頁 45 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CD0805-B140	Bourns Inc.	BARRIER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存2,352	-	-	-	-	-	-	-	-	-	-	-
R9G20611ASOO	Powerex Inc.	DIODE FAST REC R9G 1100A 600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存7,872	-	-	-	-	-	-	-	-	-	-	-
DLE30C	ON Semiconductor	DIODE GEN PURP 200V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: Axial Operating Temperature - Junction: 150°C (Max)	封裝: DO-201AD, Axial	庫存5,216	200V	3A	980mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	150°C (Max)
129NQ135R-1	SMC Diode Solutions	DIODE SCHOTTKY 135V 120A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 135V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 135V Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 175°C	封裝: HALF-PAK	庫存5,888	135V	120A	1.07V @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 135V	3000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
VS-40HF80M	Vishay Semiconductor Diodes Division	DIODE STD REC 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	封裝: DO-203AB, DO-5, Stud	庫存3,840	800V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
1N5804	Semtech Corporation	D MET 2.5A SFST 100V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存6,496	-	-	-	-	-	-	-	-	-	-	-
CSFC302-G	Comchip Technology	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	封裝: DO-214AB, SMC	庫存2,128	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
VSSB7L45-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 3.8A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 3.8A (DC) Voltage - Forward (Vf) (Max) @ If: 430mV @ 3.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.6mA @ 45V Capacitance @ Vr, F: 1068pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C	封裝: DO-214AA, SMB	庫存5,648	45V	3.8A (DC)	430mV @ 3.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.6mA @ 45V	1068pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-40°C ~ 150°C
U1B-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存4,240	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	5µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS210-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AC, SMA	庫存7,760	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
NSR01F30MXT5G	ON Semiconductor	DIODE SCHOTTKY 30V 100MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-X3DFN (0.62x0.32) Operating Temperature - Junction: 125°C (Max)	封裝: 2-XDFN	庫存7,088	30V	100mA (DC)	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	0.9pF @ 10V, 1MHz	Surface Mount	2-XDFN	2-X3DFN (0.62x0.32)	125°C (Max)
BAS70-00-G3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 70V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 125°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,544	70V	200mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 50V	2pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	125°C (Max)
VS-85HFL60S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存4,688	600V	85A	1.75V @ 266.9A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
MBRS140T3G	ON Semiconductor	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C	封裝: DO-214AA, SMB	庫存5,610,456	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 125°C
DSS26U	SMC Diode Solutions	60V, 2A, SOD-123FL, DIODE SCHOTT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存44,988	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	80pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
S6D10065D1	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 33A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 769pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存900	650 V	33A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	769pF @ 0V, 1MHz	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
US1B	Diotec Semiconductor	DIODE GP 100V 1A DO214AC SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	庫存22,308	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
UF504IG_AY_00001	Panjit International Inc.	DIODE GEN PURP 400V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	400 V	5A	1.25 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
USD545HR2	Microchip Technology	DIODE SCHOTTKY 45V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: 175°C	封裝: -	Request a Quote	45 V	75A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	175°C
85HFR100	Solid State Inc.	DIODE GEN PURP 1KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	1000 V	85A	1.3 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 1000 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
JANTXV1N6765R	Microchip Technology	DIODE GEN PURP 200V 12A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	封裝: -	Request a Quote	200 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	300pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
QH30TZ625	Power Integrations	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 625 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28.4 ns Current - Reverse Leakage @ Vr: 500 µA @ 625 V Capacitance @ Vr, F: 142pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	625 V	30A	3.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	28.4 ns	500 µA @ 625 V	142pF @ 10V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
CMR1U-04M-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 400V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
TSN525M60H	Taiwan Semiconductor Corporation	25A, 60V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-PDFN (5.2x5.7) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	60 V	25A	630 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	8-PowerLDFN	8-PDFN (5.2x5.7)	-55°C ~ 150°C
R4210TS	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	100 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
S2K-LTP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	800 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
V10P15-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	庫存12,717	150 V	10A	1.08 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
NTE125	NTE Electronics, Inc	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C

CD0805-B140

Bourns Inc.

BARRIER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存2,352

-

R9G20611ASOO

Powerex Inc.

DIODE FAST REC R9G 1100A 600V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存7,872

-

DLE30C

ON Semiconductor

DIODE GEN PURP 200V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: 150°C (Max)

封裝: DO-201AD, Axial

庫存5,216

200V

3A

980mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

-

Through Hole

DO-201AD, Axial

Axial

150°C (Max)

129NQ135R-1

SMC Diode Solutions

DIODE SCHOTTKY 135V 120A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 135V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 135V
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: HALF-PAK

庫存5,888

135V

120A

1.07V @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 135V

3000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 175°C

VS-40HF80M

Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C

封裝: DO-203AB, DO-5, Stud

庫存3,840

800V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 190°C

1N5804

Semtech Corporation

D MET 2.5A SFST 100V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存6,496

-

CSFC302-G

Comchip Technology

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 150°C (Max)

封裝: DO-214AB, SMC

庫存2,128

100V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

150°C (Max)

VSSB7L45-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 3.8A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 3.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 430mV @ 3.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.6mA @ 45V
Capacitance @ Vr, F: 1068pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-214AA, SMB

庫存5,648

45V

3.8A (DC)

430mV @ 3.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.6mA @ 45V

1068pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-40°C ~ 150°C

U1B-E3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存4,240

100V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

5µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS210-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AC, SMA

庫存7,760

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

NSR01F30MXT5G

ON Semiconductor

DIODE SCHOTTKY 30V 100MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: 2-X3DFN (0.62x0.32)
Operating Temperature - Junction: 125°C (Max)

封裝: 2-XDFN

庫存7,088

30V

100mA (DC)

600mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

0.9pF @ 10V, 1MHz

Surface Mount

2-XDFN

2-X3DFN (0.62x0.32)

125°C (Max)

BAS70-00-G3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 70V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,544

70V

200mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

100nA @ 50V

2pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

125°C (Max)

VS-85HFL60S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存4,688

600V

85A

1.75V @ 266.9A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

100µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

MBRS140T3G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C

封裝: DO-214AA, SMB

庫存5,610,456

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 125°C

DSS26U

SMC Diode Solutions

60V, 2A, SOD-123FL, DIODE SCHOTT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存44,988

60 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

80pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

S6D10065D1

SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 33A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 769pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存900

650 V

33A

1.5 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

769pF @ 0V, 1MHz

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

US1B

Diotec Semiconductor

DIODE GP 100V 1A DO214AC SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

庫存22,308

100 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

UF504IG_AY_00001

Panjit International Inc.

DIODE GEN PURP 400V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

400 V

5A

1.25 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 400 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

USD545HR2

Microchip Technology

DIODE SCHOTTKY 45V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C

封裝: -

Request a Quote

45 V

75A

680 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 mA @ 45 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

175°C

85HFR100

Solid State Inc.

DIODE GEN PURP 1KV 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

1000 V

85A

1.3 V @ 85 A

Standard Recovery >500ns, > 200mA (Io)

-

200 µA @ 1000 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

JANTXV1N6765R

Microchip Technology

DIODE GEN PURP 200V 12A TO254

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -

封裝: -

Request a Quote

200 V

12A

1.05 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

300pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-

QH30TZ625

Power Integrations

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 625 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28.4 ns
Current - Reverse Leakage @ Vr: 500 µA @ 625 V
Capacitance @ Vr, F: 142pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

625 V

30A

3.15 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

28.4 ns

500 µA @ 625 V

142pF @ 10V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

CMR1U-04M-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

TSN525M60H

Taiwan Semiconductor Corporation

25A, 60V, TRENCH SCHOTTKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-PDFN (5.2x5.7)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

60 V

25A

630 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

8-PowerLDFN

8-PDFN (5.2x5.7)

-55°C ~ 150°C

R4210TS

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

100 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

S2K-LTP-HF

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

800 V

2A

1.15 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

V10P15-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

庫存12,717

150 V

10A

1.08 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 150 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

NTE125

NTE Electronics, Inc

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C