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零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBR350RL	ON Semiconductor	DIODE SCHOTTKY 50V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存2,096	50V	3A	740mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 50V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 150°C
UMAF5817	Microsemi Corporation	DIODE SCHOTTKY 20V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	封裝: Ultramite?	庫存3,408	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
SET010204	Semtech Corporation	DIODE GEN PURP 400V 15A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封裝: Module	庫存3,072	400V	15A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Chassis, Stud Mount	Module	-	-55°C ~ 150°C
DZ540N22K	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE MOD 2000V 1150A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存2,288	-	-	-	-	-	-	-	-	-	-	-
S16DR	GeneSiC Semiconductor	DIODE GEN REV 200V 16A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-203AA, DO-4, Stud	庫存4,208	200V	16A	1.1V @ 16A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	-	-65°C ~ 175°C
UG8BT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2	庫存16,380	100V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
AS3PDHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2.1A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-277, 3-PowerDFN	庫存3,168	200V	2.1A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.2µs	10µA @ 200V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
STTH112UFY	STMicroelectronics	DIODE GEN PURP 1.2KV 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 175°C	封裝: DO-214AA, SMB	庫存2,208	1200V	1A	1.9V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1200V	-	Surface Mount	DO-214AA, SMB	SMB	-40°C ~ 175°C
MBR5200VPC-E1	Diodes Incorporated	DIODE SCHOTTKY 200V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存6,880	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-65°C ~ 150°C
VS-2EFH01-M3/I	Vishay Semiconductor Diodes Division	DIODE HF 100V 2A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-219AB	庫存3,536	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	2µA @ 100V	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-65°C ~ 175°C
MPG06KHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	封裝: MPG06, Axial	庫存3,904	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
RGP10G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存4,208	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
UF1AHA0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存4,624	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5393G A0G	TSC America Inc.	DIODE, 1.5A, 200V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AC, DO-15, Axial	庫存2,688	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CDBF0230R-HF	Comchip Technology	DIODE SCHOTTKY 30V 200MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	封裝: 1005 (2512 Metric)	庫存7,504	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
RS1J-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存1,308,240	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
JANTX1N3614	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: A, Axial	庫存7,792	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
SD2010S020S1R0	AVX Corporation	DIODE SCHOTTKY 20V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2010/DO-214AC Operating Temperature - Junction: -55°C ~ 125°C	封裝: 2-SMD, No Lead	庫存5,904	20V	1A (DC)	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	2-SMD, No Lead	2010/DO-214AC	-55°C ~ 125°C
RB520ZS-308EPT2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA GMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: GMD2 Operating Temperature - Junction: 150°C	封裝: -	Request a Quote	30 V	100mA	460 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 10 V	-	Surface Mount	0201 (0603 Metric)	GMD2	150°C
LL4148R13	Diotec Semiconductor	DIODE SOD-80 100V 0.15A 4NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C Operating Temperature - Junction: -50°C ~ 175°C	封裝: -	庫存22,791	75 V	150mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80C	-50°C ~ 175°C
MBRB10H60HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	60 V	10A	710 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
SS2040HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存1,770	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	300pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SBT10100-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	100 V	10A	790 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 µA @ 100 V	-	Through Hole	TO-220-2	TO-220AC	-50°C ~ 150°C
RS3JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存9,000	600 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SMD315PL-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	100 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	65pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
1N1201RA	Solid State Inc.	DIODE GEN PURP REV 150V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	150 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
MBRB8100-TP-HF	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	100 V	8A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
1N1586	Solid State Inc.	DIODE GEN PURP 500V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	500 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

MBR350RL

ON Semiconductor

DIODE SCHOTTKY 50V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存2,096

50V

3A

740mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 50V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 150°C

UMAF5817

Microsemi Corporation

DIODE SCHOTTKY 20V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

封裝: Ultramite?

庫存3,408

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

SET010204

Semtech Corporation

DIODE GEN PURP 400V 15A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Module

庫存3,072

400V

15A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

Chassis, Stud Mount

Module

-

-55°C ~ 150°C

DZ540N22K

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 2000V 1150A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存2,288

-

S16DR

GeneSiC Semiconductor

DIODE GEN REV 200V 16A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-203AA, DO-4, Stud

庫存4,208

200V

16A

1.1V @ 16A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-65°C ~ 175°C

UG8BT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

庫存16,380

100V

8A

1V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 100V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

AS3PDHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-277, 3-PowerDFN

庫存3,168

200V

2.1A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.2µs

10µA @ 200V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

STTH112UFY

STMicroelectronics

DIODE GEN PURP 1.2KV 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 175°C

封裝: DO-214AA, SMB

庫存2,208

1200V

1A

1.9V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1200V

-

Surface Mount

DO-214AA, SMB

SMB

-40°C ~ 175°C

MBR5200VPC-E1

Diodes Incorporated

DIODE SCHOTTKY 200V 5A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存6,880

200V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

-65°C ~ 150°C

VS-2EFH01-M3/I

Vishay Semiconductor Diodes Division

DIODE HF 100V 2A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-219AB

庫存3,536

100V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

2µA @ 100V

-

Surface Mount

DO-219AB

DO-219AB (SMF)

-65°C ~ 175°C

MPG06KHE3_A/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

封裝: MPG06, Axial

庫存3,904

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 800V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

RGP10G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存4,208

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

UF1AHA0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存4,624

50V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N5393G A0G

TSC America Inc.

DIODE, 1.5A, 200V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AC, DO-15, Axial

庫存2,688

200V

1.5A

1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

CDBF0230R-HF

Comchip Technology

DIODE SCHOTTKY 30V 200MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

封裝: 1005 (2512 Metric)

庫存7,504

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

RS1J-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存1,308,240

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

7pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

JANTX1N3614

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: A, Axial

庫存7,792

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

SD2010S020S1R0

AVX Corporation

DIODE SCHOTTKY 20V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2010/DO-214AC
Operating Temperature - Junction: -55°C ~ 125°C

封裝: 2-SMD, No Lead

庫存5,904

20V

1A (DC)

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

2-SMD, No Lead

2010/DO-214AC

-55°C ~ 125°C

RB520ZS-308EPT2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA GMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C

封裝: -

Request a Quote

30 V

100mA

460 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

300 nA @ 10 V

-

Surface Mount

0201 (0603 Metric)

GMD2

150°C

LL4148R13

Diotec Semiconductor

DIODE SOD-80 100V 0.15A 4NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

庫存22,791

75 V

150mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80C

-50°C ~ 175°C

MBRB10H60HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

60 V

10A

710 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

SS2040HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 2A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存1,770

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

300pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

SBT10100-3G

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

100 V

10A

790 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

4 µA @ 100 V

-

Through Hole

TO-220-2

TO-220AC

-50°C ~ 150°C

RS3JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存9,000

600 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

10 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SMD315PL-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

100 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

65pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

1N1201RA

Solid State Inc.

DIODE GEN PURP REV 150V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

150 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

MBRB8100-TP-HF

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

100 V

8A

850 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

1N1586

Solid State Inc.

DIODE GEN PURP 500V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

500 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C