頁 316 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYW76RAS15-10-PH	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A SOD64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	封裝: SOD-64, Axial	庫存2,032	600V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
STTH1R04	STMicroelectronics	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max)	封裝: DO-204AL, DO-41, Axial	庫存2,704	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	175°C (Max)
MA27D2700L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 100MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 300nA @ 10V Capacitance @ Vr, F: 11pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F2 Operating Temperature - Junction: 150°C (Max)	封裝: 2-SMD, Flat Lead	庫存162,000	20V	100mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1ns	300nA @ 10V	11pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F2	150°C (Max)
VS-MBR350	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 730mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 50V Capacitance @ Vr, F: 190pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: C-16, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	封裝: C-16, Axial	庫存7,856	50V	3A	730mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 50V	190pF @ 4V, 1MHz	Through Hole	C-16, Axial	C-16	-40°C ~ 150°C
R7220808ESOO	Powerex Inc.	DIODE MODULE 800V 800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存4,640	800V	800A	1.65V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 800V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-60APF06PBF	Vishay Semiconductor Diodes Division	DIODE INPUT 60A 600V TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-247-3	庫存6,272	600V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
HSM340GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 3A 40V SMCG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存2,304	-	-	-	-	-	-	-	-	-	-	-
STTH20P035FP	STMicroelectronics	DIODE GEN PURP 350V 20A TO220FP Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存38,580	-	-	-	-	-	-	-	-	-	-	-
BYWB29-150HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,792	150V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
SF45GHR0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存7,280	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N4937E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封裝: DO-204AL, DO-41, Axial	庫存3,664	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
S1AFJ-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.47µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-221AC, SMA Flat Leads	庫存3,472	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.47µs	5µA @ 600V	7.9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 150°C
PMEG4020ETR,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 95pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 175°C (Max)	封裝: SOD-123W	庫存2,352	40V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-123W	CFP3	175°C (Max)
ES1K-TP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-214AC, SMA	庫存2,336	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
STPS3L45AF	STMicroelectronics	DIODE SCHOTTKY 45V 3A SMAFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAflat Operating Temperature - Junction: 150°C (Max)	封裝: DO-221AC, SMA Flat Leads	庫存3,328	45V	3A	570mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMAflat	150°C (Max)
1N2244	Microchip Technology	DIODE GEN PURP 1.2KV 5A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	1200 V	5A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
SL12HE3_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 20V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: -	Request a Quote	20 V	1.5A	445 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
VSS8D5M12HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTT 100V 2.2A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 120 V Capacitance @ Vr, F: 460pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	庫存19,044	100 V	2.2A	620 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 120 V	460pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C
S50460	Microchip Technology	DIODE GP 600V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	600 V	300A	1.25 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
ER5A-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	50 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 50 V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
US1M-AQ	Diotec Semiconductor	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	庫存43,200	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
ES3D-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ISL9R3060G2-F085	onsemi	DIODE GEN PURP 600V 30A TO247-2 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存714	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	100 µA @ 600 V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SMS560-3G	Diotec Semiconductor	SCHOTTKY MELF 60V 5A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	60 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 60 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 150°C
SS24HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
SSB44HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 4A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	庫存18,900	40 V	4A	490 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
STPS160AFN	STMicroelectronics	DIODE SCHOTTKY 60V 1A SMAFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAflat Notch Operating Temperature - Junction: 150°C	封裝: -	庫存19,461	60 V	1A	670 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 µA @ 60 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMAflat Notch	150°C
JAN1N6305	Microchip Technology	DIODE GEN PURP 100V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	100 V	70A	1.18 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C

BYW76RAS15-10-PH

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A SOD64

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

封裝: SOD-64, Axial

庫存2,032

600V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

STTH1R04

STMicroelectronics

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)

封裝: DO-204AL, DO-41, Axial

庫存2,704

400V

1A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

175°C (Max)

MA27D2700L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 100MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 300nA @ 10V
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F2
Operating Temperature - Junction: 150°C (Max)

封裝: 2-SMD, Flat Lead

庫存162,000

20V

100mA

580mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1ns

300nA @ 10V

11pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F2

150°C (Max)

VS-MBR350

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A C16

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 50V
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: C-16, Axial
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C

封裝: C-16, Axial

庫存7,856

50V

3A

730mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 50V

190pF @ 4V, 1MHz

Through Hole

C-16, Axial

C-16

-40°C ~ 150°C

R7220808ESOO

Powerex Inc.

DIODE MODULE 800V 800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存4,640

800V

800A

1.65V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 800V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-60APF06PBF

Vishay Semiconductor Diodes Division

DIODE INPUT 60A 600V TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-247-3

庫存6,272

600V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 600V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

HSM340GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 3A 40V SMCG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存2,304

-

STTH20P035FP

STMicroelectronics

DIODE GEN PURP 350V 20A TO220FP

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存38,580

-

BYWB29-150HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,792

150V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

SF45GHR0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存7,280

300V

4A

1.3V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N4937E-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封裝: DO-204AL, DO-41, Axial

庫存3,664

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

12pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

S1AFJ-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-221AC, SMA Flat Leads

庫存3,472

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.47µs

5µA @ 600V

7.9pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 150°C

PMEG4020ETR,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 2A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C (Max)

封裝: SOD-123W

庫存2,352

40V

2A

490mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

95pF @ 10V, 1MHz

Surface Mount

SOD-123W

CFP3

175°C (Max)

ES1K-TP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-214AC, SMA

庫存2,336

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

-

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 150°C

STPS3L45AF

STMicroelectronics

DIODE SCHOTTKY 45V 3A SMAFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)

封裝: DO-221AC, SMA Flat Leads

庫存3,328

45V

3A

570mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMAflat

150°C (Max)

1N2244

Microchip Technology

DIODE GEN PURP 1.2KV 5A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

1200 V

5A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

SL12HE3_B-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 20V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

Request a Quote

20 V

1.5A

445 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 20 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

VSS8D5M12HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 100V 2.2A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.2A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Capacitance @ Vr, F: 460pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

庫存19,044

100 V

2.2A

620 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

350 µA @ 120 V

460pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C

S50460

Microchip Technology

DIODE GP 600V 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

600 V

300A

1.25 V @ 1000 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 600 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

ER5A-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

50 V

5A

1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 50 V

100pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

US1M-AQ

Diotec Semiconductor

DIODE GEN PURP 1KV 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

庫存43,200

1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

ES3D-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

10 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ISL9R3060G2-F085

onsemi

DIODE GEN PURP 600V 30A TO247-2

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存714

600 V

30A

2.4 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

100 µA @ 600 V

-

Through Hole

TO-247-2

-55°C ~ 175°C

SMS560-3G

Diotec Semiconductor

SCHOTTKY MELF 60V 5A 150C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

60 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 60 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB

-50°C ~ 150°C

SS24HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

SSB44HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 4A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

庫存18,900

40 V

4A

490 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

STPS160AFN

STMicroelectronics

DIODE SCHOTTKY 60V 1A SMAFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAflat Notch
Operating Temperature - Junction: 150°C

封裝: -

庫存19,461

60 V

1A

670 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

4 µA @ 60 V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMAflat Notch

150°C

JAN1N6305

Microchip Technology

DIODE GEN PURP 100V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

100 V

70A

1.18 V @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

25 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C