k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VMT3
DTC114YEBTL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	封裝: SC-89, SOT-490	庫存37,200	70mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTC114YETL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: SC-75, SOT-416	庫存202,200	70mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3
DTB123YCHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 0.5A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存936	500 mA	-	2.2 kOhms	10 kOhms	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	-	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
NTE2358	NTE Electronics, Inc	TRANS PREBIAS PNP 50V TO92S Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	封裝: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	200 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
NTE2359	NTE Electronics, Inc	TRANS PREBIAS NPN 50V TO92S Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	封裝: -	Request a Quote	100 mA	50 V	47 kOhms	47 kOhms	50 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
RN1106-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存17,640	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
PDTA124XQBZ	Nexperia USA Inc.	TRANS PREBIAS PNP 50V 0.1A 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180 MHz Power - Max: 340 mW Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	封裝: -	庫存15,000	100 mA	50 V	22 kOhms	47 kOhms	80 @ 5mA, 5V	100mV @ 500µA, 10mA	100nA	180 MHz	340 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
MMBTRC117SS	Diotec Semiconductor	IC Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: -	Request a Quote	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 10mA, 5V	-	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
DTC143TU3T106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存627	100 mA	50 V	4.7 kOhms	-	100 @ 1mA, 5V	150mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
MMDT5112W	Diotec Semiconductor	IC Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	100 mA	-	22 kOhms	22 kOhms	60 @ 10mA, 5V	-	100nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA143ZCAHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存8,181	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC124ESA-BP	Micro Commercial Co	TRANS PREBIAS NPN 50V TO92S Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	封裝: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
DTA144TU3HZGT106	Rohm Semiconductor	PNP, SOT-323, R1 ALONE TYPE DIGI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	Request a Quote	100 mA	50 V	47 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3

UNR92A1G0L

Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3

封裝: SC-89, SOT-490

庫存4,832

80mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F3

MUN2211JT1

ON Semiconductor

TRANS PREBIAS NPN 2.7W SC59

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

封裝: TO-236-3, SC-59, SOT-23-3

庫存7,472

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

230mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

MMUN2230LT1

ON Semiconductor

TRANS PREBIAS NPN 246MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存466,680

100mA

50V

1k

3 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

246mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BCR198WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存7,792

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

PDTA114YMB,315

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)

封裝: 3-XFDFN

庫存2,992

100mA

50V

10k

47k

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

180MHz

250mW

Surface Mount

3-XFDFN

3-DFN1006B (0.6x1)

NSVMUN2233T1G

ON Semiconductor

TRANS PREBIAS NPN 230MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,808

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

230mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

DDTC142TU-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存5,312

100mA

50V

470

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

200MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DTC143ZUBTL

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

封裝: SC-85

庫存216,000

100mA

50V

4.7k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

SC-85

UMT3F

PBRN113ET,215

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,008

600mA

40V

1k

180 @ 300mA, 5V

1.15V @ 8mA, 800mA

500nA

-

250mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

DRC3124E0L

Panasonic Electronic Components

TRANS PREBIAS NPN 100MW SSSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B

封裝: SOT-723

庫存240,000

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

100mW

Surface Mount

SOT-723

SSSMini3-F2-B

MUN5233T1G

ON Semiconductor

TRANS PREBIAS NPN 202MW SC70-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

封裝: SC-70, SOT-323

庫存2,752

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

202mW

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

DDTA125TCA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 200k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存29,040

100mA

50V

200k

-

100 @ 1mA, 5V

300mV @ 50µA, 500µA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

RN1302,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封裝: SC-70, SOT-323

庫存58,632

100mA

50V

10k

50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SC-70, SOT-323

USM

DDTA123TCA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存23,424

100mA

50V

2.2k

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

DTC144TMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 150MW VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: SOT-723

庫存70,164

100mA

50V

47k

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-723

VMT3

DTC114YEBTL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

封裝: SC-89, SOT-490

庫存37,200

70mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTC114YETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: SC-75, SOT-416

庫存202,200

70mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SC-75, SOT-416

EMT3

DTB123YCHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 0.5A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存936

500 mA

-

2.2 kOhms

10 kOhms

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

-

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

NTE2358

NTE Electronics, Inc

TRANS PREBIAS PNP 50V TO92S

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

封裝: -

Request a Quote

100 mA

50 V

22 kOhms

50 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

200 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

NTE2359

NTE Electronics, Inc

TRANS PREBIAS NPN 50V TO92S

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

封裝: -

Request a Quote

100 mA

50 V

47 kOhms

50 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

RN1106-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存17,640

100 mA

50 V

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

100 mW

Surface Mount

SC-75, SOT-416

SSM

PDTA124XQBZ

Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

封裝: -

庫存15,000

100 mA

50 V

22 kOhms

47 kOhms

80 @ 5mA, 5V

100mV @ 500µA, 10mA

100nA

180 MHz

340 mW

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1110D-3

MMBTRC117SS

Diotec Semiconductor

IC

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: -

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100 mA

50 V

2.2 kOhms

20 @ 10mA, 5V

-

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

DTC143TU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存627

100 mA

50 V

4.7 kOhms

-

100 @ 1mA, 5V

150mV @ 250µA, 5mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

MMDT5112W

Diotec Semiconductor

IC

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

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100 mA

-

22 kOhms

60 @ 10mA, 5V

-

100nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

DTA143ZCAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存8,181

100 mA

50 V

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC124ESA-BP

Micro Commercial Co

TRANS PREBIAS NPN 50V TO92S

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

封裝: -

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100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

DTA144TU3HZGT106

Rohm Semiconductor

PNP, SOT-323, R1 ALONE TYPE DIGI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

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100 mA

50 V

47 kOhms

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3