頁 244 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R5030213LSWA	Powerex Inc.	DIODE GEN PURP 200V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 700ns Current - Reverse Leakage @ Vr: 45mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	封裝: DO-205AA, DO-8, Stud	庫存5,728	200V	125A	2.5V @ 470A	Standard Recovery >500ns, > 200mA (Io)	700ns	45mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
R6200230XXOO	Powerex Inc.	DIODE MODULE 200V 300A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 6µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	封裝: DO-200AA, A-PUK	庫存4,224	200V	300A	1.7V @ 800A	Standard Recovery >500ns, > 200mA (Io)	6µs	50mA @ 200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
UGB5JT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,440	600V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
CMR1-06 BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AA, SMB	庫存7,296	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
RM 2AV	Sanken	DIODE GEN PURP 600V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	封裝: Axial	庫存2,224	600V	1.2A	910mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
HER306GT-G	Comchip Technology	DIODE GEN PURP 600V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存5,504	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 150°C
SS8PH10-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-277, 3-PowerDFN	庫存6,224	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 100V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SL23HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 395mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AA, SMB	庫存6,208	30V	2A	395mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SDT5H100LP5-13	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	封裝: PowerDI? 5	庫存5,024	100V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.5µA @ 100V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 150°C
ESH2D-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-214AA, SMB	庫存5,856	200V	2A	930mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ES1DLHRUG	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-219AB	庫存2,512	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
JANTX1N5623	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: A, Axial	庫存4,544	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4003-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存102,108	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
CMR3-10 TR13	Central Semiconductor Corp	DIODE GEN PURP 1000V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AB, SMC	庫存25,572	1000V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
S2GA-13-F	Diodes Incorporated	DIODE GEN PURP 400V 1.5A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AC, SMA	庫存120,000	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
RB168VYM-30FHTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.7 ns Current - Reverse Leakage @ Vr: 300 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存32,544	30 V	1A	730 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	4.7 ns	300 nA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
SBR12E45LH1-13R	Diodes Incorporated	DIODE SBR 45V 12A POWERDI5SP Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5SP Supplier Device Package: PowerDI5SP™ Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	45 V	12A	520 mV @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	300 µA @ 45 V	-	Surface Mount	PowerDI™ 5SP	PowerDI5SP™	-65°C ~ 150°C
1N6626-TR	Microchip Technology	DIODE GEN PURP 220V 1.75A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220 V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 220 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	220 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 220 V	40pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 150°C
NRVS2B	onsemi	DIODE GEN PURP 100V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	庫存9,000	100 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
DSEP12-12BZ-TUB	IXYS	DIODE GEN PURP 1.2KV 12A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 5pF @ 600V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存150	1200 V	12A	3.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	100 µA @ 1200 V	5pF @ 600V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-55°C ~ 175°C
BYS10-25HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 25V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 25 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	25 V	1.5A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 25 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SD101AW-HE3_A-18	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	封裝: -	Request a Quote	60 V	30mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
TUAS8JH	Taiwan Semiconductor Corporation	8A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 62pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存18,000	600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	62pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
SF37GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	500 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N1205A	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	500 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
BAS40W_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 25 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存9,000	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 25 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
DST1550S	Littelfuse Inc.	DIODE SCHOTTKY 50V 15A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存59,943	50 V	15A	560 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 50 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
CR3-120GPP-TR	Central Semiconductor Corp	DIODE GEN PURP 1.2KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	1200 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C

R5030213LSWA

Powerex Inc.

DIODE GEN PURP 200V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 700ns
Current - Reverse Leakage @ Vr: 45mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-205AA, DO-8, Stud

庫存5,728

200V

125A

2.5V @ 470A

Standard Recovery >500ns, > 200mA (Io)

700ns

45mA @ 200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

R6200230XXOO

Powerex Inc.

DIODE MODULE 200V 300A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6µs
Current - Reverse Leakage @ Vr: 50mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

封裝: DO-200AA, A-PUK

庫存4,224

200V

300A

1.7V @ 800A

Standard Recovery >500ns, > 200mA (Io)

6µs

50mA @ 200V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

UGB5JT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,440

600V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

CMR1-06 BK

Central Semiconductor Corp

DIODE GEN PURP 600V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AA, SMB

庫存7,296

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 600V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

RM 2AV

Sanken

DIODE GEN PURP 600V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Axial

庫存2,224

600V

1.2A

910mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

Axial

-40°C ~ 150°C

HER306GT-G

Comchip Technology

DIODE GEN PURP 600V 3A DO201AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存5,504

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

-55°C ~ 150°C

SS8PH10-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-277, 3-PowerDFN

庫存6,224

100V

8A

900mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 100V

140pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SL23HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 395mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AA, SMB

庫存6,208

30V

2A

395mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SDT5H100LP5-13

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 150°C

封裝: PowerDI? 5

庫存5,024

100V

5A

660mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3.5µA @ 100V

-

Surface Mount

PowerDI? 5

-55°C ~ 150°C

ESH2D-M3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-214AA, SMB

庫存5,856

200V

2A

930mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

ES1DLHRUG

TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

庫存2,512

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

JANTX1N5623

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: A, Axial

庫存4,544

1000V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

500nA @ 1000V

15pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

1N4003-TP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存102,108

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

CMR3-10 TR13

Central Semiconductor Corp

DIODE GEN PURP 1000V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AB, SMC

庫存25,572

1000V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

S2GA-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AC, SMA

庫存120,000

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

RB168VYM-30FHTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.7 ns
Current - Reverse Leakage @ Vr: 300 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存32,544

30 V

1A

730 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

4.7 ns

300 nA @ 30 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

SBR12E45LH1-13R

Diodes Incorporated

DIODE SBR 45V 12A POWERDI5SP

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5SP
Supplier Device Package: PowerDI5SP™
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

45 V

12A

520 mV @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

300 µA @ 45 V

-

Surface Mount

PowerDI™ 5SP

PowerDI5SP™

-65°C ~ 150°C

1N6626-TR

Microchip Technology

DIODE GEN PURP 220V 1.75A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220 V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 2 µA @ 220 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

220 V

1.75A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

2 µA @ 220 V

40pF @ 10V, 1MHz

Through Hole

A, Axial

-65°C ~ 150°C

NRVS2B

onsemi

DIODE GEN PURP 100V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

庫存9,000

100 V

2A

1.15 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

1 µA @ 100 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

DSEP12-12BZ-TUB

IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存150

1200 V

12A

3.25 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

100 µA @ 1200 V

5pF @ 600V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263HV

-55°C ~ 175°C

BYS10-25HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 25V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

25 V

1.5A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 25 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

SD101AW-HE3_A-18

Vishay

SCHOTTKY DIODE SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

封裝: -

Request a Quote

60 V

30mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

125°C

TUAS8JH

Taiwan Semiconductor Corporation

8A, 600V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存18,000

600 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

62pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 150°C

SF37GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

500 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 500 V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N1205A

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

500 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

BAS40W_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存9,000

40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 25 V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 150°C

DST1550S

Littelfuse Inc.

DIODE SCHOTTKY 50V 15A TO277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 mA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存59,943

50 V

15A

560 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3 mA @ 50 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 150°C

CR3-120GPP-TR

Central Semiconductor Corp

DIODE GEN PURP 1.2KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

1200 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1200 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C