頁 47 - 電晶體 - 雙極 (BJT) - 陣列、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
EMF5XV6T5	ON Semiconductor	TRANS NPN PREBIAS/PNP 0.5W SOT56 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存3,552	100mA, 500mA	50V, 12V	47k	47k	80 @ 5mA, 10V / 270 @ 10mA, 2V	250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
XP0431600L	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SMINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	封裝: 6-TSSOP, SC-88, SOT-363	庫存6,240	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
DCX114EH-7	Diodes Incorporated	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存36,000	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBA143EDP6T5G	ON Semiconductor	TRANS 2PNP PREBIAS 0.408W SOT963 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: SOT-963	庫存5,808	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
NSBC115TDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.339W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 339mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: SOT-963	庫存5,424	100mA	50V	100k	-	160 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	339mW	Surface Mount	SOT-963	SOT-963
DCX123JK-7-F	Diodes Incorporated	TRANS NPN/PNP PREBIAS 0.3W SC74R Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74R Supplier Device Package: SC-74R	封裝: SC-74R	庫存3,360	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	300mW	Surface Mount	SC-74R	SC-74R
PEMH24,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W SOT666 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封裝: SOT-563, SOT-666	庫存4,848	100mA	50V	100k	100k	80 @ 5mA, 5V	150mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
XN0111000L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP MINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	封裝: SC-74A, SOT-753	庫存6,224	100mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Surface Mount	SC-74A, SOT-753	Mini5-G1
UMA3NTR	Rohm Semiconductor	TRANS PREBIAS DUAL PNP UMT5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存2,016,000	100mA	50V	4.7k	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	UMT5
DMA9640M0R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SSMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	封裝: SOT-563, SOT-666	庫存3,072	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
DDA114TU-7	Diodes Incorporated	TRANS 2PNP PREBIAS 0.2W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,696	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	-	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PBLS4005D,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 0.6W 6TSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 700mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 300 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 150MHz Power - Max: 600mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封裝: SC-74, SOT-457	庫存28,998	100mA, 700mA	50V, 40V	47k	47k	80 @ 5mA, 5V / 300 @ 100mA, 5V	150mV @ 500µA, 10mA / 310mV @ 100mA, 1A	1µA, 100nA	150MHz	600mW	Surface Mount	SC-74, SOT-457	6-TSOP
MUN5114DW1T1G	ON Semiconductor	TRANS 2PNP PREBIAS 0.25W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存28,608	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
DMC564010R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	封裝: 6-SMD, Flat Leads	庫存26,910	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
EMH2T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存1,305,132	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
RN4910,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存111,510	100mA	50V	4.7k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1910FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存27,756	100mA	50V	4.7k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
MUN5230DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存612,000	100mA	50V	1k	1k	3 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NHUMD13F	Nexperia USA Inc.	TRANS PREBIAS 1NPN 1PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 170MHz, 150MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	庫存42,000	100mA	80V	4.7kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	170MHz, 150MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMD9-ZLZ	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	10kOhms	47kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	230MHz, 180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMH11-ZLF	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN1706JE-TE85L-F	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ESV Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封裝: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-553	ESV
RN4907FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存24,000	100mA	50V	10kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
DCX123JUQ-7-F	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 3K Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
UMB9NHE3-TP	Micro Commercial Co	MOSFET Transistor Type: 2 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	100mA	50V	10kOhms	-	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
UMD3NHE3-TP	Micro Commercial Co	MOSFET Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	50mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN2906-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存8,700	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN2908FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存18,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6

EMF5XV6T5

ON Semiconductor

TRANS NPN PREBIAS/PNP 0.5W SOT56

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存3,552

100mA, 500mA

50V, 12V

47k

80 @ 5mA, 10V / 270 @ 10mA, 2V

250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

XP0431600L

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SMINI6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

封裝: 6-TSSOP, SC-88, SOT-363

庫存6,240

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz, 80MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

DCX114EH-7

Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存36,000

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSBA143EDP6T5G

ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: SOT-963

庫存5,808

100mA

50V

4.7k

15 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

408mW

Surface Mount

SOT-963

NSBC115TDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: SOT-963

庫存5,424

100mA

50V

100k

-

160 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

339mW

Surface Mount

SOT-963

DCX123JK-7-F

Diodes Incorporated

TRANS NPN/PNP PREBIAS 0.3W SC74R

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74R
Supplier Device Package: SC-74R

封裝: SC-74R

庫存3,360

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

300mW

Surface Mount

SC-74R

PEMH24,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封裝: SOT-563, SOT-666

庫存4,848

100mA

50V

100k

80 @ 5mA, 5V

150mV @ 250µA, 5mA

1µA

-

300mW

Surface Mount

SOT-563, SOT-666

SOT-666

XN0111000L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1

封裝: SC-74A, SOT-753

庫存6,224

100mA

50V

47k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Surface Mount

SC-74A, SOT-753

Mini5-G1

UMA3NTR

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: UMT5

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存2,016,000

100mA

50V

4.7k

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

UMT5

DMA9640M0R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SSMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

封裝: SOT-563, SOT-666

庫存3,072

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

DDA114TU-7

Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,696

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 100µA, 1mA

-

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PBLS4005D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 300 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 150MHz
Power - Max: 600mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封裝: SC-74, SOT-457

庫存28,998

100mA, 700mA

50V, 40V

47k

80 @ 5mA, 5V / 300 @ 100mA, 5V

150mV @ 500µA, 10mA / 310mV @ 100mA, 1A

1µA, 100nA

150MHz

600mW

Surface Mount

SC-74, SOT-457

6-TSOP

MUN5114DW1T1G

ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT363

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存28,608

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

DMC564010R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

封裝: 6-SMD, Flat Leads

庫存26,910

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

EMH2T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存1,305,132

100mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

RN4910,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存111,510

100mA

50V

4.7k

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1910FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存27,756

100mA

50V

4.7k

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

MUN5230DW1T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存612,000

100mA

50V

1k

3 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NHUMD13F

Nexperia USA Inc.

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 170MHz, 150MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

庫存42,000

100mA

80V

4.7kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

170MHz, 150MHz

350mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PUMD9-ZLZ

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

Request a Quote

100mA

50V

10kOhms

47kOhms

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

230MHz, 180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PUMH11-ZLF

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

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100mA

50V

10kOhms

30 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

230MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN1706JE-TE85L-F

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封裝: -

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100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-553

ESV

RN4907FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存24,000

100mA

50V

10kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

DCX123JUQ-7-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 3K

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

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100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

UMB9NHE3-TP

Micro Commercial Co

MOSFET

Transistor Type: 2 PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

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100mA

50V

10kOhms

-

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

UMD3NHE3-TP

Micro Commercial Co

MOSFET

Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

50mA

50V

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RN2906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存8,700

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN2908FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存18,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6