頁 57 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 949T E6327	Infineon Technologies	TRANSISTOR RF BIP SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封裝: SC-75, SOT-416	庫存7,104	10V	9GHz	1dB ~ 2.5dB @ 1GHz	20dB	250mW	100 @ 5mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
MRF4427GR2	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,672	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC5753-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 13.5dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	封裝: SOT-343F	庫存14,856	6V	12GHz	1.7dB @ 2GHz	13.5dB	205mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
UMIL25	Microsemi Corporation	TRANS RF BIPO 70W 3A 55HV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 8.9db ~ 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	封裝: 55HV	庫存6,064	33V	225MHz ~ 400MHz	-	8.9db ~ 10dB	70W	10 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	55HV	55HV
UPA811T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,280	10V	8GHz	1.9dB @ 2GHz	7.5dB	200mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KSC1730OBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存4,000	15V	1.1GHz	-	-	250mW	70 @ 5mA, 10V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC1393RTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存4,064	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	40 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE85619-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封裝: SOT-523	庫存5,200	12V	4.5GHz	1.2dB @ 1GHz	9dB	100mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
BFG480W,135	NXP	TRANS RF NPN 21GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz Gain: 16dB Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	封裝: SC-82A, SOT-343	庫存5,680	4.5V	21GHz	1.2dB ~ 1.8dB @ 900MHz ~ 2GHz	16dB	360mW	40 @ 80mA, 2V	250mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
BFP182RE7764HTSA1	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: PG-SOT143R-4	封裝: SOT-143R	庫存6,496	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SOT-143R	PG-SOT143R-4
MAPRST0912-350	M/A-Com Technology Solutions	TRANS NPN 350W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.4dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 32.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存7,312	65V	1.215GHz	-	9.4dB	350W	-	32.5A	200°C (TJ)	Chassis Mount	-	-
MS2554	Microsemi Corporation	TRANS RF BIPO 600W 17.8A SO42 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封裝: M218	庫存4,688	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C (TJ)	Chassis Mount	M218	M218
MS1076	Microsemi Corporation	TRANS RF BIPO 320W 16A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	封裝: M174	庫存5,360	35V	30MHz	-	12dB	320W	15 @ 7A, 5V	16A	200°C (TJ)	Chassis Mount	M174	M174
CPH6020-TL-E	ON Semiconductor	TRANS NPN 8V 0.15A CPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封裝: SOT-23-6 Thin, TSOT-23-6	庫存6,864	8V	16GHz	1.2dB @ 1GHz	13.5dB	700mW	60 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
MMBTH10M3T5G	ON Semiconductor	TRANS NPN VHF/UHF 25V SOT-723 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 265mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	封裝: SOT-723	庫存3,392	25V	650MHz	-	-	265mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
BFR360FH6327XTSA1	Infineon Technologies	TRANS RF NPN 6V 35MA TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 15.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存6,128	9V	14GHz	1dB @ 1.8GHz	15.5dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
MRF317	M/A-Com Technology Solutions	TRANS RF NPN 35V 12A 316-01 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 100W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 316-01 Supplier Device Package: 316-01, STYLE 1	封裝: 316-01	庫存5,504	35V	-	-	10dB	100W	10 @ 5A, 5V	12A	-	Chassis Mount	316-01	316-01, STYLE 1
MMBT918	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存69,672	15V	600MHz	6dB @ 60MHz	15dB	225mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MPSH17RLRA	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
82092H	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRF426	MACOM Technology Solutions	TRANS RF NPN 35V 3A 211-07 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 25dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-07 Supplier Device Package: 211-07, STYLE 1	封裝: -	Request a Quote	35V	-	-	25dB	25W	10 @ 1A, 5V	3A	-	Chassis Mount	211-07	211-07, STYLE 1
2SC3585-A	CEL	RF TRANS NPN 10V 10GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	封裝: -	Request a Quote	10V	10GHz	1.8dB @ 2GHz	10dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
2SC3356-A	CEL	RF TRANS NPN 12V 7GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	封裝: -	Request a Quote	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
2SC5751-A	CEL	RF TRANS NPN 6V 15GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 16dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: -	封裝: -	Request a Quote	6V	15GHz	1.7dB @ 2GHz	16dB	205mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SOT-343F	-
66099	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS2554A	Microsemi Corporation	RF TRANS NPN 65V 1.15GHZ M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封裝: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C	Chassis Mount	M216	M216
CP302-MPSH10-CT20	Central Semiconductor Corp	RF TRANS NPNUHF/VHF Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
BFP640E6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: -	Request a Quote	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	24dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4

BFR 949T E6327

Infineon Technologies

TRANSISTOR RF BIP SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

庫存7,104

10V

9GHz

1dB ~ 2.5dB @ 1GHz

20dB

250mW

100 @ 5mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

MRF4427GR2

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,672

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC5753-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13.5dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

封裝: SOT-343F

庫存14,856

6V

12GHz

1.7dB @ 2GHz

13.5dB

205mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-343F

UMIL25

Microsemi Corporation

TRANS RF BIPO 70W 3A 55HV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 8.9db ~ 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

封裝: 55HV

庫存6,064

33V

225MHz ~ 400MHz

-

8.9db ~ 10dB

70W

10 @ 500mA, 5V

3A

200°C (TJ)

Chassis Mount

55HV

UPA811T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,280

10V

8GHz

1.9dB @ 2GHz

7.5dB

200mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KSC1730OBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存4,000

15V

1.1GHz

-

250mW

70 @ 5mA, 10V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC1393RTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存4,064

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

40 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE85619-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封裝: SOT-523

庫存5,200

12V

4.5GHz

1.2dB @ 1GHz

9dB

100mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-523

BFG480W,135

NXP

TRANS RF NPN 21GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain: 16dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

封裝: SC-82A, SOT-343

庫存5,680

4.5V

21GHz

1.2dB ~ 1.8dB @ 900MHz ~ 2GHz

16dB

360mW

40 @ 80mA, 2V

250mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

BFP182RE7764HTSA1

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: PG-SOT143R-4

封裝: SOT-143R

庫存6,496

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SOT-143R

PG-SOT143R-4

MAPRST0912-350

M/A-Com Technology Solutions

TRANS NPN 350W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9.4dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 32.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,312

65V

1.215GHz

-

9.4dB

350W

-

32.5A

200°C (TJ)

Chassis Mount

-

MS2554

Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封裝: M218

庫存4,688

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C (TJ)

Chassis Mount

M218

MS1076

Microsemi Corporation

TRANS RF BIPO 320W 16A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

封裝: M174

庫存5,360

35V

30MHz

-

12dB

320W

15 @ 7A, 5V

16A

200°C (TJ)

Chassis Mount

M174

CPH6020-TL-E

ON Semiconductor

TRANS NPN 8V 0.15A CPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13.5dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,864

8V

16GHz

1.2dB @ 1GHz

13.5dB

700mW

60 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

MMBTH10M3T5G

ON Semiconductor

TRANS NPN VHF/UHF 25V SOT-723

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 265mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

封裝: SOT-723

庫存3,392

25V

650MHz

-

265mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

SOT-723

BFR360FH6327XTSA1

Infineon Technologies

TRANS RF NPN 6V 35MA TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存6,128

9V

14GHz

1dB @ 1.8GHz

15.5dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

MRF317

M/A-Com Technology Solutions

TRANS RF NPN 35V 12A 316-01

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 100W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 316-01
Supplier Device Package: 316-01, STYLE 1

封裝: 316-01

庫存5,504

35V

-

10dB

100W

10 @ 5A, 5V

12A

-

Chassis Mount

316-01

316-01, STYLE 1

MMBT918

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存69,672

15V

600MHz

6dB @ 60MHz

15dB

225mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MPSH17RLRA

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

82092H

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MRF426

MACOM Technology Solutions

TRANS RF NPN 35V 3A 211-07

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 25dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-07
Supplier Device Package: 211-07, STYLE 1

封裝: -

Request a Quote

35V

-

25dB

25W

10 @ 1A, 5V

3A

-

Chassis Mount

211-07

211-07, STYLE 1

2SC3585-A

CEL

RF TRANS NPN 10V 10GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

封裝: -

Request a Quote

10V

10GHz

1.8dB @ 2GHz

10dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2SC3356-A

CEL

RF TRANS NPN 12V 7GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

封裝: -

Request a Quote

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2SC5751-A

CEL

RF TRANS NPN 6V 15GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 16dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: -

封裝: -

Request a Quote

6V

15GHz

1.7dB @ 2GHz

16dB

205mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SOT-343F

-

66099

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MS2554A

Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封裝: -

Request a Quote

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C

Chassis Mount

M216

CP302-MPSH10-CT20

Central Semiconductor Corp

RF TRANS NPNUHF/VHF

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die

BFP640E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: -

Request a Quote

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

24dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4