頁 1687 - 二極體 - 整流器 - 單 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 887
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

二極體 - 整流器 - 單

記錄 52,788
頁  1,687/1,886
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAS 70-02W E6327
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: SC-80
庫存6,480
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
-55°C ~ 125°C
VS-21DQ06TB
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO204A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存7,760
60V
2A
750mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
120pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL
-40°C ~ 150°C
FGP20CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AC, DO-15, Axial
庫存3,776
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
45pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
IRD3909R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 30A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350ns
  • Current - Reverse Leakage @ Vr: 80µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存3,648
50V
30A
1.8V @ 62.8A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
80µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
hot VS-19TQ015STRLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 19A 15V D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 19A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 19A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10.5mA @ 15V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存17,136
15V
19A
360mV @ 19A
Fast Recovery =< 500ns, > 200mA (Io)
-
10.5mA @ 15V
2000pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 125°C
VB20120SG-M3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 120V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,528
120V
20A
1.33V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 120V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
SSC53LHE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AB, SMC
庫存7,392
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 150°C
GP10ME-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存5,888
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1000V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
RGL34K-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-213AA (Glass)
庫存4,528
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
HS3J R7G
TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存5,984
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
RS07J-M-18
Vishay Semiconductor Diodes Division

DIODE SW 600V DO219-M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-219AB
庫存5,184
600V
500mA
1.15V @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
RS1B-M3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存5,760
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot SL23-E3/52T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-214AA, SMB
庫存1,236,852
30V
2A
440mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
hot RS3KB-13-F
Diodes Incorporated

DIODE GEN PURP 800V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AA, SMB
庫存1,257,828
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
1N4935G
ON Semiconductor

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存92,790
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
DB2W60400L
Panasonic Electronic Components

DIODE SCHOTTKY 60V 2A MINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12ns
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 38pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: Mini2-F3-B
  • Operating Temperature - Junction: 150°C (Max)
封裝: SOD-123F
庫存593,856
60V
2A
660mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
12ns
300µA @ 60V
38pF @ 10V, 1MHz
Surface Mount
SOD-123F
Mini2-F3-B
150°C (Max)
SS3040HE_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 3A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 160 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存52,641
40 V
3A
520 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
160 µA @ 40 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
JANTX1N6662-TR
Microchip Technology

DIODE GEN PURP 400V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 nA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
400 V
500mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
50 nA @ 400 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
MURS360T3H
onsemi

DIODE GEN PURP 600V 4A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
600 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
RB520CS-30-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
  • Operating Temperature - Junction: 125°C
封裝: -
Request a Quote
30 V
100mA
450 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 10 V
-
Surface Mount
SOD-923
SOD-923
125°C
S504140
Microchip Technology

DIODE GP 1.4KV 300A DO205AB DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
1400 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 1400 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
BAT54HE3-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
庫存8,370
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 125°C
RB751V-40-TP-HF
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: 2pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C
封裝: -
Request a Quote
30 V
30mA
370 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 30 V
2pF @ 1V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C
1N1347R
Solid State Inc.

DIODE GEN PURP REV 500V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
500 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 500 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
RBS3LAM40CTR
Rohm Semiconductor

DIODE SCHOTTKY 20V 3A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 125°C
封裝: -
庫存12,117
20 V
3A
400 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
800 µA @ 20 V
-
Surface Mount
SOD-128
PMDTM
125°C
S4320D
Microchip Technology

DIODE GEN PURP 200V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
200 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 200 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
BYWB29-200HE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
200 V
8A
1.3 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 150°C
SB160S
Diotec Semiconductor

SCHOTTKY DO41 60V 1A 150C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-41, Axial
  • Supplier Device Package: DO-204AC (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: -
Request a Quote
60 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 60 V
-
Through Hole
DO-204AC, DO-41, Axial
DO-204AC (DO-41)
-50°C ~ 150°C