二極體 - 整流器 - 單

B540C-13-01-F

Diodes Incorporated

DIODE SCHOTTKY 40V 5A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: 300pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

MBRB10H90HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GPP15G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AC, DO-15, Axial

MA2SE0100L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 35MA SSMINI2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 35mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200nA @ 15V
• Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SSMini2-F1
• Operating Temperature - Junction: 125°C (Max)

封裝: SC-79, SOD-523

1N6076

Microsemi Corporation

DIODE GEN PURP 50V 1.3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 155°C

封裝: A, Axial

MBRF20100HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack

6A08B-G

Comchip Technology

DIODE GEN PURP 800V 6A R6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: R6, Axial

VS-2EJH02HM3/6A

Vishay Semiconductor Diodes Division

DIODE HF 200V 2A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-221AC, SMA Flat Leads

S1D-M3/61T

Vishay Semiconductor Diodes Division

DIODE GPP 1A 200V DO-214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

SD103AX-TP

Micro Commercial Co

DIODE SCHOTTKY 350MA 40V SOD-523

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 350mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 30V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -65°C ~ 125°C

封裝: SC-79, SOD-523

BAT721,215

Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15µA @ 30V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)
• Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

TMBYV10-60FILM

STMicroelectronics

DIODE SCHOTTKY 60V 1A MELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF
• Operating Temperature - Junction: -65°C ~ 125°C

封裝: DO-213AB, MELF

UF102G_R2_00001

Panjit International Inc.

DIODE GEN PURP 200V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

1N4150-TR-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 50V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

JANTXV1N5819UR-1

Microchip Technology

DIODE SCHOTTKY 45V 1A DO213AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 45 V
• Capacitance @ Vr, F: 70pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)
• Operating Temperature - Junction: -65°C ~ 125°C

封裝: -

Request a Quote

SUF4003

Diotec Semiconductor

DIODE GP 200V 1A MELF DO-213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB (Plastic)
• Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

AOGF40D65L1L

Alpha & Omega Semiconductor Inc.

LINEAR IC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 40 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 126 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

SD103BWSL-13P

Micro Commercial Co

SCHOTTKY DIODES

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 350mA
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 20 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323FL
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

Request a Quote

FFSB0665A

onsemi

DIODE SIL CARB 650V 9A D2PAK-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 9A
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 650 V
• Capacitance @ Vr, F: 361pF @ 1V, 100kHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

SS3D-B

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

BYS10-45HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 1.5A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

R32100

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

Request a Quote

JANS1N6661-TR

Microchip Technology

DIODE GEN PURP 225V 500MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 225 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 nA @ 225 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

RS2GAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1.5A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

V8PM63-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 4.3A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 4.3A
• Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 µA @ 60 V
• Capacitance @ Vr, F: 1460pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

SIDC50D60C6X1SA1

Infineon Technologies

DIODE GP 600V 200A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

Request a Quote

1N6305R

Microchip Technology

DIODE GEN PURP 100V 70A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60 ns
• Current - Reverse Leakage @ Vr: 25 µA @ 100 V
• Capacitance @ Vr, F: 600pF @ 10V, 1MHz
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5 (DO-203AB)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

SR206H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 2A DO204AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote