頁 1728 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GI851-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-201AD, Axial	庫存2,720	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
6TQ045STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,600	45V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-SD1700C30K	Vishay Semiconductor Diodes Division	DIODE MODULE 3KV 2080A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000V Current - Average Rectified (Io): 2080A Voltage - Forward (Vf) (Max) @ If: 1.81V @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75mA @ 3000V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	封裝: DO-200AC, K-PUK	庫存7,680	3000V	2080A	1.81V @ 4000A	Standard Recovery >500ns, > 200mA (Io)	-	75mA @ 3000V	-	Clamp On	DO-200AC, K-PUK	DO-200AC, K-PUK	-
VS-SD700C30L	Vishay Semiconductor Diodes Division	DIODE MODULE 3KV 700A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000V Current - Average Rectified (Io): 700A Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 3000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存3,232	3000V	700A	1.66V @ 1000A	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 3000V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-303URA160	Vishay Semiconductor Diodes Division	DIODE GP 1.6KV 330A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	封裝: DO-205AB, DO-9, Stud	庫存7,184	1600V	330A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
R7S01012XX	Powerex Inc.	DIODE MODULE 1KV 1200A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	封裝: DO-200AA, A-PUK	庫存5,040	1000V	1200A	1.6V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 1000V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
SFAF1002GHC0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack	庫存4,368	100V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
EGL41CHE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-213AB, MELF (Glass)	庫存4,400	150V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYG22B-M3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 2A DO214AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存7,376	100V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FR303G A0G	TSC America Inc.	DIODE, FAST, 3A, 200V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存2,128	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS24-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AC, SMA	庫存18,084	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
1N4448WSQ-7-F	Diodes Incorporated	DIODE FAST REC 75V 0.25A SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	封裝: SC-76, SOD-323	庫存3,952	75V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
HS18140	Microsemi Corporation	DIODE MODULE 40V 180A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 700mV @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 40V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封裝: HALF-PAK	庫存5,184	40V	180A	700mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 40V	7500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
240NQ045-1	SMC Diode Solutions	PIV 45V IO 240A VF 0 61V PACKAGE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 610mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 45V Capacitance @ Vr, F: 10300pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 150°C	封裝: HALF-PAK	庫存4,528	45V	-	610mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 45V	10300pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
RFN1L7STE25	Rohm Semiconductor	DIODE GEN PURP 700V 800MA PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 1µA @ 700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	封裝: DO-214AC, SMA	庫存87,636	700V	800mA	1.5V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	80ns	1µA @ 700V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
SK310A-LTP	Micro Commercial Co	DIODE SCHOTTKY 100V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 125°C	封裝: DO-214AC, SMA	庫存1,046,982	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 125°C
STTH15RQ06GY-TR	STMicroelectronics	DIODE GEN PURP 600V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	庫存87	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
SIT08C065	Diotec Semiconductor	SiC Schottky, TO-220AC, 650V, 8A Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -50°C ~ 175°C	封裝: -	庫存3,000	650 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	Through Hole	TO-220-2	TO-220AC	-50°C ~ 175°C
S1B-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	封裝: -	Request a Quote	100 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
ER3DA_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存2,400	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
ER306_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存1,251	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
NTE585	NTE Electronics, Inc	DIODE SCHOTTKY 40V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封裝: -	Request a Quote	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
UF306G_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANTX1N6874UTK2AS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAS21-HF	Comchip Technology	DIODE GP 250V 400MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	封裝: -	庫存123,870	250 V	400mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
RB050LA-50TR	Rohm Semiconductor	DIODE SCHOTTKY 50V 3A PMDT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FR606GP-TP	Micro Commercial Co	DIODE GEN PURP 800V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	800 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 800 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
STPSC10H12G2Y-TR	STMicroelectronics	DIODE SIL CARB 1.2KV 10A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 1200 V Capacitance @ Vr, F: 725pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK HV Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	庫存2,616	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK HV	-40°C ~ 175°C

GI851-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-201AD, Axial

庫存2,720

100V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 100V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

6TQ045STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,600

45V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

VS-SD1700C30K

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 2080A DO200AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000V
Current - Average Rectified (Io): 2080A
Voltage - Forward (Vf) (Max) @ If: 1.81V @ 4000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75mA @ 3000V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -

封裝: DO-200AC, K-PUK

庫存7,680

3000V

2080A

1.81V @ 4000A

Standard Recovery >500ns, > 200mA (Io)

-

75mA @ 3000V

-

Clamp On

DO-200AC, K-PUK

-

VS-SD700C30L

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 700A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000V
Current - Average Rectified (Io): 700A
Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50mA @ 3000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存3,232

3000V

700A

1.66V @ 1000A

Standard Recovery >500ns, > 200mA (Io)

-

50mA @ 3000V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-303URA160

Vishay Semiconductor Diodes Division

DIODE GP 1.6KV 330A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

封裝: DO-205AB, DO-9, Stud

庫存7,184

1600V

330A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

R7S01012XX

Powerex Inc.

DIODE MODULE 1KV 1200A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1200A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

封裝: DO-200AA, A-PUK

庫存5,040

1000V

1200A

1.6V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

10µs

50mA @ 1000V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

SFAF1002GHC0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack

庫存4,368

100V

10A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

170pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

EGL41CHE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-213AB, MELF (Glass)

庫存4,400

150V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYG22B-M3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A DO214AC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存7,376

100V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

FR303G A0G

TSC America Inc.

DIODE, FAST, 3A, 200V, 150NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存2,128

200V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SS24-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AC, SMA

庫存18,084

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

1N4448WSQ-7-F

Diodes Incorporated

DIODE FAST REC 75V 0.25A SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SC-76, SOD-323

庫存3,952

75V

250mA

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

HS18140

Microsemi Corporation

DIODE MODULE 40V 180A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 180A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 40V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封裝: HALF-PAK

庫存5,184

40V

180A

700mV @ 180A

Fast Recovery =< 500ns, > 200mA (Io)

-

4mA @ 40V

7500pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

240NQ045-1

SMC Diode Solutions

PIV 45V IO 240A VF 0 61V PACKAGE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 610mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 45V
Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: HALF-PAK

庫存4,528

45V

-

610mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

20mA @ 45V

10300pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 150°C

RFN1L7STE25

Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 1µA @ 700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

封裝: DO-214AC, SMA

庫存87,636

700V

800mA

1.5V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

80ns

1µA @ 700V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

SK310A-LTP

Micro Commercial Co

DIODE SCHOTTKY 100V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 125°C

封裝: DO-214AC, SMA

庫存1,046,982

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

250pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 125°C

STTH15RQ06GY-TR

STMicroelectronics

DIODE GEN PURP 600V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

庫存87

600 V

15A

2.95 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

20 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

SIT08C065

Diotec Semiconductor

SiC Schottky, TO-220AC, 650V, 8A

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

庫存3,000

650 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 650 V

-

Through Hole

TO-220-2

TO-220AC

-50°C ~ 175°C

S1B-AQ

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

Request a Quote

100 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

ER3DA_R1_00001

Panjit International Inc.

DIODE GEN PURP 200V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存2,400

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

ER306_R2_00001

Panjit International Inc.

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存1,251

600 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 600 V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

NTE585

NTE Electronics, Inc

DIODE SCHOTTKY 40V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封裝: -

Request a Quote

40 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

UF306G_R2_00001

Panjit International Inc.

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

600 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 600 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

JANTX1N6874UTK2AS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

BAS21-HF

Comchip Technology

DIODE GP 250V 400MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C

封裝: -

庫存123,870

250 V

400mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C

RB050LA-50TR

Rohm Semiconductor

DIODE SCHOTTKY 50V 3A PMDT

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

FR606GP-TP

Micro Commercial Co

DIODE GEN PURP 800V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

800 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 800 V

150pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

STPSC10H12G2Y-TR

STMicroelectronics

DIODE SIL CARB 1.2KV 10A D2PAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

庫存2,616

1200 V

10A

1.5 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 1200 V

725pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK HV

-40°C ~ 175°C