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二極體 - 整流器 - 單

記錄 52,788
頁  1,653/1,886
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製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N6631U
Microsemi Corporation

DIODE GEN PURP 1KV 1.4A E-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 4µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: SQ-MELF, E
庫存2,720
1000V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
4µA @ 1000V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
1N4007GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存3,424
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1000V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
VS-16FLR40S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 16A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-203AA, DO-4, Stud
庫存3,872
400V
16A
1.4V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
50µA @ 400V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
VS-HFA04SD60SL-M3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,248
600V
4A
1.8V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-65°C ~ 175°C
BYV13-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A SOD57

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: SOD-57, Axial
庫存2,464
400V
1.5A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 400V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
LSR102 L0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: DO-213AB, MELF
庫存2,544
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
1N4007GPE-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存2,560
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1000V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
S5DCTR
SMC Diode Solutions

DIODE GEN PURP 200V 5A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AB, SMC
庫存5,696
200V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-65°C ~ 150°C
1N4007GHR1G
TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, DO-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存2,592
-
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HS1J R3G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AC, SMA
庫存4,368
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK5150AFL-TP
Micro Commercial Co

DIODE SCHOTTKY 150V 5A DO221AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 870mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-221AC, SMA Flat Leads
庫存6,624
150V
5A
870mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 150V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
hot DSEP29-06A
IXYS

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.61V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-220-2
庫存6,276
600V
30A
1.61V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
250µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SBR2A40P1Q-7
Diodes Incorporated

DIODE SBR 40V 2A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: POWERDI?123
庫存87,678
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
1N2137
Solid State Inc.

DIODE GEN PURP 500V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
500 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 500 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
V10P103-M3-I
Vishay

10A, 100V, SMPC TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450 µA @ 100 V
  • Capacitance @ Vr, F: 1600pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存19,500
100 V
10A
670 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
450 µA @ 100 V
1600pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V10PWM45HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
45 V
10A
590 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
1900pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
WNSC04650T6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A 5DFN

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 650 V
  • Capacitance @ Vr, F: 141pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 5-DFN (8x8)
  • Operating Temperature - Junction: 175°C (Max)
封裝: -
Request a Quote
650 V
4A
1.7 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
25 µA @ 650 V
141pF @ 1V, 1MHz
Surface Mount
4-VSFN Exposed Pad
5-DFN (8x8)
175°C (Max)
SFAS804G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存4,800
200 V
8A
950 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
80pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
EP05Q04
KYOCERA AVX

DIODE SCHOTTKY 40V 500MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
40 V
500mA
510 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SOD-123
SOD-123
-40°C ~ 150°C
SF38G-TP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
600 V
3A
1.75 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
ACGRTS4003-HF
Comchip Technology

DIODE GP 200V 1A TS/SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: TS/SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
200 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
6pF @ 4V, 1MHz
Surface Mount
SOD-123F
TS/SOD-123FL
-55°C ~ 150°C
SK54-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 40V 5A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 240pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存6,024
40 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
240pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
1SS82TD-E
Renesas Electronics Corporation

DIODE 200V 200MA DO35

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: -
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 200 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C
封裝: -
Request a Quote
200 V
200mA
1 V @ 100 mA
-
100 ns
200 nA @ 200 V
1.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C
HBL2080RP
onsemi

SINGLE CHANNEL 80V ESD PROTECTOR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
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SS23H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
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30 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 30 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
UF4005G
SMC Diode Solutions

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 600 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
S3A_R1_00001
Panjit International Inc.

DIODE GEN PURP 50V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: 53pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存2,370
50 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 50 V
53pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
PMEG200G20ELPX
Nexperia USA Inc.

DIODE SIGE 200V 2A SOD128/CFP5

  • Diode Type: SiGe (Silicon Germanium)
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32 ns
  • Current - Reverse Leakage @ Vr: 30 nA @ 200 V
  • Capacitance @ Vr, F: 58pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 175°C
封裝: -
庫存12,666
200 V
2A
880 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
32 ns
30 nA @ 200 V
58pF @ 1V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
175°C