頁 5 - 電晶體 - 雙極 (BJT) - 陣列 | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - 陣列

記錄 2,013
頁  5/72
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2N2920
Central Semiconductor Corp

TRANS 2NPN 30MA 60V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 2nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
封裝: TO-78-6 Metal Can
庫存3,616
30mA
60V
350mV @ 100µA, 1mA
2nA
300 @ 1mA, 5V
1.5W
60MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
hot 2N2919
Central Semiconductor Corp

TRANS 2NPN 30MA 60V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
封裝: TO-78-6 Metal Can
庫存7,980
30mA
60V
-
-
60 @ 10µA, 5V
600mW
60MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
BC846BS/ZLF
Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88-6
封裝: 6-TSSOP, SC-88, SOT-363
庫存5,712
-
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88-6
JANTXV2N3811U
Microsemi Corporation

TRANS 2PNP 60V 0.05A

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
封裝: TO-78-6 Metal Can
庫存2,032
50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
E-ULQ2003D1
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存7,904
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
XN0653400L
Panasonic Electronic Components

TRANS 2NPN 20V 0.015A MINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 15mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 650MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: MINI6-G1
封裝: SOT-23-6
庫存5,216
15mA
20V
-
-
40 @ 1mA, 6V
200mW
650MHz
150°C (TJ)
Surface Mount
SOT-23-6
MINI6-G1
DME20C010R
Panasonic Electronic Components

TRANS NPN/PNP DARL 50V MINI5

  • Transistor Type: NPN, PNP Complementary Darlington
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G3-B
封裝: SC-74A, SOT-753
庫存3,248
100mA
50V
300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
300mW
150MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
Mini5-G3-B
NST3906DXV6T1G
ON Semiconductor

TRANS 2PNP 40V 0.2A SOT563

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封裝: SOT-563, SOT-666
庫存6,416
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot MC1413PG
ON Semiconductor

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
封裝: 16-DIP (0.300", 7.62mm)
庫存19,488
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
UP04501G0L
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SSMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F2
封裝: SOT-563, SOT-666
庫存6,768
100mA
50V
300mV @ 10mA, 100mA
100µA
180 @ 2mA, 10V
125mW
150MHz
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMini6-F2
hot BC847CDW1T1G
ON Semiconductor

TRANS 2NPN 45V 0.1A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存72,000
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
380mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
DST3946DPJ-7
Diodes Incorporated

TRANS NPN/PNP 40V 0.2A SOT963

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封裝: SOT-963
庫存814,464
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
hot DMMT3906W-7-F
Diodes Incorporated

TRANS 2PNP 40V 0.2A SOT363

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存99,636
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
200mW
250MHz
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SMBT5551-TP
Micro Commercial Co

Interface

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
封裝: -
Request a Quote
600mA
160V
200mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 5V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
BC856BS-TPQ2
Micro Commercial Co

Interface

  • Transistor Type: 2 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: -
Request a Quote
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
JANHCA2N3810
Microchip Technology

TRANSISTOR SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
封裝: -
Request a Quote
30mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N5795AU-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
封裝: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Surface Mount
6-SMD, No Lead
U
DMMT3904HE3-TP
Micro Commercial Co

DUAL NPN SMALL SIGNAL TRANSISTOR

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: -
庫存18,000
200mA
40V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
200mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SG2821L-883B
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 95V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-CLCC
  • Supplier Device Package: 20-CLCC (8.89x8.89)
封裝: -
Request a Quote
500mA
95V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
-55°C ~ 125°C (TA)
Surface Mount
20-CLCC
20-CLCC (8.89x8.89)
BC848CDXV6T1
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封裝: -
Request a Quote
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
UPA2001C-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: -30°C ~ 75°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封裝: -
Request a Quote
500mA
60V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
900mW
-
-30°C ~ 75°C
Through Hole
16-DIP (0.300", 7.62mm)
16-DIP
LB1710-E
onsemi

OTHERS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SCH2102-TL-E
onsemi

BIP PNP+PNP 0.5A 12V

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 400mW
  • Frequency - Transition: 490MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-SCH
封裝: -
Request a Quote
500mA
12V
300mV @ 10mA, 200mA
100nA (ICBO)
300 @ 10mA, 2V
400mW
490MHz
-
Surface Mount
6-SMD, Flat Leads
6-SCH
SMBT2907A-TP
Micro Commercial Co

Interface

  • Transistor Type: 2 PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 700mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
封裝: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
700mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
ULQ2003IDRG4SV
Texas Instruments

DARLINGTON TRANSISTOR ARRAY

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MMDT3904-7-F-79
Diodes Incorporated

IC TRANSISTOR ARRAY SMD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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BCM56DSX
Nexperia USA Inc.

TRANS 2NPN 80V 1A 6TSOP

  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 155MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
封裝: -
庫存3,405
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
500mW
155MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
JANTX2N5794U-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
封裝: -
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600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U