頁 12 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 360F E6765	Infineon Technologies	TRANSISTOR NPN RF 6V TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 15.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存7,616	9V	14GHz	1dB @ 1.8GHz	15.5dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
PH3134-75S	M/A-Com Technology Solutions	TRANSISTOR 75W 1US 10% Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8.9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存4,528	65V	-	-	7.5dB	75W	-	8.9A	200°C (TJ)	Chassis Mount	-	-
MS2272	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封裝: M216	庫存3,920	65V	960MHz ~ 1.215GHz	-	7.6dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MAX2602ESA	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	庫存99,000	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
NE66219-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封裝: SOT-523	庫存3,296	3.3V	21GHz	1.2dB @ 2GHz	14dB	115mW	60 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
MPSH81_D27Z	Fairchild/ON Semiconductor	TRANS RF PNP 20V 50MA TO-92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,968	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
UPA800T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存7,568	10V	8GHz	1.9dB @ 2GHz	7.5dB	200mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
HFA3127B96	Intersil	IC TRANS ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存190,572	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
BFR92AW,135	NXP	TRANS NPN 25MA 15V 5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存5,616	15V	5GHz	2dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	65 @ 15mA, 10V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFQ149,115	NXP	TRANS PNP 15V 100MA SOT89 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3.3dB @ 500MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封裝: TO-243AA	庫存3,888	15V	5GHz	3.3dB @ 500MHz	-	1W	20 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BFG410W,135	NXP	TRANS RF NPN 22GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz Gain: 21dB Power - Max: 54mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	封裝: SC-82A, SOT-343	庫存2,448	4.5V	22GHz	0.9dB ~ 1.2dB @ 900MHz ~ 2GHz	21dB	54mW	50 @ 10mA, 2V	12mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
MS2210	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封裝: M216	庫存7,104	65V	960MHz ~ 1.215GHz	-	7dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
TAN150	Microsemi Corporation	TRANS RF BIPO 583W 15A 55AT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AT Supplier Device Package: 55AT	封裝: 55AT	庫存3,248	55V	960MHz ~ 1.215GHz	-	7dB	583W	10 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55AT	55AT
MS1261	Microsemi Corporation	TRANS RF BIPO 34W 2.5A M122 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 34W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	封裝: M122	庫存4,112	18V	175MHz	-	12dB	34W	20 @ 250mA, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	M122	M122
SD1274	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M135 Supplier Device Package: M135	封裝: M135	庫存4,576	16V	-	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Surface Mount	M135	M135
2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: 3-SMD, No Lead	庫存6,768	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
AT-32011-TR1G	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 12.5dB ~ 14dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存144,756	5.5V	-	1dB ~ 1.3dB @ 900MHz	12.5dB ~ 14dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
15GN03MA-TL-E	ON Semiconductor	TRANS NPN BIPO 70MA 10V MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Gain: 13dB @ 0.4GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	封裝: SC-70, SOT-323	庫存5,648	10V	1.5GHz	1.6dB @ 0.4GHz	13dB @ 0.4GHz	400mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
BFP840FESDH6327XTSA1	Infineon Technologies	IC TRANSISTOR RF NPN TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Gain: 35dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-TSFP	封裝: SC-82A, SOT-343	庫存2,224	2.6V	85GHz	0.75dB @ 5.5GHz	35dB	75mW	150 @ 10mA, 1.8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	4-TSFP
2N5770	Central Semiconductor Corp	TRANS RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存6,128,100	15V	900MHz	6dB @ 60MHz	-	625mW	50 @ 8mA, 1V	50mA	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BFP640E6327BTSA1	Infineon Technologies	TRANSISTOR NPN SIGE RF SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存3,424	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	24dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFU668F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	封裝: SOT-343F	庫存4,304	-	-	-	-	-	-	-	-	Surface Mount	SOT-343F	SOT-343F
BFR193WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 80MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存96,564	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
SRF4116	MACOM Technology Solutions	TRANSISTOR,1025-1150MHZ,50V,350P Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS1001A	Microsemi Corporation	TRANS RF BIPO 270W 20A Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE64	NTE Electronics, Inc	RF TRANS NPN 15V 4.5GHZ 4SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 12dB Power - Max: 375mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Lead Supplier Device Package: 4-SMD	封裝: -	Request a Quote	15V	4.5GHz	2dB @ 1GHz	12dB	375mW	30 @ 5mA, 5V	30mA	-	Surface Mount	4-SMD, Flat Lead	4-SMD
CP302-MPSH10-WN	Central Semiconductor Corp	RF TRANS NPNUHF/VHF Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
CMPTH10-BK	Central Semiconductor Corp	RF TRANS NPNUHF/VHF SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

BFR 360F E6765

Infineon Technologies

TRANSISTOR NPN RF 6V TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存7,616

9V

14GHz

1dB @ 1.8GHz

15.5dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

PH3134-75S

M/A-Com Technology Solutions

TRANSISTOR 75W 1US 10%

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8.9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,528

65V

-

7.5dB

75W

-

8.9A

200°C (TJ)

Chassis Mount

-

MS2272

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 940W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封裝: M216

庫存3,920

65V

960MHz ~ 1.215GHz

-

7.6dB

940W

10 @ 5A, 5V

24A

200°C (TJ)

Chassis Mount

M216

MAX2602ESA

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

庫存99,000

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

NE66219-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封裝: SOT-523

庫存3,296

3.3V

21GHz

1.2dB @ 2GHz

14dB

115mW

60 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-523

MPSH81_D27Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,968

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

UPA800T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存7,568

10V

8GHz

1.9dB @ 2GHz

7.5dB

200mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

HFA3127B96

Intersil

IC TRANS ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存190,572

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

BFR92AW,135

NXP

TRANS NPN 25MA 15V 5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存5,616

15V

5GHz

2dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

65 @ 15mA, 10V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFQ149,115

NXP

TRANS PNP 15V 100MA SOT89

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封裝: TO-243AA

庫存3,888

15V

5GHz

3.3dB @ 500MHz

-

1W

20 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BFG410W,135

NXP

TRANS RF NPN 22GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain: 21dB
Power - Max: 54mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 12mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

封裝: SC-82A, SOT-343

庫存2,448

4.5V

22GHz

0.9dB ~ 1.2dB @ 900MHz ~ 2GHz

21dB

54mW

50 @ 10mA, 2V

12mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

MS2210

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 940W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封裝: M216

庫存7,104

65V

960MHz ~ 1.215GHz

-

7dB

940W

10 @ 5A, 5V

24A

200°C (TJ)

Chassis Mount

M216

TAN150

Microsemi Corporation

TRANS RF BIPO 583W 15A 55AT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AT
Supplier Device Package: 55AT

封裝: 55AT

庫存3,248

55V

960MHz ~ 1.215GHz

-

7dB

583W

10 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55AT

MS1261

Microsemi Corporation

TRANS RF BIPO 34W 2.5A M122

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 34W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M122
Supplier Device Package: M122

封裝: M122

庫存4,112

18V

175MHz

-

12dB

34W

20 @ 250mA, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

M122

SD1274

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M135
Supplier Device Package: M135

封裝: M135

庫存4,576

16V

-

10dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Surface Mount

M135

2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: 3-SMD, No Lead

庫存6,768

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

AT-32011-TR1G

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存144,756

5.5V

-

1dB ~ 1.3dB @ 900MHz

12.5dB ~ 14dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

15GN03MA-TL-E

ON Semiconductor

TRANS NPN BIPO 70MA 10V MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

封裝: SC-70, SOT-323

庫存5,648

10V

1.5GHz

1.6dB @ 0.4GHz

13dB @ 0.4GHz

400mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

BFP840FESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP

封裝: SC-82A, SOT-343

庫存2,224

2.6V

85GHz

0.75dB @ 5.5GHz

35dB

75mW

150 @ 10mA, 1.8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

4-TSFP

2N5770

Central Semiconductor Corp

TRANS RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存6,128,100

15V

900MHz

6dB @ 60MHz

-

625mW

50 @ 8mA, 1V

50mA

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BFP640E6327BTSA1

Infineon Technologies

TRANSISTOR NPN SIGE RF SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存3,424

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

24dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFU668F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

封裝: SOT-343F

庫存4,304

-

Surface Mount

SOT-343F

BFR193WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 80MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存96,564

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

SRF4116

MACOM Technology Solutions

TRANSISTOR,1025-1150MHZ,50V,350P

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MS1001A

Microsemi Corporation

TRANS RF BIPO 270W 20A

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NTE64

NTE Electronics, Inc

RF TRANS NPN 15V 4.5GHZ 4SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 12dB
Power - Max: 375mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Lead
Supplier Device Package: 4-SMD

封裝: -

Request a Quote

15V

4.5GHz

2dB @ 1GHz

12dB

375mW

30 @ 5mA, 5V

30mA

-

Surface Mount

4-SMD, Flat Lead

4-SMD

CP302-MPSH10-WN

Central Semiconductor Corp

RF TRANS NPNUHF/VHF

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die

CMPTH10-BK

Central Semiconductor Corp

RF TRANS NPNUHF/VHF SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23