頁 678 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GI250-4-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 4KV 250MA DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 4000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存7,728	4000V	250mA	3.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	2µs	5µA @ 4000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
10MQ040N	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2.1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存76,296	40V	2.1A	540mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
UFT3140C	Microsemi Corporation	DIODE GEN PURP 400V 30A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 15mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	封裝: TO-204AA, TO-3	庫存5,104	400V	30A (DC)	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	15mA @ 400V	-	Chassis Mount	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 175°C
1N6538	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存4,992	-	-	-	-	-	-	-	-	-	-	-
SF41GHA0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存4,688	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK515B M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存6,128	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CD214A-F1200	Bourns Inc.	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存4,096	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC	-55°C ~ 150°C
SK14B M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AA, SMB	庫存3,456	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
RS1KL RHG	TSC America Inc.	DIODE, FAST, 0.8A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-219AB	庫存3,584	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TSP15H150S S1G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 15A, 15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-277, 3-PowerDFN	庫存7,424	150V	15A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SBRT5A50SAF-13	Diodes Incorporated	DIODE SBR 50V 5A SMAFLAT Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 530mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAflat Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-221AC, SMA Flat Leads	庫存3,872	50V	5A	530mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	150µA @ 50V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMAflat	-55°C ~ 150°C
MBR750	Fairchild/ON Semiconductor	DIODE SCHOTTKY 50V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-220-2	庫存16,632	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220-2L	-65°C ~ 150°C
SE30AFJHM3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-221AC, SMA Flat Leads	庫存93,384	600V	3A (DC)	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
TMBAT49FILM	STMicroelectronics	DIODE SCHOTTKY 80V 500MA MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 80V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	封裝: DO-213AB, MELF	庫存21,024	80V	500mA (DC)	420mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 80V	120pF @ 0V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
PMLL4148L,135	Nexperia USA Inc.	DIODE GEN PURP 75V 200MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C Operating Temperature - Junction: 200°C (Max)	封裝: DO-213AC, MINI-MELF, SOD-80	庫存3,088	75V	200mA (DC)	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80C	200°C (Max)
CMOSH-4E-TR-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 40V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 25 V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	庫存346,449	40 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 25 V	7pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
JANTX1N6663US	Microchip Technology	DIODE GP 600V 500MA A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	600 V	500mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C
UFR10270R	Microchip Technology	DIODE GEN PURP 700V 100A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 25 µA @ 700 V Capacitance @ Vr, F: 210pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	700 V	100A	1 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	25 µA @ 700 V	210pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 175°C
GS1508FL_R1_00001	Panjit International Inc.	DIODE GP 800V 1.5A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存16,260	800 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
JANTXV1N3912AR	Microchip Technology	DIODE GEN PURP 300V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	300 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
V20KM120-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 4A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 120 V Capacitance @ Vr, F: 1920pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	封裝: -	Request a Quote	120 V	4A	870 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 120 V	1920pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
JANS1N5551-TR	Microchip Technology	DIODE GEN PURP 400V 5A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	400 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SF63G-TP	Micro Commercial Co	DIODE GEN PURP 150V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	150 V	6A	975 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	120pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CLLR1U-04-TR	Central Semiconductor Corp	DIODE GEN PURP 400V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 175°C
R30420	Microchip Technology	DIODE GEN PURP 200V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
S2M-LTP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	1000 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SF21G-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	50 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	60pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
V30KM45-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 5.2A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5.2A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: 4300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	封裝: -	Request a Quote	45 V	5.2A	610 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	4300pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C

GI250-4-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4KV 250MA DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存7,728

4000V

250mA

3.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

2µs

5µA @ 4000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

10MQ040N

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2.1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存76,296

40V

2.1A

540mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

UFT3140C

Microsemi Corporation

DIODE GEN PURP 400V 30A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 15mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-204AA, TO-3

庫存5,104

400V

30A (DC)

1.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

15mA @ 400V

-

Chassis Mount

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 175°C

1N6538

Microsemi Corporation

DIODE RECT ULT FAST REC A-PKG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存4,992

-

SF41GHA0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存4,688

50V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SK515B M4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存6,128

150V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CD214A-F1200

Bourns Inc.

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存4,096

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC

-55°C ~ 150°C

SK14B M4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AA, SMB

庫存3,456

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

RS1KL RHG

TSC America Inc.

DIODE, FAST, 0.8A, 800V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

庫存3,584

800V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

TSP15H150S S1G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 15A, 15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-277, 3-PowerDFN

庫存7,424

150V

15A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 150V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

SBRT5A50SAF-13

Diodes Incorporated

DIODE SBR 50V 5A SMAFLAT

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAflat
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-221AC, SMA Flat Leads

庫存3,872

50V

5A

530mV @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

150µA @ 50V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMAflat

-55°C ~ 150°C

MBR750

Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-2

庫存16,632

50V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220-2L

-65°C ~ 150°C

SE30AFJHM3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-221AC, SMA Flat Leads

庫存93,384

600V

3A (DC)

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 600V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

TMBAT49FILM

STMicroelectronics

DIODE SCHOTTKY 80V 500MA MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 80V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C

封裝: DO-213AB, MELF

庫存21,024

80V

500mA (DC)

420mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 80V

120pF @ 0V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 125°C

PMLL4148L,135

Nexperia USA Inc.

DIODE GEN PURP 75V 200MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
Operating Temperature - Junction: 200°C (Max)

封裝: DO-213AC, MINI-MELF, SOD-80

庫存3,088

75V

200mA (DC)

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80C

200°C (Max)

CMOSH-4E-TR-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

庫存346,449

40 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

500 nA @ 25 V

7pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

JANTX1N6663US

Microchip Technology

DIODE GP 600V 500MA A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

600 V

500mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 175°C

UFR10270R

Microchip Technology

DIODE GEN PURP 700V 100A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 700 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Reverse Leakage @ Vr: 25 µA @ 700 V
Capacitance @ Vr, F: 210pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

700 V

100A

1 V @ 100 A

Fast Recovery =< 500ns, > 200mA (Io)

120 ns

25 µA @ 700 V

210pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 175°C

GS1508FL_R1_00001

Panjit International Inc.

DIODE GP 800V 1.5A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存16,260

800 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

10pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

JANTXV1N3912AR

Microchip Technology

DIODE GEN PURP 300V 50A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

300 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 150°C

V20KM120-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 4A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Capacitance @ Vr, F: 1920pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

封裝: -

Request a Quote

120 V

4A

870 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 120 V

1920pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

JANS1N5551-TR

Microchip Technology

DIODE GEN PURP 400V 5A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

400 V

5A

1.2 V @ 9 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

-

Through Hole

B, Axial

-65°C ~ 175°C

SF63G-TP

Micro Commercial Co

DIODE GEN PURP 150V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

150 V

6A

975 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 150 V

120pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CLLR1U-04-TR

Central Semiconductor Corp

DIODE GEN PURP 400V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

-

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 175°C

R30420

Microchip Technology

DIODE GEN PURP 200V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

S2M-LTP-HF

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

1000 V

2A

1.15 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SF21G-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

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50 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

60pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

V30KM45-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 5.2A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 5.2A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: 4300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

封裝: -

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45 V

5.2A

610 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

4300pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C