頁 28 - 電晶體 - 雙極 (BJT) - 陣列、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR08PNE6327BTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存6,240	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	170MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
XP0411100L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,088	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
BCR08PNH6433XTMA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存3,168	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	170MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
EMF18XV6T5G	ON Semiconductor	TRANS NPN PREBIAS/PNP SOT563 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存2,672	100mA	50V, 60V	47k	47k	80 @ 5mA, 10V / 120 @ 1mA, 6V	250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA	500nA	140MHz	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSVMUN5135DW1T1G	ON Semiconductor	TRANS 2PNP PREBIAS 50V SOT363-6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,808	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PUMB19,115	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,968	100mA	50V	22k	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MUN5133DW1T1G	ON Semiconductor	TRANS 2PNP PREBIAS 0.25W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,200	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
MUN5316DW1T1G	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存1,296,000	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
RN2906FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存4,496	100mA	50V	4.7k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
EMH1T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存412,800	100mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMB11NTN	Rohm Semiconductor	TRANS PREBIAS DUAL PNP UMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: 6-TSSOP, SC-88, SOT-363	庫存1,027,332	100mA	50V	10k	10k	20 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
SMUN5211DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.187W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 187mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,056	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	187mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
XP0331200L	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SMini5-G1	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存196,164	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SMini5-G1
PUMH16,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存26,100	100mA	50V	22k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
DMC566040R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	封裝: 6-SMD, Flat Leads	庫存28,212	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
PUMB9-ZLH	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	10kOhms	47kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
UMD10NHE3-TP	Micro Commercial Co	MOSFET Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	100mA	50V	2.2kOhms	-	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN4988FE-LF-CT	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR22KOHM Q1BER4 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存12,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
NSVEMD4DXV6T1G	onsemi	TRANS NPN/PNP DUAL BRT SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 357mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	357mW	Surface Mount	SOT-563, SOT-666	SOT-563
ACX115EUQ-13R	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 10 Transistor Type: NPN, PNP Complementary Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100kOhms Resistor - Emitter Base (R2) (Ohms): 100kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 270mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	100mA	50V	100kOhms	100kOhms	82 @ 5mA, 5V	-	-	250MHz	270mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PUMH1-ZLX	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PUMH15-QX	Nexperia USA Inc.	PUMH15-Q/SOT363/SC-88 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA , 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	150mV @ 500µA , 10mA	1µA	230MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMB2-QX	Nexperia USA Inc.	PUMB2-Q/SOT363/SC-88 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	180MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN1708-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封裝: -	庫存8,259	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
NSBC124EPDXV6T5	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 256mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	100mA	50V	22kOhms	22kOhms	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	256mW	Surface Mount	SOT-563, SOT-666	SOT-563
MUN5335DW1T2	onsemi	TRANS BRT NPN/PNP 50V SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: -	Request a Quote	100mA	50V	2.2kOhms	47kOhms	80 @ 5mA, 10V	-	-	-	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PUMD6HX	Nexperia USA Inc.	PUMD6HX Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz, 180MHz Power - Max: 240mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	4.7kOhms	-	200 @ 1mA, 5V	100mV @ 500µA, 10mA	100nA	230MHz, 180MHz	240mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMB18T2R	Rohm Semiconductor	TRANS DIGITAL BJT PNP 50V 100MA Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	50V	22kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6

BCR08PNE6327BTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存6,240

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

-

170MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

XP0411100L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,088

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

BCR08PNH6433XTMA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存3,168

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

-

170MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

EMF18XV6T5G

ON Semiconductor

TRANS NPN PREBIAS/PNP SOT563

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存2,672

100mA

50V, 60V

47k

80 @ 5mA, 10V / 120 @ 1mA, 6V

250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA

500nA

140MHz

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSVMUN5135DW1T1G

ON Semiconductor

TRANS 2PNP PREBIAS 50V SOT363-6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,808

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PUMB19,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,968

100mA

50V

22k

-

100 @ 1mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

MUN5133DW1T1G

ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT363

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,200

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

MUN5316DW1T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存1,296,000

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

RN2906FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存4,496

100mA

50V

4.7k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

EMH1T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存412,800

100mA

50V

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMB11NTN

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: 6-TSSOP, SC-88, SOT-363

庫存1,027,332

100mA

50V

10k

20 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

SMUN5211DW1T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 187mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,056

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

187mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

XP0331200L

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SMINI5

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存196,164

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz, 80MHz

150mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SMini5-G1

PUMH16,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存26,100

100mA

50V

22k

47k

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

DMC566040R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

封裝: 6-SMD, Flat Leads

庫存28,212

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

PUMB9-ZLH

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

Request a Quote

100mA

50V

10kOhms

47kOhms

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

UMD10NHE3-TP

Micro Commercial Co

MOSFET

Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

100mA

50V

2.2kOhms

-

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RN4988FE-LF-CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR22KOHM Q1BER4

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存12,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

NSVEMD4DXV6T1G

onsemi

TRANS NPN/PNP DUAL BRT SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 357mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

Request a Quote

100mA

50V

47kOhms

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

357mW

Surface Mount

SOT-563, SOT-666

SOT-563

ACX115EUQ-13R

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

Transistor Type: NPN, PNP Complementary
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100kOhms
Resistor - Emitter Base (R2) (Ohms): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 270mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

100mA

50V

100kOhms

82 @ 5mA, 5V

-

250MHz

270mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PUMH1-ZLX

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

PUMH15-QX

Nexperia USA Inc.

PUMH15-Q/SOT363/SC-88

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA , 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

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100mA

50V

4.7kOhms

30 @ 10mA, 5V

150mV @ 500µA , 10mA

1µA

230MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PUMB2-QX

Nexperia USA Inc.

PUMB2-Q/SOT363/SC-88

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

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100mA

50V

47kOhms

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

180MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN1708-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封裝: -

庫存8,259

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

NSBC124EPDXV6T5

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 256mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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100mA

50V

22kOhms

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

256mW

Surface Mount

SOT-563, SOT-666

SOT-563

MUN5335DW1T2

onsemi

TRANS BRT NPN/PNP 50V SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: -

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100mA

50V

2.2kOhms

47kOhms

80 @ 5mA, 10V

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PUMD6HX

Nexperia USA Inc.

PUMD6HX

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 240mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

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100mA

50V

4.7kOhms

-

200 @ 1mA, 5V

100mV @ 500µA, 10mA

100nA

230MHz, 180MHz

240mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

EMB18T2R

Rohm Semiconductor

TRANS DIGITAL BJT PNP 50V 100MA

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

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100mA

50V

22kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6