頁 5 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - RF

記錄 1,633
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 193W E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存3,952
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
NE68130-T1-R34-A
CEL

SAME AS 2SC4227 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存3,536
10V
7GHz
1.4dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot 2SC5455-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封裝: TO-253-4, TO-253AA
庫存3,194,964
6V
12GHz
1.5dB @ 2GHz
10dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC4703-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存346,092
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot 2SC5008-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存479,244
10V
8GHz
1.9dB @ 2GHz
7.5dB
125mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
NE46234-T1-SE-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存3,504
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
125 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SC3932GSL
Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
封裝: SC-85
庫存7,392
20V
1.6GHz
-
20dB
150mW
25 @ 2mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
HFA3128RZ96
Intersil

IC TRANSISTOR ARRAY PNP 16-QFN

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
封裝: 16-VFQFN Exposed Pad
庫存3,216
15V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
hot AT-41586-TR1G
Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 8dB ~ 17dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
封裝: SOT-86
庫存278,376
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
8dB ~ 17dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
AT-42086-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
  • Gain: 9dB ~ 13dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
封裝: SOT-86
庫存3,424
12V
8GHz
1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
9dB ~ 13dB
500mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
NE677M04-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
封裝: SOT-343F
庫存5,392
6V
15GHz
1.7dB @ 2GHz
16dB
205mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
MX0912B351Y,114
Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 960W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-439A
  • Supplier Device Package: CDFM2
封裝: SOT-439A
庫存5,440
20V
1.215GHz
-
7.6dB
960W
-
21A
200°C (TJ)
Surface Mount
SOT-439A
CDFM2
BFS505,115
NXP

TRANS NPN 15V 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
封裝: SC-70, SOT-323
庫存3,840
15V
9GHz
1.2dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFG505/X,215
NXP

TRANS RF NPN 9GHZ 15V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存3,264
15V
9GHz
1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFG92A/X,215
NXP

TRANS NPN 15V 25MA 5GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存6,768
15V
5GHz
2dB ~ 3dB @ 1GHz ~ 2GHz
-
400mW
65 @ 15mA, 10V
25mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFP640FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 46GHz
  • Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
  • Gain: 8B ~ 30.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封裝: 4-SMD, Flat Leads
庫存3,632
4.7V
46GHz
0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
8B ~ 30.5dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
MAPR-002729-170M00
M/A-Com Technology Solutions

170W 2.7-3.1 GHZ 100US/10%

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.11dB ~ 9.69dB
  • Power - Max: 170W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 27A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,232
65V
-
-
9.11dB ~ 9.69dB
170W
-
27A
200°C (TJ)
Chassis Mount
-
-
UMIL100A
Microsemi Corporation

TRANS RF BIPO 270W 20A 55JU2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 31V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.2dB ~ 8.5dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JU
  • Supplier Device Package: 55JU
封裝: 55JU
庫存2,752
31V
225MHz ~ 400MHz
-
7.2dB ~ 8.5dB
270W
10 @ 1A, 5V
20A
150°C (TJ)
Chassis Mount
55JU
55JU
hot 2304
Microsemi Corporation

TRANS BIPO 20V 4W 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 10.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
封裝: 55BT
庫存813,336
45V
2.3GHz
-
8dB
10.2W
10 @ 300mA, 5V
600mA
200°C (TJ)
Chassis Mount
55BT
55BT
MS1001
Microsemi Corporation

TRANS RF BIPO 270W 20A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
封裝: M174
庫存5,424
18V
30MHz
-
13dB
270W
20 @ 5A, 5V
20A
200°C (TJ)
Chassis Mount
M174
M174
2SC4626JCL
Panasonic Electronic Components

TRANS NPN 20VCEO 30MA SSMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
封裝: SC-89, SOT-490
庫存2,576
20V
250MHz
2.8dB ~ 4dB @ 5MHz
-
125mW
110 @ 1mA, 10V
30mA
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F1
MMBTH10-TP
Micro Commercial Co

TRANS RF NPN 650MHZ 25V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存71,088
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFP840ESDH6327XTSA1
Infineon Technologies

IC TRANSISTOR RF NPN SOT343-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.25V
  • Frequency - Transition: 80GHz
  • Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
  • Gain: 18.5dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封裝: SC-82A, SOT-343
庫存27,642
2.25V
80GHz
0.85dB @ 5.5GHz
18.5dB
75mW
150 @ 10mA, 1.8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NTE108-1
NTE Electronics, Inc

RF TRANS NPN 15V 600MHZ TO106

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-106-3 Domed
  • Supplier Device Package: TO-106
封裝: -
Request a Quote
15V
600MHz
6dB @ 60MHz
15dB
625mW
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-106-3 Domed
TO-106
2SC4901YK-TR-E
Renesas

2SC4731 - BIPOLAR NPN TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 900MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-CMPAK
封裝: -
Request a Quote
9V
9GHz
1.2dB @ 900MHz
-
100mW
50 @ 20mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-CMPAK
NSVF5501SKT3G
onsemi

RF-TR 10V 70MA FT=5.5GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623/SSFP
封裝: -
庫存21,624
10V
5.5GHz
1.9dB @ 1GHz
11dB
250mW
100 @ 10mA, 5V
70mA
-55°C ~ 150°C (TJ)
Surface Mount
SOT-623F
SOT-623/SSFP
2SC2735JTL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
  • Gain: 21dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
封裝: -
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20V
1.2GHz
6.5dB @ 200MHz
21dB
150mW
40 @ 10mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
2SC4260TI-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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