圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 2A DO204AL
|
封裝: DO-204AL, DO-41, Axial |
庫存4,544 |
|
1300V | 2A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
||
Semtech Corporation |
DIODE GEN PURP 45KV 50MA AXIAL
|
封裝: Axial |
庫存6,736 |
|
45000V | 50mA | 60V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 1µA @ 45000V | - | Through Hole | Axial | - | -55°C ~ 150°C |
||
Semtech Corporation |
DIODE GEN PURP 15KV 400MA MODULE
|
封裝: Module |
庫存4,992 |
|
15000V | 400mA | 20V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 2µA @ 15000V | - | Through Hole | Module | - | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A DO203AA
|
封裝: DO-203AA, DO-4, Stud |
庫存3,856 |
|
600V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 1
|
封裝: DO-201AD, Axial |
庫存4,224 |
|
150V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,024 |
|
20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURPOSE 50V DO41
|
封裝: DO-204AC, DO-15, Axial |
庫存6,320 |
|
50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-41 | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.2A,
|
封裝: 1005 (2512 Metric) |
庫存2,352 |
|
40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
||
Comchip Technology |
DIODE SCHOTTKY 30V 350MA 0603
|
封裝: 2-SMD, No Lead |
庫存7,664 |
|
30V | 350mA | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 6.4ns | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603 (1608 Metric) | 125°C (Max) |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.2A,
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存7,808 |
|
30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323
|
封裝: SC-76, SOD-323 |
庫存7,088 |
|
30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
||
Micro Commercial Co |
DIODE GEN PURP 800V 3A DO201AD
|
封裝: DO-201AD, Axial |
庫存15,378 |
|
800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 20V 1A SMB
|
封裝: DO-214AA, SMB |
庫存1,224,180 |
|
20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 85V 150MA SOD923
|
封裝: SOD-923 |
庫存5,936 |
|
85V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923 | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 20V 5A SMC
|
封裝: DO-214AB, SMC |
庫存654,036 |
|
20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 40V 1A SOD123
|
封裝: - |
Request a Quote |
|
40 V | 1A | 510 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
20A, 45V, TRENCH SCHOTTKY
|
封裝: - |
Request a Quote |
|
45 V | 20A | 650 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 2600pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) | -55°C ~ 150°C |
||
Rohm Semiconductor |
30V 5A, TO-252, ULTRA LOW IR SBD
|
封裝: - |
庫存7,500 |
|
30 V | 5A | 720 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 30 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | 175°C |
||
Vishay |
SWITCHING DIODE GENPURP SOD123
|
封裝: - |
Request a Quote |
|
75 V | 250mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 µA @ 100 V | - | Surface Mount | SOD-123 | SOD-123 | 150°C |
||
Microchip Technology |
UFR,FRR
|
封裝: - |
Request a Quote |
|
150 V | 1.3A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | Surface Mount | SQ-MELF, E | E-MELF | -65°C ~ 155°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 10A R-6
|
封裝: - |
Request a Quote |
|
100 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | - | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
||
Renesas Electronics Corporation |
RECTIFIER DIODE, SCHOTTKY
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
DIODE SCHOTTKY 40V 1A POWERMITE
|
封裝: - |
Request a Quote |
|
40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
||
Micro Commercial Co |
Interface
|
封裝: - |
Request a Quote |
|
100 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO214AC
|
封裝: - |
Request a Quote |
|
1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 1000 V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.6KV 65A TO247AD
|
封裝: - |
庫存21 |
|
1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
封裝: - |
Request a Quote |
|
300 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GENERAL PURPOSE TO220
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |