頁 862 - 二極體 - 整流器 - 單 | 離散半導體產品 | 黑森爾電子
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二極體 - 整流器 - 單

記錄 52,788
頁  862/1,886
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UMAF5818
Microsemi Corporation

DIODE SCHOTTKY 30V 1A ULTRAMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Ultramite?
  • Supplier Device Package: Ultramite?
  • Operating Temperature - Junction: -50°C ~ 125°C
封裝: Ultramite?
庫存6,416
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
Ultramite?
Ultramite?
-50°C ~ 125°C
VS-70HF100M
Vishay Semiconductor Diodes Division

DIODE STD REC 1000V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 180°C
封裝: DO-203AB, DO-5, Stud
庫存4,368
1000V
70A
1.35V @ 220A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 180°C
VS-40HF140M
Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 160°C
封裝: DO-203AB, DO-5, Stud
庫存6,704
1400V
40A
1.3V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 160°C
ISL9R3060G2_F085
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-247-2
庫存2,016
600V
30A
2.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
SFF2001GHC0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 50V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-220-3 Full Pack, Isolated Tab
庫存5,840
50V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
90pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
MB10H90HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,504
90V
10A
770mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5µA @ 90V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
SS10P5-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-277, 3-PowerDFN
庫存5,968
50V
7A
550mV @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
6A10G B0G
TSC America Inc.

DIODE, 6A, 100V, R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: R6, Axial
庫存5,408
100V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
BYG24JHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A SMA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存7,264
600V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UF4003-M3/54
Vishay Semiconductor Diodes Division

DIODE 1A 200V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存2,064
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S1BHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存7,680
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 100V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CDBER00340-HF
Comchip Technology

DIODE SCHOTTKY 40V 30MA 0503

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0503 (1308 Metric)
  • Supplier Device Package: 0503/SOD-723F
  • Operating Temperature - Junction: 125°C (Max)
封裝: 0503 (1308 Metric)
庫存2,400
40V
30mA
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 40V
1.5pF @ 1V, 1MHz
Surface Mount
0503 (1308 Metric)
0503/SOD-723F
125°C (Max)
BAV5004WS-7
Diodes Incorporated

DIODE GP 350V 300MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 1µA @ 240V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: SC-76, SOD-323
庫存2,224
350V
300mA
1.29V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
1µA @ 240V
2.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
PR1004-T
Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存5,760
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
S15MCHR7G
TSC America Inc.

DIODE, 15A, 1000V, AEC-Q101, DO-

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 93pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存7,120
1000V
15A
1.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 1000V
93pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
BAS101,215
Nexperia USA Inc.

DIODE GEN PURP 300V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 150nA @ 250V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
  • Operating Temperature - Junction: 150°C (Max)
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,936
300V
200mA (DC)
1.1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
150nA @ 250V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
150°C (Max)
PG4936_R2_00001
Panjit International Inc.

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
400 V
1A
1.2 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 400 V
12pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
1N4500-TR
Microchip Technology

DIODE GEN PURP DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
-
-
1.1 V @ 300 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
-
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
60HFR100
Solid State Inc.

DIODE GEN PURP 1KV 60A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
1000 V
60A
1.3 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
200 µA @ 1000 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
S4PGHM3_B-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 4A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
400 V
4A
1.1 V @ 4 A
Standard Recovery >500ns, > 200mA (Io)
2.5 µs
10 µA @ 400 V
30pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
ISL9R860S3ST_NL
Fairchild Semiconductor

DIODE GEN PURP 600V 8A TO263AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
8A
2.4 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
100 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
PSDH3060L1_T0_00001
Panjit International Inc.

DIODE GP 600V 30A TO247AD-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 115 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD-2
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存4,428
600 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
115 ns
250 µA @ 600 V
-
Through Hole
TO-247-2
TO-247AD-2
-55°C ~ 150°C
HERAF807G
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存3,000
800 V
8A
1.7 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 800 V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
EP04RA60
KYOCERA AVX

DIODE GEN PURP 600V 400MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 400 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
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600 V
400mA
1.32 V @ 400 mA
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
10 µA @ 600 V
-
Surface Mount
SOD-123
SOD-123
-40°C ~ 150°C
SKIS300-100
SMC Diode Solutions

100V, 300A, SOT-227, POWER MODUL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 990 mV @ 300 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 mA @ 100 V
  • Capacitance @ Vr, F: 4860pF @ 12V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存6
100 V
300A
990 mV @ 300 A
Fast Recovery =< 500ns, > 200mA (Io)
-
3 mA @ 100 V
4860pF @ 12V, 1MHz
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
-55°C ~ 150°C
FR204GA-G
Comchip Technology

DIODE GEN PURP 400V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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400 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
R2000-AP
Micro Commercial Co

DIODE GEN PURP 2KV 500MA DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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2000 V
500mA
3 V @ 500 mA
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 2000 V
30pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
CMPD3003-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 180V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 180 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 nA @ 180 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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180 V
200mA
1.1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
10 nA @ 180 V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C