頁 22 - 電晶體 - 雙極 (BJT) - 陣列、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR183SH6433XTMA1	Infineon Technologies	TRANS 2PNP PREBIAS 0.25W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存4,848	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	-	200MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
NSBC123JDXV6T1	ON Semiconductor	TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存16,608	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBA143ZDXV6T1	ON Semiconductor	TRANS 2PNP PREBIAS 0.5W SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存4,064	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
DDC123JU-7	Diodes Incorporated	TRANS 2NPN PREBIAS 0.2W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存6,736	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BCR22PNH6433XTMA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存3,248	100mA	50V	22k	22k	50 @ 5mA, 5V	300mV @ 500µA, 10mA	-	130MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
NSVBA114YDXV6T1G	ON Semiconductor	TRANS 2PNP PREBIAS 0.5W SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存6,832	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
EMB9T2R	Rohm Semiconductor	TRANS 2PNP PREBIAS 0.15W EMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存1,975,488	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
PEMB24,115	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W SOT666 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封裝: SOT-563, SOT-666	庫存6,080	20mA	50V	100k	100k	80 @ 5mA, 5V	150mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PEMH16,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W SOT666 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封裝: SOT-563, SOT-666	庫存5,360	100mA	50V	22k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
NSVMUN5212DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,824	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PUMB1,135	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存2,720	100mA	50V	22k	22k	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMH9T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存319,176	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
PUMD9,115	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,440	100mA	50V	10k	47k	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMD9T2R	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.15W EMT6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存521,040	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
FMG3AT148	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.3W SMT5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMT5	封裝: SC-74A, SOT-753	庫存36,000	100mA	50V	4.7k	-	100 @ 1mA, 5V	150mV @ 250µA, 5mA	500nA (ICBO)	250MHz	300mW	Surface Mount	SC-74A, SOT-753	SMT5
PUMF11,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 6TSSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 100MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存22,290	100mA	50V, 40V	22k	47k	80 @ 5mA, 5V / 120 @ 1mA, 6V	150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA	1µA	100MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
IMH9AT110	Rohm Semiconductor	TRANS PREBIAS DUAL NPN SMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	封裝: SC-74, SOT-457	庫存14,664	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	300mW	Surface Mount	SC-74, SOT-457	SMT6
UMB10NTN	Rohm Semiconductor	TRANS PREBIAS DUAL PNP UMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,603,368	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
DMC264040R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN MINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封裝: SOT-23-6	庫存21,918	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
DDC124EU-7-F	Diodes Incorporated	TRANS 2NPN PREBIAS 0.2W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存180,000	100mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN2909FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存24,000	100mA	50V	47kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
PUMD12-ZLX	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz, 180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
NHUMB11X	Nexperia USA Inc.	TRANS PREBIAS 2PNP 80V 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	庫存54,000	100mA	80V	10kOhms	10kOhms	50 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	150MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
NHUMH10F	Nexperia USA Inc.	TRANS PREBIAS 1NPN 1PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 170MHz, 150MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	80V	2.2kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	170MHz, 150MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMB11-ZLX	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN4984FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存22,980	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN2905-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存8,910	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1903-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存9,000	100mA	50V	22kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6

BCR183SH6433XTMA1

Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存4,848

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

-

200MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

NSBC123JDXV6T1

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存16,608

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSBA143ZDXV6T1

ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存4,064

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

DDC123JU-7

Diodes Incorporated

TRANS 2NPN PREBIAS 0.2W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存6,736

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BCR22PNH6433XTMA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 130MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存3,248

100mA

50V

22k

50 @ 5mA, 5V

300mV @ 500µA, 10mA

-

130MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

NSVBA114YDXV6T1G

ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存6,832

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

EMB9T2R

Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存1,975,488

100mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

PEMB24,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封裝: SOT-563, SOT-666

庫存6,080

20mA

50V

100k

80 @ 5mA, 5V

150mV @ 250µA, 5mA

1µA

-

300mW

Surface Mount

SOT-563, SOT-666

SOT-666

PEMH16,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封裝: SOT-563, SOT-666

庫存5,360

100mA

50V

22k

47k

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

SOT-563, SOT-666

SOT-666

NSVMUN5212DW1T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,824

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PUMB1,135

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存2,720

100mA

50V

22k

60 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

EMH9T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存319,176

100mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

PUMD9,115

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,440

100mA

50V

10k

47k

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

EMD9T2R

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存521,040

100mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

FMG3AT148

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMT5

封裝: SC-74A, SOT-753

庫存36,000

100mA

50V

4.7k

-

100 @ 1mA, 5V

150mV @ 250µA, 5mA

500nA (ICBO)

250MHz

300mW

Surface Mount

SC-74A, SOT-753

SMT5

PUMF11,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 100MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存22,290

100mA

50V, 40V

22k

47k

80 @ 5mA, 5V / 120 @ 1mA, 6V

150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA

1µA

100MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

IMH9AT110

Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

封裝: SC-74, SOT-457

庫存14,664

100mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

300mW

Surface Mount

SC-74, SOT-457

SMT6

UMB10NTN

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,603,368

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

DMC264040R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封裝: SOT-23-6

庫存21,918

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

DDC124EU-7-F

Diodes Incorporated

TRANS 2NPN PREBIAS 0.2W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存180,000

100mA

50V

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RN2909FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存24,000

100mA

50V

47kOhms

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

PUMD12-ZLX

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

Request a Quote

100mA

50V

47kOhms

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

230MHz, 180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

NHUMB11X

Nexperia USA Inc.

TRANS PREBIAS 2PNP 80V 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 150MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

庫存54,000

100mA

80V

10kOhms

50 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

150MHz

350mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

NHUMH10F

Nexperia USA Inc.

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 170MHz, 150MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

Request a Quote

100mA

80V

2.2kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

170MHz, 150MHz

350mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PUMB11-ZLX

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

Request a Quote

100mA

50V

10kOhms

30 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN4984FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存22,980

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN2905-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存8,910

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1903-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存9,000

100mA

50V

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6