頁 205 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
EGP30FHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存6,336	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
MUR840	ON Semiconductor	DIODE GEN PURP 400V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封裝: TO-220-2	庫存64,464	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
200HFR120PV	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 200A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 628A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 180°C	封裝: DO-205AC, DO-30, Stud	庫存6,320	1200V	200A	1.45V @ 628A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1200V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 180°C
R9G00618XX	Powerex Inc.	DIODE MODULE 600V 1800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存6,784	600V	1800A	1.2V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-SD1100C25L	Vishay Semiconductor Diodes Division	DIODE MODULE 2.5KV 910A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 910A Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 2500V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	封裝: B-43, PUK	庫存5,024	2500V	910A	1.44V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 2500V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
1N5831	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 25A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存3,776	35V	25A	580mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-ETH3006STRRHM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,896	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
MURS340-M3/57T	Vishay Semiconductor Diodes Division	DIODE RECT 3A 400V 50NS DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AB, SMC	庫存3,216	400V	3A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
ZHCS506QTA	Diodes Incorporated	DIODE SCHOTTKY 60V 500MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 630mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 40µA @ 45V Capacitance @ Vr, F: 20pF @ 25V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,208	60V	500mA (DC)	630mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	40µA @ 45V	20pF @ 25V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
BYM12-300HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-213AB, MELF (Glass)	庫存5,808	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	14pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SR304HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-201AD, Axial	庫存3,824	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SS13L M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-219AB	庫存7,376	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
S2GA M2G	TSC America Inc.	DIODE, 1.5A, 400V, DO-214AC (SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存5,728	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2B-TP	Micro Commercial Co	DIODE GEN PURP 100V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-214AC, SMA	庫存3,072	100V	2A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
IDH08G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存8,172	1200V	8A (DC)	1.95V @ 8A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	365pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
STPS20SM120STN	STMicroelectronics	DIODE SCHOTTKY 120V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 210µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Narrow Leads Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-3	庫存19,944	120V	20A	890mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	210µA @ 120V	-	Through Hole	TO-220-3	TO-220AB Narrow Leads	150°C (Max)
CUS05F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: -	封裝: SC-76, SOD-323	庫存100,086	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	120pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	-
PMEG045V150EPDAZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 15A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 490mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19ns Current - Reverse Leakage @ Vr: 900µA @ 15V Capacitance @ Vr, F: 1870pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: -65°C ~ 175°C	封裝: 3-SMD, Flat Leads	庫存32,658	45V	15A	490mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	900µA @ 15V	1870pF @ 1V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	-65°C ~ 175°C
STTH108A	STMicroelectronics	DIODE GEN PURP 800V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: 175°C (Max)	封裝: DO-214AC, SMA	庫存966,816	800V	1A	1.65V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	175°C (Max)
GS1010FL_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	庫存15,837	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-50°C ~ 150°C
JAN1N5621-TR	Microchip Technology	DIODE GEN PURP 800V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 500 nA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
S2AB-HF	Comchip Technology	DIODE GP 50V 2A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
VS-15EVH06-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	600 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	20 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
1N3595US-TR	Microchip Technology	DIODE GEN PURP 4A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	-	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	1 nA @ 125 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
SGL34-60	Diotec Semiconductor	DIODE SCHOTTKY 60V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	60 V	500mA	600 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 150°C
AR1FKHM3-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 800V 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	800 V	1A	1.6 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	1 µA @ 800 V	9.3pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
ER1Q-LTP	Micro Commercial Co	DIODE GEN PURP 1.2KV 1A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	庫存6,537	1200 V	1A	1.85 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 1200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
JANTX1N5811US-TR	Microchip Technology	DIODE GEN PURP 150V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C

EGP30FHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存6,336

300V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

MUR840

ON Semiconductor

DIODE GEN PURP 400V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-220-2

庫存64,464

400V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 400V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

200HFR120PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 200A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 628A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 180°C

封裝: DO-205AC, DO-30, Stud

庫存6,320

1200V

200A

1.45V @ 628A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1200V

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 180°C

R9G00618XX

Powerex Inc.

DIODE MODULE 600V 1800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存6,784

600V

1800A

1.2V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 600V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-SD1100C25L

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 910A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 910A
Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 2500V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -

封裝: B-43, PUK

庫存5,024

2500V

910A

1.44V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 2500V

-

Stud Mount

B-43, PUK

B-43, Hockey PUK

-

1N5831

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 25A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存3,776

35V

25A

580mV @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 20V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

VS-ETH3006STRRHM3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 30A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,896

600V

30A

2.65V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

30µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

MURS340-M3/57T

Vishay Semiconductor Diodes Division

DIODE RECT 3A 400V 50NS DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AB, SMC

庫存3,216

400V

3A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 400V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

ZHCS506QTA

Diodes Incorporated

DIODE SCHOTTKY 60V 500MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 630mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 40µA @ 45V
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,208

60V

500mA (DC)

630mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

40µA @ 45V

20pF @ 25V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

BYM12-300HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-213AB, MELF (Glass)

庫存5,808

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

14pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SR304HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-201AD, Axial

庫存3,824

40V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SS13L M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-219AB

庫存7,376

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

S2GA M2G

TSC America Inc.

DIODE, 1.5A, 400V, DO-214AC (SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存5,728

400V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 400V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

ES2B-TP

Micro Commercial Co

DIODE GEN PURP 100V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-214AC, SMA

庫存3,072

100V

2A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 150°C

IDH08G120C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存8,172

1200V

8A (DC)

1.95V @ 8A

No Recovery Time > 500mA (Io)

0ns

40µA @ 1200V

365pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

STPS20SM120STN

STMicroelectronics

DIODE SCHOTTKY 120V 20A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 210µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-3

庫存19,944

120V

20A

890mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

210µA @ 120V

-

Through Hole

TO-220-3

TO-220AB Narrow Leads

150°C (Max)

CUS05F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: -

封裝: SC-76, SOD-323

庫存100,086

30V

500mA

450mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

120pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

-

PMEG045V150EPDAZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 15A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19ns
Current - Reverse Leakage @ Vr: 900µA @ 15V
Capacitance @ Vr, F: 1870pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: -65°C ~ 175°C

封裝: 3-SMD, Flat Leads

庫存32,658

45V

15A

490mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

19ns

900µA @ 15V

1870pF @ 1V, 1MHz

Surface Mount

3-SMD, Flat Leads

CFP15

-65°C ~ 175°C

STTH108A

STMicroelectronics

DIODE GEN PURP 800V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: 175°C (Max)

封裝: DO-214AC, SMA

庫存966,816

800V

1A

1.65V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

175°C (Max)

GS1010FL_R1_00001

Panjit International Inc.

DIODE GEN PURP 1KV 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

庫存15,837

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

4pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-50°C ~ 150°C

JAN1N5621-TR

Microchip Technology

DIODE GEN PURP 800V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

800 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

500 nA @ 800 V

-

Through Hole

A, Axial

-65°C ~ 175°C

S2AB-HF

Comchip Technology

DIODE GP 50V 2A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

VS-15EVH06-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

600 V

15A

2.1 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

20 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

1N3595US-TR

Microchip Technology

DIODE GEN PURP 4A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

-

4A

1 V @ 200 mA

Standard Recovery >500ns, > 200mA (Io)

3 µs

1 nA @ 125 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

SGL34-60

Diotec Semiconductor

DIODE SCHOTTKY 60V 500MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

60 V

500mA

600 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-213AA

DO-213AA, MINI-MELF

-50°C ~ 150°C

AR1FKHM3-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A DO219AB

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

800 V

1A

1.6 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

120 ns

1 µA @ 800 V

9.3pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

ER1Q-LTP

Micro Commercial Co

DIODE GEN PURP 1.2KV 1A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

庫存6,537

1200 V

1A

1.85 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 1200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

JANTX1N5811US-TR

Microchip Technology

DIODE GEN PURP 150V 3A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

150 V

3A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

5 µA @ 150 V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C