頁 289 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UF4005 BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存4,144	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	75ns	10µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
FFB20U60STM	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 20A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,608	600V	20A	2.2V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	10µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
MURH10010	GeneSiC Semiconductor	DIODE MODULE 100V 100A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	封裝: D-67	庫存2,896	100V	100A	1.3V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 50V	-	Chassis Mount	D-67	D-67	-
JANTXV1N5615US	Microsemi Corporation	DIODE FAST REC 200V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封裝: SQ-MELF, A	庫存3,536	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 600V	45pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
UH2D-M3/52T	Vishay Semiconductor Diodes Division	DIODE 2A 200V 25NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 42pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-214AA, SMB	庫存3,872	200V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	42pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MURS340SHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AA, SMB	庫存5,440	400V	1.5A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
GI250-1-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 250MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存3,968	1000V	250mA	3.5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	3pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SE15PJHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 900ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-220AA	庫存4,160	600V	1.5A	1.05V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	900ns	5µA @ 600V	9.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SS1H10-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 1A 100V DO-214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AC, SMA	庫存6,752	100V	1A	860mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
UG1D-M3/54	Vishay Semiconductor Diodes Division	DIODE 1A 200V 15NS DO-204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存5,440	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4947GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存3,360	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4150W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封裝: SOD-123	庫存3,392	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
DFLS1100Q-7	Diodes Incorporated	DIODE SCHOTTKY 100V POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 36pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 175°C	封裝: POWERDI?123	庫存2,448	100V	1A	860mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	36pF @ 5V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 175°C
CDBFR03100-HF	Comchip Technology	DIODE SCHOTTKY 100V 300MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 820mV @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: -40°C ~ 150°C	封裝: SC-90, SOD-323F	庫存4,912	100V	300mA	820mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	25pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	1005/SOD-323F	-40°C ~ 150°C
BAX16TR	Fairchild/ON Semiconductor	DIODE GEN PURP 150V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	封裝: DO-204AH, DO-35, Axial	庫存3,696	150V	200mA	650mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	120ns	100nA @ 150V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
SB240-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	40 V	2A	500 mV @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	500 µA @ 40 V	170pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
GD20MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 39A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 39A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 737pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存9,507	1200 V	39A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
ES8BC-HF	Comchip Technology	DIODE GEN PURP 100V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	100 V	8A	980 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	90pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S36110	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GE1102	Harris Corporation	DIODE GEN PURP 100V 2.5A DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204, Axial Supplier Device Package: DO-204 Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	100 V	2.5A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 100 V	45pF @ 4V, 1MHz	Through Hole	DO-204, Axial	DO-204	-65°C ~ 175°C
SS310H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存7,518	100 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CDBC3200LR-HF	Comchip Technology	DIODE SCHOTTKY 200V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 200 V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 175°C	封裝: -	Request a Quote	200 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 200 V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-50°C ~ 175°C
S4D30120G0	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-2	-
JANTX1N6874UTK2CS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N1438R	Solid State Inc.	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
RKR0202AQE-P1	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N4607-TR	Microchip Technology	DIODE GP REV 85V 200MA DO35 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 85 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	85 V	200mA	1.1 V @ 400 mA	Small Signal =< 200mA (Io), Any Speed	10 ns	100 µA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 200°C
JANTX1N5420-TR	Microchip Technology	DIODE GEN PURP 600V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C

UF4005 BK

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存4,144

600V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

75ns

10µA @ 600V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

FFB20U60STM

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 20A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,608

600V

20A

2.2V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

10µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

MURH10010

GeneSiC Semiconductor

DIODE MODULE 100V 100A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

封裝: D-67

庫存2,896

100V

100A

1.3V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 50V

-

Chassis Mount

D-67

-

JANTXV1N5615US

Microsemi Corporation

DIODE FAST REC 200V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封裝: SQ-MELF, A

庫存3,536

200V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 600V

45pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

UH2D-M3/52T

Vishay Semiconductor Diodes Division

DIODE 2A 200V 25NS DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-214AA, SMB

庫存3,872

200V

2A

1.05V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

42pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

MURS340SHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

庫存5,440

400V

1.5A

1.45V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 175°C

GI250-1-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 250MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存3,968

1000V

250mA

3.5V @ 250mA

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

3pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SE15PJHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-220AA

庫存4,160

600V

1.5A

1.05V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

900ns

5µA @ 600V

9.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

SS1H10-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 1A 100V DO-214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AC, SMA

庫存6,752

100V

1A

860mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 90V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 175°C

UG1D-M3/54

Vishay Semiconductor Diodes Division

DIODE 1A 200V 15NS DO-204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存5,440

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 200V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N4947GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存3,360

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N4150W-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123

庫存3,392

50V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

DFLS1100Q-7

Diodes Incorporated

DIODE SCHOTTKY 100V POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 175°C

封裝: POWERDI?123

庫存2,448

100V

1A

860mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

36pF @ 5V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 175°C

CDBFR03100-HF

Comchip Technology

DIODE SCHOTTKY 100V 300MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 820mV @ 300mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: -40°C ~ 150°C

封裝: SC-90, SOD-323F

庫存4,912

100V

300mA

820mV @ 300mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

25pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

1005/SOD-323F

-40°C ~ 150°C

BAX16TR

Fairchild/ON Semiconductor

DIODE GEN PURP 150V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

封裝: DO-204AH, DO-35, Axial

庫存3,696

150V

200mA

650mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

120ns

100nA @ 150V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

SB240-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

40 V

2A

500 mV @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

500 µA @ 40 V

170pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

GD20MPS12H

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 39A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 39A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存9,507

1200 V

39A

1.8 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 1200 V

737pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

ES8BC-HF

Comchip Technology

DIODE GEN PURP 100V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

100 V

8A

980 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 100 V

90pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

S36110

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

GE1102

Harris Corporation

DIODE GEN PURP 100V 2.5A DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204, Axial
Supplier Device Package: DO-204
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

100 V

2.5A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 100 V

45pF @ 4V, 1MHz

Through Hole

DO-204, Axial

DO-204

-65°C ~ 175°C

SS310H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存7,518

100 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

CDBC3200LR-HF

Comchip Technology

DIODE SCHOTTKY 200V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

Request a Quote

200 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 200 V

250pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-50°C ~ 175°C

S4D30120G0

SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263-2

-

JANTX1N6874UTK2CS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

1N1438R

Solid State Inc.

DIODE GEN PURP REV 600V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

600 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

RKR0202AQE-P1

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

1N4607-TR

Microchip Technology

DIODE GP REV 85V 200MA DO35

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 85 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

85 V

200mA

1.1 V @ 400 mA

Small Signal =< 200mA (Io), Any Speed

10 ns

100 µA @ 50 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 200°C

JANTX1N5420-TR

Microchip Technology

DIODE GEN PURP 600V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

600 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

400 ns

1 µA @ 600 V

-

Through Hole

B, Axial

-65°C ~ 175°C