頁 749 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
EGP10FHM3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存6,592	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
ESH3DHE3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-214AB, SMC	庫存7,616	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
GP20J-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存7,632	600V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
R7200806XXOO	Powerex Inc.	DIODE MODULE 800V 600A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存6,256	800V	600A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	7µs	50mA @ 800V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
S12K	GeneSiC Semiconductor	DIODE GEN PURP 800V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-203AA, DO-4, Stud	庫存6,944	800V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
NXPSC10650DJ	WeEn Semiconductors	NXPSC10650DJ DPAK Q1 T1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存6,000	-	-	-	-	-	-	-	-	-	-	-
TSF20H120C-S C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 20A, 12 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 860mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-3 Full Pack, Isolated Tab	庫存2,048	120V	10A	860mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA850 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2	庫存5,840	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
RK 36V	Sanken	DIODE SCHOTTKY 60V 2A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封裝: Axial	庫存4,672	60V	2A	620mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C
BY252P-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存6,624	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CDBA240LR-HF	Comchip Technology	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-214AC, SMA	庫存4,064	40V	2A (DC)	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
SB250TR	SMC Diode Solutions	DIODE SCHOTTKY 50V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 2A Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-204AC, DO-15, Axial	庫存7,232	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 2A	140pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
SE20AFG-M3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-221AC, SMA Flat Leads	庫存60,480	400V	2A (DC)	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
RGF1D-E3/67A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214BA	庫存99,612	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	8.5pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
1N2159	Solid State Inc.	DIODE GEN PURP 500V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	500 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
UFS180GE3-TR13	Microchip Technology	DIODE GEN PURP 800V 1A SMBG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: SMBG (DO-215AA) Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	800 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	20 µA @ 600 V	-	Surface Mount	DO-215AA, SMB Gull Wing	SMBG (DO-215AA)	-55°C ~ 175°C
PX8143HDMG008XTMA1	Infineon Technologies	LED PX8143HDMG008XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK5B	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 5A, 100V, D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存17,700	100 V	5A	790 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	96pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
NRVBA2H100NT3G	onsemi	DIODE SCHOTTKY 100V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	100 V	2A	790 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
MURF8L60	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存2,991	600 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	5 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 175°C
BAS116WS_R1_00001	Panjit International Inc.	DIODE GEN PURP 75V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存67,791	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
JANS1N6638US	Semtech Corporation	DIODE GEN PURP 125V 300MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Current - Reverse Leakage @ Vr: 500 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 125 V	-	Through Hole	Axial	Axial	-65°C ~ 175°C
SK16B	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	60 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RGF1KHE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	8.5pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
V3PM12-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 1.9A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 120 V Capacitance @ Vr, F: 290pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	庫存771	120 V	1.9A	620 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 120 V	290pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
JANTX1N4454-1	Microchip Technology	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	庫存5,160	50 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
FFSP1065A	onsemi	DIODE SIL CARB 650V 15A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 575pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存4,692	650 V	15A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
BAV23A-7-G	Diodes Incorporated	DIODE GEN PURPOSE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

EGP10FHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存6,592

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

ESH3DHE3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-214AB, SMC

庫存7,616

200V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

GP20J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存7,632

600V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 600V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

R7200806XXOO

Powerex Inc.

DIODE MODULE 800V 600A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 50mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存6,256

800V

600A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

7µs

50mA @ 800V

-

Chassis Mount

DO-200AB, B-PUK

-

S12K

GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-203AA, DO-4, Stud

庫存6,944

800V

12A

1.1V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

NXPSC10650DJ

WeEn Semiconductors

NXPSC10650DJ DPAK Q1 T1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存6,000

-

TSF20H120C-S C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 20A, 12

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-3 Full Pack, Isolated Tab

庫存2,048

120V

10A

860mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 120V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SRA850 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

庫存5,840

50V

8A

700mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

RK 36V

Sanken

DIODE SCHOTTKY 60V 2A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Axial

庫存4,672

60V

2A

620mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 60V

-

Through Hole

Axial

-

-40°C ~ 150°C

BY252P-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存6,624

400V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CDBA240LR-HF

Comchip Technology

DIODE SCHOTTKY 40V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-214AC, SMA

庫存4,064

40V

2A (DC)

450mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 150°C

SB250TR

SMC Diode Solutions

DIODE SCHOTTKY 50V 2A DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 2A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AC, DO-15, Axial

庫存7,232

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 2A

140pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

SE20AFG-M3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-221AC, SMA Flat Leads

庫存60,480

400V

2A (DC)

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

RGF1D-E3/67A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214BA

庫存99,612

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

8.5pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

1N2159

Solid State Inc.

DIODE GEN PURP 500V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

500 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

UFS180GE3-TR13

Microchip Technology

DIODE GEN PURP 800V 1A SMBG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: SMBG (DO-215AA)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

800 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

20 µA @ 600 V

-

Surface Mount

DO-215AA, SMB Gull Wing

SMBG (DO-215AA)

-55°C ~ 175°C

PX8143HDMG008XTMA1

Infineon Technologies

LED PX8143HDMG008XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

SK5B

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 5A, 100V, D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存17,700

100 V

5A

790 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

96pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

NRVBA2H100NT3G

onsemi

DIODE SCHOTTKY 100V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

100 V

2A

790 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

8 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

MURF8L60

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存2,991

600 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

65 ns

5 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 175°C

BAS116WS_R1_00001

Panjit International Inc.

DIODE GEN PURP 75V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存67,791

75 V

200mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

5 nA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

JANS1N6638US

Semtech Corporation

DIODE GEN PURP 125V 300MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

125 V

300mA

1.1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

4.5 ns

500 nA @ 125 V

-

Through Hole

Axial

-65°C ~ 175°C

SK16B

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

60 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RGF1KHE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

800 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

8.5pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

V3PM12-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 1.9A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

庫存771

120 V

1.9A

620 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 120 V

290pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

JANTX1N4454-1

Microchip Technology

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

庫存5,160

50 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

FFSP1065A

onsemi

DIODE SIL CARB 650V 15A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存4,692

650 V

15A

1.75 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

575pF @ 1V, 100kHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

BAV23A-7-G

Diodes Incorporated

DIODE GEN PURPOSE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-