頁 463 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4005-N-2-3-AP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存3,984	600V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
LL101B-13	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 30MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 400mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 40V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	封裝: DO-213AC, MINI-MELF, SOD-80	庫存6,400	50V	30mA (DC)	400mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2.1pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
GP10DEHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存3,488	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
STTH312B	STMicroelectronics	DIODE GEN PURP 1.2KV 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存7,872	1200V	3A	2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	10µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
D2601N90T	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 9000V 3460A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存3,424	-	-	-	-	-	-	-	-	-	-	-
R6002225XXYA	Powerex Inc.	DIODE GEN PURP 2.2KV 250A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-205AB, DO-9, Stud	庫存3,568	2200V	250A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 2200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
A398N	Powerex Inc.	DIODE GEN PURP 800V 400A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	封裝: DO-200AA, A-PUK	庫存7,456	800V	400A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 175°C
HSM3100J/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-214AB, SMC	庫存4,080	100V	3A	810mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
6A04B-G	Comchip Technology	DIODE GEN PURP 400V 6A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C	封裝: R6, Axial	庫存6,304	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	100pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 125°C
SS24HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AA, SMB	庫存2,000	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
B290Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 90V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7µA @ 90V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AA, SMB	庫存7,040	90V	2A	790mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	7µA @ 90V	75pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
GL41AHE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-213AB, MELF (Glass)	庫存5,296	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SS220LWHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 150°C	封裝: SOD-123W	庫存7,584	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
EGP50D-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存6,560	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	95pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
BYG22B-E3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 2A DO214AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存600,000	100V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CCS15S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max)	封裝: 2-SMD, No Lead	庫存6,880	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2C	125°C (Max)
S210	Fairchild/ON Semiconductor	DIODE SCHOTTKY 100V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 125°C	封裝: DO-214AA, SMB	庫存786,060	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 125°C
RFU02VSM6STR	Rohm Semiconductor	DIODE GP 600V 200MA TUMD2SM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 2.2V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max)	封裝: 2-SMD, Flat Lead	庫存44,604	600V	200mA	2.2V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 600V	5pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	TUMD2SM	150°C (Max)
STPST10H100SBYTR	STMicroelectronics	AUTOMOTIVE 100 V, 10 A, DPAK POW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 715 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 26 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	庫存7,326	100 V	10A	715 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	26 µA @ 100 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-40°C ~ 175°C
FR107-T-B	MDD	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 6 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	6 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
MSASC25H15K-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
55HQ030	Microchip Technology	DIODE SCHOTTKY 30V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	30 V	60A	480 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
STB15100	SMC Diode Solutions	DIODE SCHOTTKY 100V D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 686pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存225	100 V	-	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	686pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HER304BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	300 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
CDBUR0230L-HF	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0603 SO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: 125°C	封裝: -	Request a Quote	30 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	-	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C
SDM260P1-7	Diodes Incorporated	DIODE SCHOTTKY 60V 2A PWRDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 52pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -	封裝: -	Request a Quote	60 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	52pF @ 10V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-
ND350N16KHPSA1	Infineon Technologies	DIODE GP 1.6KV 350A PB50ND-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C	封裝: -	Request a Quote	1600 V	350A	-	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 1600 V	-	Chassis Mount	Module	BG-PB50ND-1	-40°C ~ 135°C
1N1661	Solid State Inc.	DIODE GEN PURP 100V 275A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	封裝: -	Request a Quote	100 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 100 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C

1N4005-N-2-3-AP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存3,984

600V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

LL101B-13

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 30MA SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 40V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)

封裝: DO-213AC, MINI-MELF, SOD-80

庫存6,400

50V

30mA (DC)

400mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 40V

2.1pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

125°C (Max)

GP10DEHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存3,488

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

STTH312B

STMicroelectronics

DIODE GEN PURP 1.2KV 3A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 175°C (Max)

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,872

1200V

3A

2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

115ns

10µA @ 1200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

175°C (Max)

D2601N90T

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 9000V 3460A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存3,424

-

R6002225XXYA

Powerex Inc.

DIODE GEN PURP 2.2KV 250A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-205AB, DO-9, Stud

庫存3,568

2200V

250A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 2200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 175°C

A398N

Powerex Inc.

DIODE GEN PURP 800V 400A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 175°C

封裝: DO-200AA, A-PUK

庫存7,456

800V

400A

-

Standard Recovery >500ns, > 200mA (Io)

1.5µs

-

Chassis Mount

DO-200AA, A-PUK

-

-40°C ~ 175°C

HSM3100J/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-214AB, SMC

庫存4,080

100V

3A

810mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

6A04B-G

Comchip Technology

DIODE GEN PURP 400V 6A R6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C

封裝: R6, Axial

庫存6,304

400V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

100pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 125°C

SS24HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AA, SMB

庫存2,000

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

B290Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 90V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7µA @ 90V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AA, SMB

庫存7,040

90V

2A

790mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

7µA @ 90V

75pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

GL41AHE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-213AB, MELF (Glass)

庫存5,296

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SS220LWHRVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123W

庫存7,584

200V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Surface Mount

SOD-123W

SOD123W

-55°C ~ 150°C

EGP50D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存6,560

200V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

95pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

BYG22B-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A DO214AC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存600,000

100V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CCS15S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)

封裝: 2-SMD, No Lead

庫存6,880

20V

1.5A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

CST2C

125°C (Max)

S210

Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 125°C

封裝: DO-214AA, SMB

庫存786,060

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 125°C

RFU02VSM6STR

Rohm Semiconductor

DIODE GP 600V 200MA TUMD2SM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)

封裝: 2-SMD, Flat Lead

庫存44,604

600V

200mA

2.2V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 600V

5pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

TUMD2SM

150°C (Max)

STPST10H100SBYTR

STMicroelectronics

AUTOMOTIVE 100 V, 10 A, DPAK POW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 715 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 26 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

庫存7,326

100 V

10A

715 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

26 µA @ 100 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-40°C ~ 175°C

FR107-T-B

MDD

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 6 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

6 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

MSASC25H15K-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

55HQ030

Microchip Technology

DIODE SCHOTTKY 30V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

30 V

60A

480 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 150°C

STB15100

SMC Diode Solutions

DIODE SCHOTTKY 100V D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: 686pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存225

100 V

-

750 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

686pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HER304BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 300V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

300 V

3A

1.1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

CDBUR0230L-HF

Comchip Technology

DIODE SCHOTTKY 30V 200MA 0603 SO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603/SOD-523F
Operating Temperature - Junction: 125°C

封裝: -

Request a Quote

30 V

200mA

500 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

30 µA @ 10 V

-

Surface Mount

2-SMD, No Lead

0603/SOD-523F

125°C

SDM260P1-7

Diodes Incorporated

DIODE SCHOTTKY 60V 2A PWRDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -

封裝: -

Request a Quote

60 V

2A

620 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

52pF @ 10V, 1MHz

Surface Mount

POWERDI®123

PowerDI™ 123

-

ND350N16KHPSA1

Infineon Technologies

DIODE GP 1.6KV 350A PB50ND-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 350A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C

封裝: -

Request a Quote

1600 V

350A

-

Standard Recovery >500ns, > 200mA (Io)

-

30 mA @ 1600 V

-

Chassis Mount

Module

BG-PB50ND-1

-40°C ~ 135°C

1N1661

Solid State Inc.

DIODE GEN PURP 100V 275A DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

封裝: -

Request a Quote

100 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 100 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C