頁 177 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDK10G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.7mA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,312	650V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	1.7mA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
RJU3052SDPD-E0#J2	Renesas Electronics America	DIODE GEN PURP 360V 20A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 360V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 1µA @ 360V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存3,584	360V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	1µA @ 360V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
GP10B-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存4,928	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 100V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RA201436XX	Powerex Inc.	DIODE MODULE 1.4KV 3600A PWRDISC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 3600A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 22µs Current - Reverse Leakage @ Vr: 200mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: Pow-R-Disc Operating Temperature - Junction: -	封裝: DO-200AD	庫存7,248	1400V	3600A	1.15V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	22µs	200mA @ 1400V	-	Chassis Mount	DO-200AD	Pow-R-Disc	-
GKN240/18	GeneSiC Semiconductor	DIODE GP 1.8KV 165A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 22mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-205AB, DO-9, Stud	庫存5,152	1800V	165A	1.5V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	22mA @ 1800V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-55°C ~ 150°C
1N6631US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 4µA @ 1100V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存5,696	1100V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
MBR7545	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-203AB, DO-5, Stud	庫存4,608	45V	75A	650mV @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
S70YR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.6KV 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AB, DO-5, Stud	庫存4,176	1600V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
1N3893	GeneSiC Semiconductor	DIODE GEN PURP 600V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存4,112	600V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
VS-100BGQ045HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 100A POWERTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 770mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: PowerTab? Supplier Device Package: PowerTab? Operating Temperature - Junction: -55°C ~ 150°C	封裝: PowerTab?	庫存3,248	45V	100A	770mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	2700pF @ 5V, 1MHz	Through Hole	PowerTab?	PowerTab?	-55°C ~ 150°C
VS-10TQ045-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A TO-220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-220-2	庫存3,792	45V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
SFT17GHR0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: T-18, Axial	庫存7,424	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N5817 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-204AL, DO-41, Axial	庫存7,104	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SS1FL4-M3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO-219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 115pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-219AB	庫存5,760	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	115pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
1N8032-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 2.5A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 274pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	封裝: TO-257-3	庫存5,232	650V	2.5A	1.3V @ 2.5A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	274pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
UFM13PL-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	封裝: SOD-123F	庫存120,000	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
STPS20SM120ST	STMicroelectronics	DIODE SCHOTTKY 170V 1A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 890mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5µA @ 170V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C	封裝: TO-220-3	庫存7,200	170V	1A	890mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5µA @ 170V	-	Through Hole	TO-220-3	TO-220AB	-65°C ~ 150°C
PMEG1030EH,115	Nexperia USA Inc.	DIODE SCHOTTKY 10V 3A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 10V Capacitance @ Vr, F: 85pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max)	封裝: SOD-123F	庫存26,880	10V	3A (DC)	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 10V	85pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C (Max)
US1DE-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A SMAE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMAE Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAE	-50°C ~ 150°C
S8G-M3-I	Vishay	8A, 400V, STD RECT, SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	400 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 400 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
DFD05TJ-BT	onsemi	RECTIFIER DIODE, 0.5A, 800V V(RR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
TRS6E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 6A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 70 µA @ 650 V Capacitance @ Vr, F: 392pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	封裝: -	庫存1,200	650 V	6A	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
BAV16W-EVL-CT	Venkel	Rectifier,SOD-123,75V,150mA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	75 V	150mA	855 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	-	-55°C ~ 150°C
15SQ045-3G	Diotec Semiconductor	SCHOTTKY D5.4X7.5 45V 15A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	45 V	15A	530 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 45 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
1F1G-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	12pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-55°C ~ 150°C
SS1H6LS	Taiwan Semiconductor Corporation	1A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 60 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
VS-20TQ035SHM3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 35V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	35 V	20A	570 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7 mA @ 35 V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
12F120	Solid State Inc.	DIODE GEN PURP 1.2KV 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	1200 V	12A	1.2 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C

IDK10G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.7mA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,312

650V

10A (DC)

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

1.7mA @ 650V

300pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

RJU3052SDPD-E0#J2

Renesas Electronics America

DIODE GEN PURP 360V 20A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 360V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1µA @ 360V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,584

360V

20A

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

1µA @ 360V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

GP10B-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存4,928

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 100V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RA201436XX

Powerex Inc.

DIODE MODULE 1.4KV 3600A PWRDISC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 3600A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22µs
Current - Reverse Leakage @ Vr: 200mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: Pow-R-Disc
Operating Temperature - Junction: -

封裝: DO-200AD

庫存7,248

1400V

3600A

1.15V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

22µs

200mA @ 1400V

-

Chassis Mount

DO-200AD

Pow-R-Disc

-

GKN240/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 22mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-205AB, DO-9, Stud

庫存5,152

1800V

165A

1.5V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

22mA @ 1800V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-55°C ~ 150°C

1N6631US

Microsemi Corporation

DIODE GEN PURP 1.1KV 1.4A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存5,696

1100V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

4µA @ 1100V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

MBR7545

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-203AB, DO-5, Stud

庫存4,608

45V

75A

650mV @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

S70YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AB, DO-5, Stud

庫存4,176

1600V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

1N3893

GeneSiC Semiconductor

DIODE GEN PURP 600V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存4,112

600V

12A

1.4V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

VS-100BGQ045HF4

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 100A POWERTAB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: PowerTab?
Supplier Device Package: PowerTab?
Operating Temperature - Junction: -55°C ~ 150°C

封裝: PowerTab?

庫存3,248

45V

100A

770mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

2700pF @ 5V, 1MHz

Through Hole

PowerTab?

-55°C ~ 150°C

VS-10TQ045-N3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO-220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-220-2

庫存3,792

45V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

SFT17GHR0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 500V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: T-18, Axial

庫存7,424

500V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 500V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

1N5817 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-204AL, DO-41, Axial

庫存7,104

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

55pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

SS1FL4-M3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO-219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

庫存5,760

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

115pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

1N8032-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 2.5A TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 274pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

封裝: TO-257-3

庫存5,232

650V

2.5A

1.3V @ 2.5A

No Recovery Time > 500mA (Io)

0ns

5µA @ 650V

274pF @ 1V, 1MHz

Through Hole

TO-257-3

TO-257

-55°C ~ 250°C

UFM13PL-TP

Micro Commercial Co

DIODE GEN PURP 200V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SOD-123F

庫存120,000

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

20pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

STPS20SM120ST

STMicroelectronics

DIODE SCHOTTKY 170V 1A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5µA @ 170V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-3

庫存7,200

170V

1A

890mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5µA @ 170V

-

Through Hole

TO-220-3

TO-220AB

-65°C ~ 150°C

PMEG1030EH,115

Nexperia USA Inc.

DIODE SCHOTTKY 10V 3A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 10V
Capacitance @ Vr, F: 85pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)

封裝: SOD-123F

庫存26,880

10V

3A (DC)

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 10V

85pF @ 1V, 1MHz

Surface Mount

SOD-123F

150°C (Max)

US1DE-TP

Micro Commercial Co

DIODE GEN PURP 200V 1A SMAE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMAE
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 200 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMAE

-50°C ~ 150°C

S8G-M3-I

Vishay

8A, 400V, STD RECT, SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

400 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 400 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

DFD05TJ-BT

onsemi

RECTIFIER DIODE, 0.5A, 800V V(RR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

TRS6E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 6A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

封裝: -

庫存1,200

650 V

6A

1.35 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

70 µA @ 650 V

392pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C

BAV16W-EVL-CT

Venkel

Rectifier,SOD-123,75V,150mA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

75 V

150mA

855 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

6 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

-

-55°C ~ 150°C

15SQ045-3G

Diotec Semiconductor

SCHOTTKY D5.4X7.5 45V 15A 150C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

45 V

15A

530 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 45 V

-

Through Hole

P600, Axial

P600

-50°C ~ 150°C

1F1G-TP

Micro Commercial Co

DIODE GEN PURP 50V 1A R-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-1, Axial
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

12pF @ 4V, 1MHz

Through Hole

R-1, Axial

R-1

-55°C ~ 150°C

SS1H6LS

Taiwan Semiconductor Corporation

1A, 60V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

60 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 µA @ 60 V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

VS-20TQ035SHM3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 20A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

35 V

20A

570 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.7 mA @ 35 V

1400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

12F120

Solid State Inc.

DIODE GEN PURP 1.2KV 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

1200 V

12A

1.2 V @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C