頁 1776 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6392	Microsemi Corporation	DIODE SCHOTTKY 45V 54A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-203AB, DO-5, Stud	庫存6,640	45V	54A	680mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	3000pF @ 5V, 1MHz	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 175°C
D6020L55	Littelfuse Inc.	DIODE GEN PURP 600V 12.7A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12.7A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab, Formed Leads Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	封裝: TO-220-3 Isolated Tab, Formed Leads	庫存3,536	600V	12.7A	1.6V @ 12.7A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 600V	-	Through Hole	TO-220-3 Isolated Tab, Formed Leads	TO-220 Isolated Tab	-40°C ~ 125°C
RS3J-13	Diodes Incorporated	DIODE GEN PURP 600V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AB, SMC	庫存5,152	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
MA3X152K0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA MINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 150°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存214,512	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1	150°C (Max)
SET010211	Semtech Corporation	DIODE GEN PURP 150V 15A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封裝: Module	庫存3,792	150V	15A	1.1V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Chassis, Stud Mount	Module	-	-55°C ~ 150°C
SK12H60 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 12A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 700mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 200°C (Max)	封裝: DO-201AD, Axial	庫存3,296	60V	12A	700mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
CMR1U-04 BK	Central Semiconductor Corp	DIODE GEN PURP 400V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AA, SMB	庫存3,952	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
STPS2L30UF	STMicroelectronics	DIODE SCHOTTKY 30V 2A SMBFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBflat Operating Temperature - Junction: 150°C (Max)	封裝: DO-221AA, SMB Flat Leads	庫存39,432	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBflat	150°C (Max)
SR005HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存5,968	50V	500mA	700mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
IMBD4448-G3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,744	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
2833880	Phoenix Contact	DIODE MODULE W/VARISTOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Pluggable into DIN Rail Base Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	封裝: Module	庫存4,160	-	-	-	-	-	-	-	Pluggable into DIN Rail Base	Module	Module	-
EGL41B-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-213AB, MELF (Glass)	庫存3,776	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SCS206AJHRTLL	Rohm Semiconductor	DIODE SIL CARB 650V 6A TO263AB Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 600 V Capacitance @ Vr, F: 219pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max)	封裝: -	庫存8,328	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
S1JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存40,800	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
A115DX11	Harris Corporation	DIODE 400V 3A Diode Type: - Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 µs Current - Reverse Leakage @ Vr: 2 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	400 V	3A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	150 µs	2 µA @ 400 V	40pF @ 4V, 1MHz	Through Hole	-	-	-65°C ~ 175°C
SL16PE-TP	Micro Commercial Co	MOSFET Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 42pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	60 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	42pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323HE	-55°C ~ 150°C
JANTX1N6640-TR	Microchip Technology	DIODE GEN PURP 50V 300MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: D, Axial Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Through Hole	D, Axial	D-5D	-65°C ~ 175°C
W2624NC240	IXYS	DIODE GEN PURP 2.4KV 2624A W5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400 V Current - Average Rectified (Io): 2624A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: W5 Operating Temperature - Junction: -	封裝: -	Request a Quote	2400 V	2624A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Clamp On	DO-200AC, K-PUK	W5	-
DSC06A065	Diodes Incorporated	SILICON CARBIDE RECTIFIER TO220A Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 272pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存138	650 V	6A	1.5 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	272pF @ 100mV, 1MHz	Through Hole	TO-220-2	TO220AC (Type WX)	-55°C ~ 175°C
ES5DC	MDD	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	200 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N4255SM	Microchip Technology	DIODE GP 2KV 250MA S SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 2000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, S Supplier Device Package: S, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	2000 V	250mA	3.5 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 2000 V	-	Surface Mount	SQ-MELF, S	S, SQ-MELF	-65°C ~ 175°C
SURD109-4T4	onsemi	REC DPAK SPECIAL ULTFST Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GF3045TS-S1	SMC Diode Solutions	TRENCH SCHOTTKY MODULE 45V 30A G Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存180	-	-	-	-	-	-	-	-	-	-	-
RFN3BM6SFHTL	Rohm Semiconductor	DIODE GEN PURP 600V 3A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存7,488	600 V	3A	1.55 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	150°C (Max)
S4210IL	Microchip Technology	DIODE GEN PURP 100V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	100 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
BAS70HE3-TP	Micro Commercial Co	DIODE SCHOTTKY 70V 70MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 70 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C	封裝: -	庫存13,356	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 70 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
SF58G-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	600 V	5A	1.75 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
S10GC-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存12,219	400 V	10A	1.1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

JANTX1N6392

Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 54A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-203AB, DO-5, Stud

庫存6,640

45V

54A

680mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

3000pF @ 5V, 1MHz

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 175°C

D6020L55

Littelfuse Inc.

DIODE GEN PURP 600V 12.7A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12.7A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab, Formed Leads
Supplier Device Package: TO-220 Isolated Tab
Operating Temperature - Junction: -40°C ~ 125°C

封裝: TO-220-3 Isolated Tab, Formed Leads

庫存3,536

600V

12.7A

1.6V @ 12.7A

Standard Recovery >500ns, > 200mA (Io)

4µs

10µA @ 600V

-

Through Hole

TO-220-3 Isolated Tab, Formed Leads

TO-220 Isolated Tab

-40°C ~ 125°C

RS3J-13

Diodes Incorporated

DIODE GEN PURP 600V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AB, SMC

庫存5,152

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

MA3X152K0L

Panasonic Electronic Components

DIODE GEN PURP 80V 100MA MINI3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存214,512

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

150°C (Max)

SET010211

Semtech Corporation

DIODE GEN PURP 150V 15A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Module

庫存3,792

150V

15A

1.1V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

-

Chassis, Stud Mount

Module

-

-55°C ~ 150°C

SK12H60 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 200°C (Max)

封裝: DO-201AD, Axial

庫存3,296

60V

12A

700mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

120µA @ 60V

-

Through Hole

DO-201AD, Axial

DO-201AD

200°C (Max)

CMR1U-04 BK

Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

庫存3,952

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

STPS2L30UF

STMicroelectronics

DIODE SCHOTTKY 30V 2A SMBFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)

封裝: DO-221AA, SMB Flat Leads

庫存39,432

30V

2A

450mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBflat

150°C (Max)

SR005HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存5,968

50V

500mA

700mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

80pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

IMBD4448-G3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,744

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 70V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

2833880

Phoenix Contact

DIODE MODULE W/VARISTOR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Pluggable into DIN Rail Base
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

封裝: Module

庫存4,160

-

Pluggable into DIN Rail Base

Module

-

EGL41B-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-213AB, MELF (Glass)

庫存3,776

100V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SCS206AJHRTLL

Rohm Semiconductor

DIODE SIL CARB 650V 6A TO263AB

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)

封裝: -

庫存8,328

650 V

6A

1.55 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

120 µA @ 600 V

219pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB

175°C (Max)

S1JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存40,800

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

A115DX11

Harris Corporation

DIODE 400V 3A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 µs
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

400 V

3A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

150 µs

2 µA @ 400 V

40pF @ 4V, 1MHz

Through Hole

-

-65°C ~ 175°C

SL16PE-TP

Micro Commercial Co

MOSFET

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

60 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

42pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323HE

-55°C ~ 150°C

JANTX1N6640-TR

Microchip Technology

DIODE GEN PURP 50V 300MA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: D, Axial
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

50 V

300mA

1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

100 nA @ 50 V

-

Through Hole

D, Axial

D-5D

-65°C ~ 175°C

W2624NC240

IXYS

DIODE GEN PURP 2.4KV 2624A W5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400 V
Current - Average Rectified (Io): 2624A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: W5
Operating Temperature - Junction: -

封裝: -

Request a Quote

2400 V

2624A

-

Standard Recovery >500ns, > 200mA (Io)

-

Clamp On

DO-200AC, K-PUK

W5

-

DSC06A065

Diodes Incorporated

SILICON CARBIDE RECTIFIER TO220A

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 272pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存138

650 V

6A

1.5 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 650 V

272pF @ 100mV, 1MHz

Through Hole

TO-220-2

TO220AC (Type WX)

-55°C ~ 175°C

ES5DC

MDD

DIODE GEN PURP 200V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

200 V

5A

1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

1N4255SM

Microchip Technology

DIODE GP 2KV 250MA S SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 2000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, S
Supplier Device Package: S, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

2000 V

250mA

3.5 V @ 100 mA

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 2000 V

-

Surface Mount

SQ-MELF, S

S, SQ-MELF

-65°C ~ 175°C

SURD109-4T4

onsemi

REC DPAK SPECIAL ULTFST

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

GF3045TS-S1

SMC Diode Solutions

TRENCH SCHOTTKY MODULE 45V 30A G

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存180

-

RFN3BM6SFHTL

Rohm Semiconductor

DIODE GEN PURP 600V 3A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存7,488

600 V

3A

1.55 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

150°C (Max)

S4210IL

Microchip Technology

DIODE GEN PURP 100V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

100 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

BAS70HE3-TP

Micro Commercial Co

DIODE SCHOTTKY 70V 70MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

庫存13,356

70 V

70mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

200 nA @ 70 V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 125°C

SF58G-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

600 V

5A

1.75 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

S10GC-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存12,219

400 V

10A

1.1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C