頁 269 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP20GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-201AA, DO-27, Axial	庫存6,176	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 175°C
R9G00418XX	Powerex Inc.	DIODE MODULE 400V 1800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存4,240	400V	1800A	1.2V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 400V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-88HF100	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	封裝: DO-203AB, DO-5, Stud	庫存6,272	1000V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
UPS340/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 3A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-216AA	庫存3,984	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	180pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
VS-30WQ06FNTRLHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,624	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	145pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
MBRB1840TR	SMC Diode Solutions	DIODE SCHOTTKY 40V 18A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 580mV @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,352	40V	18A	580mV @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	250pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
ES3CHE3_A/H	Vishay Semiconductor Diodes Division	DIODE UFAST 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AB, SMC	庫存3,568	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
UG06A A1G	TSC America Inc.	DIODE, ULTRA FAST, 0.6A, 50V, 15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: T-18, Axial	庫存2,784	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG1A-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存4,032	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
VS-10MQ060-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 710mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 31pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	封裝: DO-214AC, SMA	庫存3,952	60V	1.5A	710mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	31pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
UF4004HR1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存5,952	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
2A03G R0G	TSC America Inc.	DIODE, 2A, 200V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AC, DO-15, Axial	庫存6,416	200V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BAS34-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 60V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1nA @ 30V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	封裝: DO-204AH, DO-35, Axial	庫存2,016	60V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 30V	3pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
RS1DTR	SMC Diode Solutions	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AC, SMA	庫存4,544	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 150°C
NRVBS3201T3G	ON Semiconductor	DIODE SCHOTTKY 200V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AB, SMC	庫存7,824	200V	3A	840mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
SE10DGHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 15µA @ 400V Capacitance @ Vr, F: 67pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab) Variant	庫存3,392	400V	3A	1.15V @ 10A	Standard Recovery >500ns, > 200mA (Io)	3µs	15µA @ 400V	67pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
FERD20M60ST	STMicroelectronics	DIODE GEN PURP 60V 20A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 560mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 230µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max)	封裝: TO-220-3	庫存12,732	60V	20A	560mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	230µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
JANTX1N4454-1-TR	Microchip Technology	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	50 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
1N648UR-1-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RS1FM-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	1000 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
FR101-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
EM518GP-AP	Micro Commercial Co	DIODE GEN PURP 2KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	2000 V	1A	1.25 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 2000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
RBR2L30ADDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 2A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	封裝: -	庫存4,404	30 V	2A	490 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
JTXM19500-469-05	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
US1R_R1_00001	Panjit International Inc.	DIODE GEN PURP 1.3KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存30,756	1300 V	1A	1.9 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 1300 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
US2M-HF	Comchip Technology	DIODE GEN PURP 1KV 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存28,344	1000 V	2A	1.65 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RBS5LAM40ATR	Rohm Semiconductor	DIODE SCHOTTKY 20V 5A PMDT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 125°C	封裝: -	庫存1,407	20 V	5A	490 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 20 V	-	Surface Mount	SOD-128	PMDTM	125°C
FR506-TP	Micro Commercial Co	DIODE GEN PURP 800V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	800 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 800 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

RGP20GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-201AA, DO-27, Axial

庫存6,176

400V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 175°C

R9G00418XX

Powerex Inc.

DIODE MODULE 400V 1800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存4,240

400V

1800A

1.2V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 400V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-88HF100

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

庫存6,272

1000V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

UPS340/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 3A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-216AA

庫存3,984

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

180pF @ 4V, 1MHz

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

VS-30WQ06FNTRLHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,624

60V

3.5A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 60V

145pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

MBRB1840TR

SMC Diode Solutions

DIODE SCHOTTKY 40V 18A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 250pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,352

40V

18A

580mV @ 18A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

250pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

ES3CHE3_A/H

Vishay Semiconductor Diodes Division

DIODE UFAST 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

庫存3,568

150V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

UG06A A1G

TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 50V, 15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: T-18, Axial

庫存2,784

50V

600mA

950mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 50V

9pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

UG1A-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存4,032

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

VS-10MQ060-M3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 710mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-214AC, SMA

庫存3,952

60V

1.5A

710mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

31pF @ 10V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-40°C ~ 150°C

UF4004HR1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存5,952

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

2A03G R0G

TSC America Inc.

DIODE, 2A, 200V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AC, DO-15, Axial

庫存6,416

200V

2A

1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

BAS34-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1nA @ 30V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

封裝: DO-204AH, DO-35, Axial

庫存2,016

60V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1nA @ 30V

3pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

RS1DTR

SMC Diode Solutions

DIODE GEN PURP 200V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AC, SMA

庫存4,544

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 150°C

NRVBS3201T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

庫存7,824

200V

3A

840mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1mA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

SE10DGHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 15µA @ 400V
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab) Variant

庫存3,392

400V

3A

1.15V @ 10A

Standard Recovery >500ns, > 200mA (Io)

3µs

15µA @ 400V

67pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

FERD20M60ST

STMicroelectronics

DIODE GEN PURP 60V 20A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 230µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)

封裝: TO-220-3

庫存12,732

60V

20A

560mV @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

230µA @ 60V

-

Through Hole

TO-220-3

TO-220AB

175°C (Max)

JANTX1N4454-1-TR

Microchip Technology

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

50 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

1N648UR-1-TR

Microchip Technology

SIGNAL OR COMPUTER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

RS1FM-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

1000 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

5pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

FR101-TP

Micro Commercial Co

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

EM518GP-AP

Micro Commercial Co

DIODE GEN PURP 2KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

2000 V

1A

1.25 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 2000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

RBR2L30ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

封裝: -

庫存4,404

30 V

2A

490 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

JTXM19500-469-05

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

US1R_R1_00001

Panjit International Inc.

DIODE GEN PURP 1.3KV 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存30,756

1300 V

1A

1.9 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 1300 V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

US2M-HF

Comchip Technology

DIODE GEN PURP 1KV 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存28,344

1000 V

2A

1.65 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RBS5LAM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 20V 5A PMDT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 125°C

封裝: -

庫存1,407

20 V

5A

490 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 µA @ 20 V

-

Surface Mount

SOD-128

PMDTM

125°C

FR506-TP

Micro Commercial Co

DIODE GEN PURP 800V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

800 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 800 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C