頁 895 - 二極體 - 整流器 - 單 | 離散半導體產品 | 黑森爾電子
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二極體 - 整流器 - 單

記錄 52,788
頁  895/1,886
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製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JAN1N4458R
Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-203AA, DO-4, Stud
庫存3,312
800V
15A
1.5V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
EGP20B-TP
Micro Commercial Co

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-204AC, DO-15, Axial
庫存3,072
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
hot 80EPF04
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-247-3
庫存15,636
400V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-65°C ~ 175°C
R6202440XXOO
Powerex Inc.

DIODE MODULE 2.4KV 400A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
封裝: DO-200AA, A-PUK
庫存3,312
2400V
400A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
9µs
50mA @ 2400V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
VT2045BP-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 200°C (Max)
封裝: TO-220-2
庫存2,944
45V
20A (DC)
660mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Through Hole
TO-220-2
TO-220AC
200°C (Max)
SRAS8100 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,552
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
PMEG100V100ELPDZ
Nexperia USA Inc.

DIODE SCHOTTKY 100V 10A CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 14ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 135pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: 175°C (Max)
封裝: 3-SMD, Flat Leads
庫存4,624
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
14ns
1µA @ 100V
135pF @ 10V, 1MHz
Surface Mount
3-SMD, Flat Leads
CFP15
175°C (Max)
ES3A R7G
TSC America Inc.

DIODE, SUPER FAST, 3A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存4,272
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
B350A-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 50V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存4,368
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RGP10G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存4,816
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
2A05G R0G
TSC America Inc.

DIODE, 2A, 600V, DO-15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-204AC, DO-15, Axial
庫存3,136
600V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
UF4003TA
SMC Diode Solutions

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存7,104
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
VS-1N3893
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 25µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-203AA, DO-4, Stud
庫存6,992
400V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
25µA @ 400V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
JANS1N6621US-TR
Microchip Technology

DIODE GP 400V 1.2A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
400 V
1.2A
1.6 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
-
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 150°C
RFN2VWM2STFTR
Rohm Semiconductor

DIODE GEN PURP 200V 2A PMDE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 175°C
封裝: -
庫存17,991
200 V
2A
990 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 200 V
-
Surface Mount
2-SMD, Flat Lead
PMDE
175°C
1N3292RA
Solid State Inc.

DIODE GEN PURP REV 500V 150A DO8

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
500 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 500 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
RS2J-HF
Comchip Technology

DIODE GEN PURP 600V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存4,398
600 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
22pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CD214B-S3J
Bourns Inc.

DIODE GEN PURP 600V 3A 2SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 23pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
庫存29,487
600 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
23pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2-SMD
-65°C ~ 175°C
JANTX1N6641US-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
50 V
300mA
1.1 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
5 ns
100 nA @ 50 V
-
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
SUR8840G
onsemi

RECTIFIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BAT54Q-13
Diodes Incorporated

DIODE SCHOTT 30V 200MA SOT23 10K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
庫存24,951
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-65°C ~ 150°C
V8PM45HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 8A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 45 V
  • Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存19,008
45 V
8A
600 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 45 V
1450pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
S3G-AQ
Diotec Semiconductor

DIODE SMC 400V 3A 150C AECQ101

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: -
Request a Quote
400 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 400 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
RS2KAH
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存45,000
800 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
NRVBSS34FA
onsemi

DIODE SCHOTTKY 40V 3A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 152pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
庫存14,907
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
500 µA @ 40 V
152pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 125°C
STPS660CSFY
STMicroelectronics

DIODE SCHOTTKY 60V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 19 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存8,913
60 V
3A
610 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
19 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
CMR2U-04-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 400V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
庫存6,255
400 V
2A
1.4 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 400 V
28pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
CGRB205-HF
Comchip Technology

DIODE GEN PURP 600V 2A DO214AA S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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600 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C