頁 53 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - RF

記錄 1,633
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF8372GR1
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存7,216
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MRF5812G
Microsemi Corporation

TRANS NPN 15V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存83,868
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MRF5812
Microsemi Corporation

TRANS NPN 15V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,920
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2SC3356-T1B-R24-A
CEL

SAME AS NE85633 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,888
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot JANTXV2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
封裝: TO-72-3 Metal Can
庫存3,856
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
2SC5752-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封裝: SC-82A, SOT-343
庫存3,328
6V
12GHz
1.7dB @ 2GHz
13dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot 2307
Microsemi Corporation

TRANS BIPO 20V 7W 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 42V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 20.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
封裝: 55BT
庫存360,000
42V
2.3GHz
-
8dB
20.5W
10 @ 500mA, 5V
1A
200°C (TJ)
Chassis Mount
55BT
55BT
hot AT-42086-TR1G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
  • Gain: 9dB ~ 13dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
封裝: SOT-86
庫存208,332
12V
8GHz
1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
9dB ~ 13dB
500mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
PN5179
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 12V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存4,496
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot KSC2757YMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存108,000
15V
1.1GHz
-
-
150mW
120 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot FMMT5179TA
Diodes Incorporated

TRANS RF NPN 12V 50MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,040,540
12V
2GHz
4.5dB @ 200MHz
15dB
330mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot ZTX325
Diodes Incorporated

TRANS HF NPN 15V 1300MHZ E-LINE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3
庫存111,096
15V
1.3GHz
5dB @ 500MHz
53dB
350mW
25 @ 2mA, 1V
50mA
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
BFQ591,115
NXP

TRANS NPN 15V 7GHZ SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 2.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: TO-243AA
庫存4,848
15V
7GHz
-
-
2.25W
60 @ 70mA, 8V
200mA
175°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
PBR951,215
NXP

TRANSISTOR NPN UHF 100MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 365mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,736
10V
8GHz
1.3dB ~ 2dB @ 1GHz ~ 2GHz
-
365mW
50 @ 5mA, 6V
100mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFG93A,215
NXP

TRANS NPN 12V 35MA SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存4,992
12V
6GHz
1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
-
300mW
40 @ 30mA, 5V
35mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFP420H6801XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封裝: SC-82A, SOT-343
庫存5,264
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
SD1526-01
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 21.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
封裝: M115
庫存2,352
45V
960MHz ~ 1.215GHz
-
9.5dB
21.9W
-
1A
200°C (TJ)
Chassis Mount
M115
M115
NSVF3007SG3T1G
ON Semiconductor

RF TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,056
-
-
-
-
-
-
-
-
-
-
-
HN3C10FUTE85LF
Toshiba Semiconductor and Storage

TRANSISTOR NPN US6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存3,120
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
80 @ 20mA, 10V
80mA
-
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot 2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封裝: TO-236-3, SC-59, SOT-23-3
庫存95,628
12V
7GHz
1.1dB @ 1GHz
11dB
150mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
MRF321
M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.1A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 244-04
  • Supplier Device Package: 244-04, STYLE 1
封裝: 244-04
庫存5,840
33V
-
-
13dB
10W
20 @ 500mA, 5V
1.1A
-
Chassis Mount
244-04
244-04, STYLE 1
NE68039R-T1-A
CEL

TRANSISTOR NPN 2GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
  • Gain: 6.5dB ~ 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
封裝: SOT-143R
庫存2,416
10V
10GHz
1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
6.5dB ~ 11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFY90
Central Semiconductor Corp

TRANS NPN 30V TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封裝: TO-206AF, TO-72-4 Metal Can
庫存14,844
15V
1.4GHz
5.5dB @ 800MHz
23dB
200mW
20 @ 25mA, 1V
25mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MS2275
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5337-AZ
CEL

RF TRANS NPN 15V SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: -
封裝: -
Request a Quote
15V
-
2dB @ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
-
2SC4536-AZ
CEL

RF TRANS NPN 15V SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 7.2dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: -
Request a Quote
15V
-
2dB @ 1GHz
7.2dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NTE316
NTE Electronics, Inc

RF TRANS NPN 15V 1.4GHZ TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封裝: -
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15V
1.4GHz
4.5dB @ 450MHz
15dB
200mW
25 @ 2mA, 5V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
NTE329
NTE Electronics, Inc

RF TRANS NPN 30V TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 2V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封裝: -
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30V
-
-
10dB
5W
10 @ 400mA, 2V
1A
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39