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二極體 - 整流器 - 單

記錄 52,788
頁  51/1,886
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RB160A60T-32
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A MSR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-41 Mini, Axial
  • Supplier Device Package: MSR
  • Operating Temperature - Junction: 150°C (Max)
封裝: DO-41 Mini, Axial
庫存3,008
60V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 60V
-
Through Hole
DO-41 Mini, Axial
MSR
150°C (Max)
RGP10JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存4,480
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
R6100425XXYZ
Powerex Inc.

DIODE GEN PURP 400V 250A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11µs
  • Current - Reverse Leakage @ Vr: 50mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
封裝: DO-205AB, DO-9, Stud
庫存6,448
400V
250A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
11µs
50mA @ 400V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 190°C
8TQ100STRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,648
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
VS-8EWS16STRR-M3
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1600V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,040
1600V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
QH08BZ600
Power Integrations

DIODE SCHOTTKY 600V 8A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.15V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11.1ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 150°C (Max)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,456
600V
8A
3.15V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
11.1ns
250µA @ 600V
25pF @ 10V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
150°C (Max)
NXPSC04650XQ
WeEn Semiconductors

NXPSC04650XQ TO220F-2L STANDARD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存7,760
-
-
-
-
-
-
-
-
-
-
-
SFAF501G C0G
TSC America Inc.

DIODE, SUPER FAST, 5A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-220-2 Full Pack
庫存2,752
50V
5A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
V10PN50-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5.3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5.3A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: TO-277, 3-PowerDFN
庫存7,664
50V
5.3A
550mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
EGF1BHE3/5CA
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-214BA
庫存4,352
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
RS07K-M-18
Vishay Semiconductor Diodes Division

DIODE SW 800V DO219-M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 2µA @ 800V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-219AB
庫存2,112
800V
500mA
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
2µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
EGL34B-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-213AA (Glass)
庫存7,776
100V
500mA
1.25V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
SD1206S020S1R0
AVX Corporation

DIODE SCHOTTKY 20V 1A 1206

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206 (3216 Metric)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: 1206 (3216 Metric)
庫存6,816
20V
1A (DC)
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
1206 (3216 Metric)
1206 (3216 Metric)
-55°C ~ 125°C
SFT11GHR0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: T-18, Axial
庫存5,600
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
1N4003GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存4,480
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 200V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SS110LWHRVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: SOD-123W
庫存2,656
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
hot RSX205L-30TE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A TUMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: TUMD2
  • Operating Temperature - Junction: 150°C (Max)
封裝: DO-214AC, SMA
庫存300,000
30V
2A
490mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
TUMD2
150°C (Max)
hot ES2BA-13-F
Diodes Incorporated

DIODE GEN PURP 100V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存440,256
100V
2A
920mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
ES1DF-T
Taiwan Semiconductor Corporation

35NS, 1A, 200V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存22,500
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
20pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
1N3070-1
Microchip Technology

DIODE GEN PURP 175V 100MA DO7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 175 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
庫存786
175 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
-
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-65°C ~ 175°C
S12GCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存9,000
400 V
12A
1.1 V @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
GV804B_R2_00001
Panjit International Inc.

DIODE GEN PURP 400V 8A TO277B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存17,271
400 V
8A
1.1 V @ 8 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
55pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
BAS16T116
Rohm Semiconductor

DIODE GEN PURP 80V 100MA SSD3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 70 V
  • Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SSD3
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
100 nA @ 70 V
3.5pF @ 6V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SSD3
150°C
JAN1N6492U4
Microchip Technology

DIODE SCHOTTKY 45V 3.6A U4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 45 V
  • Capacitance @ Vr, F: 450pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
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45 V
3.6A
560 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 45 V
450pF @ 5V, 1MHz
Surface Mount
3-SMD, No Lead
U4
-65°C ~ 175°C
JANS1N6873UTK2-TR
Microchip Technology

POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
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-
-
-
-
-
-
-
-
-
-
-
S4240TS
Microchip Technology

DIODE GEN PURP 400V 125A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
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400 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 400 V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
FR203-TP
Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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200 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
40pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
RGL1GR13
Diotec Semiconductor

DIODE FAST MINIMELF 400V 150NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA, MINI-MELF
  • Operating Temperature - Junction: -50°C ~ 175°C
封裝: -
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400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
-
Surface Mount
DO-213AA
DO-213AA, MINI-MELF
-50°C ~ 175°C