頁 717 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CDBA280-G	Comchip Technology	DIODE SCHOTTKY 80V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 125°C (Max)	封裝: DO-214AC, SMA	庫存4,656	80V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	125°C (Max)
FES16DT	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 16A TO220-2L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-220-2	庫存6,816	200V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	170pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
RS2G-13	Diodes Incorporated	DIODE GEN PURP 400V 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AA, SMB	庫存5,312	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
D251N12B	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 100V 400A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存4,992	-	-	-	-	-	-	-	-	-	-	-
R7000604XXUA	Powerex Inc.	DIODE GEN PURP 600V 450A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-200AA, A-PUK	庫存6,832	600V	450A	1.6V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 600V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 175°C
VS-T70HF120	Vishay Semiconductor Diodes Division	DIODE MODULE 200V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	封裝: D-55 T-Module	庫存7,248	200V	70A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 200V	-	Chassis Mount	D-55 T-Module	D-55	-
V12P12-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-277, 3-PowerDFN	庫存4,336	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
UG58GHB0G	TSC America Inc.	DIODE, ULTRA FAST, 5A, 600V, 20N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存5,472	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SL23-E3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AA, SMB	庫存7,712	30V	2A	440mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
UF1GHB0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存6,496	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1JLHRHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-219AB	庫存6,720	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
US1K-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存341,040	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TRS10E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 10A TO220-2L Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	封裝: TO-220-2	庫存7,008	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	-	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
RB531VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 610mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	封裝: SC-90, SOD-323F	庫存4,256	40V	100mA	610mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
S1MSWFQ-7	Diodes Incorporated	DIODE RECT STD 1000V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	封裝: SOD-123F	庫存25,770	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1µs	10µA @ 1000V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
VS-85HF120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	封裝: DO-203AB, DO-5, Stud	庫存7,824	1200V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
PMEG3015EH,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1.5A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 72pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max)	封裝: SOD-123F	庫存812,898	30V	1.5A (DC)	550mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	72pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C (Max)
SDR08C04LP3-7B	Diodes Incorporated	SCHOTTKY DIODE X3-DFN0603-2 T&R Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4 V Current - Average Rectified (Io): 80mA Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.1 ns Current - Reverse Leakage @ Vr: 10 µA @ 1 V Capacitance @ Vr, F: 0.31pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: X3-DFN0603-2 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	4 V	80mA	410 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	1.1 ns	10 µA @ 1 V	0.31pF @ 0V, 1MHz	Surface Mount	0201 (0603 Metric)	X3-DFN0603-2	-55°C ~ 150°C
HSU83-92TRF-E	Renesas Electronics Corporation	DIODE FOR HIGH VOLTAGE SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAV103-7	Diodes Incorporated	DIODE SWITCH 200V 500MW MINIMELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -	封裝: -	Request a Quote	200 V	125mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-
MBR120HW	SMC Diode Solutions	DIODE SCHOTTKY 20V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 20 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	封裝: -	Request a Quote	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	50pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
DSB015-TB-E	onsemi	SWITCH DIODE 0.15A 50V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
ER1A_R1_00001	Panjit International Inc.	DIODE GEN PURP 50V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 50 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
R30680	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	800 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 800 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
US1MHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SE20PABHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	100 V	1.6A	900 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 100 V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
1N6660DT1	Microsemi Corporation	DIODE SCHOTTKY 45V 15A TO254AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	45 V	15A	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	2000pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254AA	-65°C ~ 150°C
HER504GP-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	300 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C

CDBA280-G

Comchip Technology

DIODE SCHOTTKY 80V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 125°C (Max)

封裝: DO-214AC, SMA

庫存4,656

80V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 80V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

125°C (Max)

FES16DT

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 16A TO220-2L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-2

庫存6,816

200V

16A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

170pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

RS2G-13

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AA, SMB

庫存5,312

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

D251N12B

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 100V 400A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存4,992

-

R7000604XXUA

Powerex Inc.

DIODE GEN PURP 600V 450A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 450A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-200AA, A-PUK

庫存6,832

600V

450A

1.6V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 600V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 175°C

VS-T70HF120

Vishay Semiconductor Diodes Division

DIODE MODULE 200V 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

封裝: D-55 T-Module

庫存7,248

200V

70A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 200V

-

Chassis Mount

D-55 T-Module

D-55

-

V12P12-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-277, 3-PowerDFN

庫存4,336

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

UG58GHB0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 600V, 20N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存5,472

600V

5A

2.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

30µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SL23-E3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AA, SMB

庫存7,712

30V

2A

440mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

UF1GHB0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存6,496

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

ES1JLHRHG

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

庫存6,720

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

8pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

US1K-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存341,040

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

TRS10E65C,S1Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 10A TO220-2L

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 90µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

封裝: TO-220-2

庫存7,008

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

90µA @ 650V

-

Through Hole

TO-220-2

TO-220-2L

175°C (Max)

RB531VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 610mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

封裝: SC-90, SOD-323F

庫存4,256

40V

100mA

610mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

S1MSWFQ-7

Diodes Incorporated

DIODE RECT STD 1000V 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123F

庫存25,770

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1µs

10µA @ 1000V

6pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

VS-85HF120

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

庫存7,824

1200V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 1200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 180°C

PMEG3015EH,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1.5A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 72pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)

封裝: SOD-123F

庫存812,898

30V

1.5A (DC)

550mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

72pF @ 1V, 1MHz

Surface Mount

SOD-123F

150°C (Max)

SDR08C04LP3-7B

Diodes Incorporated

SCHOTTKY DIODE X3-DFN0603-2 T&R

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4 V
Current - Average Rectified (Io): 80mA
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.1 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Capacitance @ Vr, F: 0.31pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

4 V

80mA

410 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

1.1 ns

10 µA @ 1 V

0.31pF @ 0V, 1MHz

Surface Mount

0201 (0603 Metric)

X3-DFN0603-2

-55°C ~ 150°C

HSU83-92TRF-E

Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

BAV103-7

Diodes Incorporated

DIODE SWITCH 200V 500MW MINIMELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -

封裝: -

Request a Quote

200 V

125mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

-

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-

MBR120HW

SMC Diode Solutions

DIODE SCHOTTKY 20V 1A SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

封裝: -

Request a Quote

20 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 20 V

50pF @ 4V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

DSB015-TB-E

onsemi

SWITCH DIODE 0.15A 50V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

ER1A_R1_00001

Panjit International Inc.

DIODE GEN PURP 50V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 50 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

R30680

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

800 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 800 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

US1MHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 1000 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SE20PABHM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1.6A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

100 V

1.6A

900 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 100 V

13pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

1N6660DT1

Microsemi Corporation

DIODE SCHOTTKY 45V 15A TO254AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254AA
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

45 V

15A

750 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

2000pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254AA

-65°C ~ 150°C

HER504GP-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

300 V

5A

1.3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 300 V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C