頁 10 - 電晶體 - 雙極 (BJT) - 陣列、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
EMG2DXV5T1	ON Semiconductor	TRANS 2NPN PREBIAS 0.23W SOT553 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	封裝: SOT-553	庫存5,088	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	SOT-553	SOT-553
NSBC124EDXV6T1	ON Semiconductor	TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存4,528	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBC143EPDXV6T1	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存2,496	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NP0G3A300A	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSSMINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SSSMini6-F1	封裝: SOT-963	庫存5,184	80mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	125mW	Surface Mount	SOT-963	SSSMini6-F1
XN0121200L	Panasonic Electronic Components	TRANS 2NPN PREBIAS 0.3W MINI5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	封裝: SC-74A, SOT-753	庫存3,440	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Surface Mount	SC-74A, SOT-753	Mini5-G1
XN0111100L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP MINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	封裝: SC-74A, SOT-753	庫存7,280	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Surface Mount	SC-74A, SOT-753	Mini5-G1
NSVEMC2DXV5T1G	ON Semiconductor	TRANS NPN/PNP 50V BIPOLAR SOT553 Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	封裝: SOT-553	庫存4,144	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-553	SOT-553
NSBA124EDP6T5G	ON Semiconductor	TRANS 2PNP PREBIAS 0.408W SOT963 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: SOT-963	庫存5,216	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
NSBA144WDP6T5G	ON Semiconductor	TRANS 2PNP PREBIAS 0.408W SOT963 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: SOT-963	庫存2,512	100mA	50V	47k	22k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
EMH4T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存564,360	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
NSVMUN5211DW1T3G	ON Semiconductor	TRANS 2NPN PREBIAS 50V SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,848	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
DMC5610L0R	Panasonic Electronic Components	TRANS 2NPN PREBIAS 0.15W SMINI5 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	封裝: 5-SMD, Flat Leads	庫存2,288	100mA	50V	4.7k	4.7k	20 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
DDA144EK-7-F	Diodes Incorporated	TRANS PREBIAS DUAL PNP SOT26 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封裝: SOT-23-6	庫存36,000	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	300mW	Surface Mount	SOT-23-6	SOT-26
NSBC114EDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.408W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: SOT-963	庫存5,664	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
XP0421200L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	封裝: 6-TSSOP, SC-88, SOT-363	庫存7,648	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
PBLS2003D,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 0.6W 6TSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 185MHz Power - Max: 600mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封裝: SC-74, SOT-457	庫存5,760	100mA, 1A	50V, 20V	10k	10k	30 @ 5mA, 5V / 220 @ 500mA, 2V	150mV @ 500µA, 10mA / 280mV @ 100mA, 1A	1µA, 100nA	185MHz	600mW	Surface Mount	SC-74, SOT-457	6-TSOP
DMG9640M0R	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	封裝: SOT-563, SOT-666	庫存81,120	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
DMA561070R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	封裝: 5-SMD, Flat Leads	庫存5,584	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
RN1964FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存28,230	100mA	50V	47k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
DDA144EH-7	Diodes Incorporated	TRANS PREBIAS DUAL PNP SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存25,950	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
RN1510(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SMV Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存25,866	100mA	50V	4.7k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	300mW	Surface Mount	SC-74A, SOT-753	SMV
UMD15NHE3-TP	Micro Commercial Co	MOSFET Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V / 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	100mA	50V	4.7kOhms	4.7kOhms	20 @ 10mA, 5V / 30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EMH10FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存141	100mA	-	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
RN2905FE-LF-CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	Request a Quote	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1901-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存7,875	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
EMF23XV6T5	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 120 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 500pA (ICBO) Frequency - Transition: 140MHz Power - Max: 357mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	100mA	50V, 60V	10kOhms	10kOhms	35 @ 5mA, 10V / 120 @ 1mA, 6V	250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA	500nA, 500pA (ICBO)	140MHz	357mW	Surface Mount	SOT-563, SOT-666	SOT-563
PUMH17F	Nexperia USA Inc.	TRANS PREBIAS SOT363/SC88 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	庫存30,000	100mA	50V	47kOhms	22kOhms	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMD52T2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存24,000	100mA	50V	22kOhms	22kOhms	60 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6

EMG2DXV5T1

ON Semiconductor

TRANS 2NPN PREBIAS 0.23W SOT553

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: SOT-553

封裝: SOT-553

庫存5,088

100mA

50V

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

230mW

Surface Mount

SOT-553

NSBC124EDXV6T1

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存4,528

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSBC143EPDXV6T1

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存2,496

100mA

50V

4.7k

15 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

NP0G3A300A

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSSMINI6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1

封裝: SOT-963

庫存5,184

80mA

50V

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz, 80MHz

125mW

Surface Mount

SOT-963

SSSMini6-F1

XN0121200L

Panasonic Electronic Components

TRANS 2NPN PREBIAS 0.3W MINI5

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1

封裝: SC-74A, SOT-753

庫存3,440

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Surface Mount

SC-74A, SOT-753

Mini5-G1

XN0111100L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1

封裝: SC-74A, SOT-753

庫存7,280

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Surface Mount

SC-74A, SOT-753

Mini5-G1

NSVEMC2DXV5T1G

ON Semiconductor

TRANS NPN/PNP 50V BIPOLAR SOT553

Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: SOT-553

封裝: SOT-553

庫存4,144

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-553

NSBA124EDP6T5G

ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: SOT-963

庫存5,216

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

408mW

Surface Mount

SOT-963

NSBA144WDP6T5G

ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: SOT-963

庫存2,512

100mA

50V

47k

22k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

408mW

Surface Mount

SOT-963

EMH4T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存564,360

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

NSVMUN5211DW1T3G

ON Semiconductor

TRANS 2NPN PREBIAS 50V SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,848

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

DMC5610L0R

Panasonic Electronic Components

TRANS 2NPN PREBIAS 0.15W SMINI5

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

封裝: 5-SMD, Flat Leads

庫存2,288

100mA

50V

4.7k

20 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

DDA144EK-7-F

Diodes Incorporated

TRANS PREBIAS DUAL PNP SOT26

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封裝: SOT-23-6

庫存36,000

100mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

300mW

Surface Mount

SOT-23-6

SOT-26

NSBC114EDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.408W SOT963

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: SOT-963

庫存5,664

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

408mW

Surface Mount

SOT-963

XP0421200L

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

封裝: 6-TSSOP, SC-88, SOT-363

庫存7,648

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

PBLS2003D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 185MHz
Power - Max: 600mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封裝: SC-74, SOT-457

庫存5,760

100mA, 1A

50V, 20V

10k

30 @ 5mA, 5V / 220 @ 500mA, 2V

150mV @ 500µA, 10mA / 280mV @ 100mA, 1A

1µA, 100nA

185MHz

600mW

Surface Mount

SC-74, SOT-457

6-TSOP

DMG9640M0R

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

封裝: SOT-563, SOT-666

庫存81,120

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

DMA561070R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

封裝: 5-SMD, Flat Leads

庫存5,584

100mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

RN1964FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存28,230

100mA

50V

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

DDA144EH-7

Diodes Incorporated

TRANS PREBIAS DUAL PNP SOT563

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存25,950

100mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

SOT-563

RN1510(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存25,866

100mA

50V

4.7k

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

300mW

Surface Mount

SC-74A, SOT-753

SMV

UMD15NHE3-TP

Micro Commercial Co

MOSFET

Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V / 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

100mA

50V

4.7kOhms

20 @ 10mA, 5V / 30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

EMH10FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存141

100mA

-

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

RN2905FE-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

Request a Quote

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存7,875

100mA

50V

4.7kOhms

30 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

EMF23XV6T5

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 500pA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 357mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

Request a Quote

100mA

50V, 60V

10kOhms

35 @ 5mA, 10V / 120 @ 1mA, 6V

250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA

500nA, 500pA (ICBO)

140MHz

357mW

Surface Mount

SOT-563, SOT-666

SOT-563

PUMH17F

Nexperia USA Inc.

TRANS PREBIAS SOT363/SC88

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

庫存30,000

100mA

50V

47kOhms

22kOhms

60 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

EMD52T2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存24,000

100mA

50V

22kOhms

60 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6