頁 414 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MMBD1201_D87Z	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,576	100V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
VS-45LR40	Vishay Semiconductor Diodes Division	DIODE STD REC 400V 150A DO-8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	封裝: DO-205AA, DO-8, Stud	庫存6,784	400V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
RJS6005TDPP-EJ#T2	Renesas Electronics America	DIODE SCHOTTKY 600V 15A TO220FP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP-2L Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack	庫存6,864	600V	15A (DC)	1.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220FP-2L	-55°C ~ 150°C
UFS330GE3/TR13	Microsemi Corporation	DIODE GEN PURP 300V 3A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-215AB, SMC Gull Wing	庫存6,992	300V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
HSM840GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-215AB, SMC Gull Wing	庫存5,008	40V	8A	620mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 40V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
SS3P3L-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-277, 3-PowerDFN	庫存4,400	30V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
AS01AWS	Sanken	DIODE GEN PURP 600V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封裝: Axial	庫存5,056	600V	600mA	1.5V @ 600mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
SS310L R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-219AB	庫存7,040	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UG06B A0G	TSC America Inc.	DIODE, ULTRA FAST, 0.6A, 100V, 1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: T-18, Axial	庫存3,568	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
CDBFR0540	Comchip Technology	DIODE SCHOTTKY 40V 500MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	封裝: 1005 (2512 Metric)	庫存4,576	40V	500mA	640mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	20µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SE20PG-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-220AA	庫存3,728	400V	1.6A	1.05V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 400V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SE15PJHM3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 900ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-220AA	庫存7,776	600V	1.5A	1.05V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	900ns	5µA @ 600V	9.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
BAS70Q-7-F	Diodes Incorporated	SCHOTTKY DIODE SOT23 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存6,144	-	-	-	-	-	-	-	-	-	-	-
PMEG2005BELD,315	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOD882 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 40pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C (Max)	封裝: SOD-882	庫存7,744	20V	500mA	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	1.6ns	200µA @ 20V	40pF @ 1V, 1MHz	Surface Mount	SOD-882	DFN1006-2	150°C (Max)
BAV21WS-7-F	Diodes Incorporated	DIODE GEN PURP 200V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	封裝: SC-76, SOD-323	庫存6,062,436	200V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
SK310A-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 125°C	封裝: DO-214AC, SMA	庫存121,140	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 125°C
1N2284	Solid State Inc.	DIODE GEN PURP 500V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	500 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
RB751V-40WS	Taiwan Semiconductor Corporation	SOD-323F, 40V, 0.03A, SCHOTTKY D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -40°C ~ 125°C	封裝: -	Request a Quote	40 V	30mA	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 40 V	2pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-40°C ~ 125°C
CD214C-FS3J	Bourns Inc.	DIODE GEN PURP 600V 3A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	庫存26,646	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	19pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
IDL12G65C5XUMA2	Infineon Technologies	DIODE SIL CARB 650V 12A VSON-4 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 190 µA @ 650 V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存45,780	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
SS13HE3-LTP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 52pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: -	Request a Quote	30 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	52pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
PMEG120G30ELPX	Nexperia USA Inc.	DIODE SIGE 120V 3A SOD128/CFP5 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Current - Reverse Leakage @ Vr: 30 nA @ 120 V Capacitance @ Vr, F: 103pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max)	封裝: -	庫存57,141	120 V	3A	840 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	11 ns	30 nA @ 120 V	103pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C (Max)
MBR8U60-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 8A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存42,246	60 V	8A	500 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
RGF1MHE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	8.5pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
SR304	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	封裝: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
CMS08-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Capacitance @ Vr, F: 70pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	封裝: -	庫存7,455	30 V	1A	370 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	70pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
SB140S	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-41, Axial Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	-	Through Hole	DO-204AC, DO-41, Axial	DO-204AC (DO-41)	-50°C ~ 150°C
TSSA3U45H	Taiwan Semiconductor Corporation	3A, 45V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存44,985	45 V	3A	480 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

MMBD1201_D87Z

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,576

100V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C (Max)

VS-45LR40

Vishay Semiconductor Diodes Division

DIODE STD REC 400V 150A DO-8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C

封裝: DO-205AA, DO-8, Stud

庫存6,784

400V

150A

1.33V @ 471A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 200°C

RJS6005TDPP-EJ#T2

Renesas Electronics America

DIODE SCHOTTKY 600V 15A TO220FP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP-2L
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack

庫存6,864

600V

15A (DC)

1.8V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220FP-2L

-55°C ~ 150°C

UFS330GE3/TR13

Microsemi Corporation

DIODE GEN PURP 300V 3A DO215AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-215AB, SMC Gull Wing

庫存6,992

300V

3A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

HSM840GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 8A DO215AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-215AB, SMC Gull Wing

庫存5,008

40V

8A

620mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 40V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

SS3P3L-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-277, 3-PowerDFN

庫存4,400

30V

3A

470mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 30V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

AS01AWS

Sanken

DIODE GEN PURP 600V 600MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Axial

庫存5,056

600V

600mA

1.5V @ 600mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

SS310L R3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

庫存7,040

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

UG06B A0G

TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 100V, 1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: T-18, Axial

庫存3,568

100V

600mA

950mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 100V

9pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

CDBFR0540

Comchip Technology

DIODE SCHOTTKY 40V 500MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

封裝: 1005 (2512 Metric)

庫存4,576

40V

500mA

640mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

20µA @ 40V

170pF @ 0V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

SE20PG-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.6A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-220AA

庫存3,728

400V

1.6A

1.05V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 400V

13pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

SE15PJHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-220AA

庫存7,776

600V

1.5A

1.05V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

900ns

5µA @ 600V

9.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

BAS70Q-7-F

Diodes Incorporated

SCHOTTKY DIODE SOT23

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存6,144

-

PMEG2005BELD,315

Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOD882

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 40pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 150°C (Max)

封裝: SOD-882

庫存7,744

20V

500mA

390mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

1.6ns

200µA @ 20V

40pF @ 1V, 1MHz

Surface Mount

SOD-882

DFN1006-2

150°C (Max)

BAV21WS-7-F

Diodes Incorporated

DIODE GEN PURP 200V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SC-76, SOD-323

庫存6,062,436

200V

200mA

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

SK310A-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 125°C

封裝: DO-214AC, SMA

庫存121,140

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

250pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 125°C

1N2284

Solid State Inc.

DIODE GEN PURP 500V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

500 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

RB751V-40WS

Taiwan Semiconductor Corporation

SOD-323F, 40V, 0.03A, SCHOTTKY D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C

封裝: -

Request a Quote

40 V

30mA

370 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 40 V

2pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

-40°C ~ 125°C

CD214C-FS3J

Bourns Inc.

DIODE GEN PURP 600V 3A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

庫存26,646

600 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

19pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

IDL12G65C5XUMA2

Infineon Technologies

DIODE SIL CARB 650V 12A VSON-4

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存45,780

650 V

12A

1.7 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

190 µA @ 650 V

360pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 150°C

SS13HE3-LTP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

Request a Quote

30 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

52pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

PMEG120G30ELPX

Nexperia USA Inc.

DIODE SIGE 120V 3A SOD128/CFP5

Diode Type: SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)

封裝: -

庫存57,141

120 V

3A

840 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

11 ns

30 nA @ 120 V

103pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C (Max)

MBR8U60-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 8A TO277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存42,246

60 V

8A

500 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C

RGF1MHE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

8.5pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

SR304

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

Request a Quote

40 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

CMS08-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: -

庫存7,455

30 V

1A

370 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 30 V

70pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 125°C

SB140S

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

40 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

-

Through Hole

DO-204AC, DO-41, Axial

DO-204AC (DO-41)

-50°C ~ 150°C

TSSA3U45H

Taiwan Semiconductor Corporation

3A, 45V, TRENCH SCHOTTKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存44,985

45 V

3A

480 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C