頁 104 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
FJY4004R	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 200MW SOT523F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SOT-523F	封裝: SC-89, SOT-490	庫存5,824	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	SC-89, SOT-490	SOT-523F
UNR211100L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,368,000	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
NSBA124EF3T5G	ON Semiconductor	TRANS PREBIAS PNP 254MW SOT1123 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	封裝: SOT-1123	庫存3,088	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	254mW	Surface Mount	SOT-1123	SOT-1123
PDTD113ZUF	Nexperia USA Inc.	TRANS PREBIAS NPN 0.425W Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 225MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存6,912	500mA	50V	1k	10k	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	225MHz	300mW	Surface Mount	SC-70, SOT-323	SOT-323-3
SMUN2214T1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	封裝: TO-236-3, SC-59, SOT-23-3	庫存35,280	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
NSVMUN2212T1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,848	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
DTC114TCAT116	Rohm Semiconductor	NPN 100MA 50V DIGITAL TRANSISTOR Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: TO-236-3, SC-59, SOT-23-3	庫存26,886	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DRA5143Z0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	封裝: SC-85	庫存6,976	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DRA5124T0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	封裝: SC-85	庫存6,832	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DRA3123J0L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B	封裝: SOT-723	庫存3,472	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	100mW	Surface Mount	SOT-723	SSSMini3-F2-B
DTC123EKAT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,080,000	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DDTB142JU-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存25,200	500mA	50V	470	10k	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DDTA113TUA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存648,000	100mA	50V	1k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTC143ZU,115	Nexperia USA Inc.	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存234,486	100mA	50V	4.7k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	200mW	Surface Mount	SC-70, SOT-323	SOT-323-3
DTC143ZET1G	ON Semiconductor	TRANS PREBIAS NPN 200MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	封裝: SC-75, SOT-416	庫存21,360	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
MMUN2133LT1G	ON Semiconductor	TRANS PREBIAS PNP 246MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存894,000	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
PDTC123JU-ZLX	NXP	TRANS PREBIAS NPN SC70 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FJV3101RLIMTF	Fairchild Semiconductor	TRANS PREBIAS Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DTC143TE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存9,000	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
RN2408-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: -	庫存18,000	100 mA	50 V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
DTC113ZMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: -	庫存14,685	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTC114YE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存7,470	100 mA	50 V	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
CE1F3P-AZ	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 70 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 1 W Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: -	封裝: -	Request a Quote	2 A	70 V	2.2 kOhms	10 kOhms	500 @ 2A, 5V	-	100nA (ICBO)	-	1 W	Through Hole	3-SSIP	-
RN2107MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存24,000	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
DTC143ZUAHE3-TP	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTC114YU-QX	Nexperia USA Inc.	TRANS PREBIAS NPN 50V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	100 mA	50 V	10 kOhms	47 kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	230 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA115EMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: -	Request a Quote	100 mA	50 V	100 kOhms	100 kOhms	82 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTA113ZE3TL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: -	庫存7,950	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3

FJY4004R

Fairchild/ON Semiconductor

TRANS PREBIAS PNP 200MW SOT523F

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523F

封裝: SC-89, SOT-490

庫存5,824

100mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

SC-89, SOT-490

SOT-523F

UNR211100L

Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,368,000

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

NSBA124EF3T5G

ON Semiconductor

TRANS PREBIAS PNP 254MW SOT1123

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123

封裝: SOT-1123

庫存3,088

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

254mW

Surface Mount

SOT-1123

PDTD113ZUF

Nexperia USA Inc.

TRANS PREBIAS NPN 0.425W

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 225MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存6,912

500mA

50V

1k

10k

70 @ 50mA, 5V

100mV @ 2.5mA, 50mA

500nA

225MHz

300mW

Surface Mount

SC-70, SOT-323

SOT-323-3

SMUN2214T1G

ON Semiconductor

TRANS PREBIAS NPN 230MW SC59

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

封裝: TO-236-3, SC-59, SOT-23-3

庫存35,280

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

230mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

NSVMUN2212T1G

ON Semiconductor

TRANS PREBIAS NPN 230MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,848

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

230mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

DTC114TCAT116

Rohm Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: TO-236-3, SC-59, SOT-23-3

庫存26,886

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DRA5143Z0L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

封裝: SC-85

庫存6,976

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

SC-85

SMini3-F2-B

DRA5124T0L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

封裝: SC-85

庫存6,832

100mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

SC-85

SMini3-F2-B

DRA3123J0L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B

封裝: SOT-723

庫存3,472

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

100mW

Surface Mount

SOT-723

SSSMini3-F2-B

DTC123EKAT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,080,000

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DDTB142JU-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存25,200

500mA

50V

470

10k

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DDTA113TUA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存648,000

100mA

50V

1k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

PDTC143ZU,115

Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存234,486

100mA

50V

4.7k

47k

100 @ 10mA, 5V

100mV @ 250µA, 5mA

1µA

-

200mW

Surface Mount

SC-70, SOT-323

SOT-323-3

DTC143ZET1G

ON Semiconductor

TRANS PREBIAS NPN 200MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

封裝: SC-75, SOT-416

庫存21,360

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

200mW

Surface Mount

SC-75, SOT-416

MMUN2133LT1G

ON Semiconductor

TRANS PREBIAS PNP 246MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存894,000

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

246mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

PDTC123JU-ZLX

NXP

TRANS PREBIAS NPN SC70

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

FJV3101RLIMTF

Fairchild Semiconductor

TRANS PREBIAS

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DTC143TE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存9,000

100 mA

50 V

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

RN2408-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: -

庫存18,000

100 mA

50 V

22 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

DTC113ZMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: -

庫存14,685

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTC114YE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存7,470

100 mA

50 V

47 kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

CE1F3P-AZ

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 1 W
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: -

封裝: -

Request a Quote

2 A

70 V

2.2 kOhms

10 kOhms

500 @ 2A, 5V

-

100nA (ICBO)

-

1 W

Through Hole

3-SSIP

-

RN2107MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存24,000

100 mA

50 V

10 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 500µA, 5mA

500nA

-

150 mW

Surface Mount

SOT-723

VESM

DTC143ZUAHE3-TP

Micro Commercial Co

BIPOLAR TRANSISTORS

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

Request a Quote

100 mA

50 V

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

PDTC114YU-QX

Nexperia USA Inc.

TRANS PREBIAS NPN 50V SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

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100 mA

50 V

10 kOhms

47 kOhms

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

230 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

DTA115EMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: -

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100 mA

50 V

100 kOhms

82 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTA113ZE3TL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: -

庫存7,950

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3