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SDT10S60

Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 350µA @ 600V
• Capacitance @ Vr, F: 350pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

MURS240T3

ON Semiconductor

DIODE GEN PURP 400V 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

FESF8JTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack, Isolated Tab

VBT1045BP-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 45V TO-263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

UPS120E/TR7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Capacitance @ Vr, F: 80pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-216AA

S15GC M6G

TSC America Inc.

DIODE, 15A, 400V, DO-214AB (SMC)

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 93pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

1N5822 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-201AD, Axial

SK32AHM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

CDBQR0140L-HF

Comchip Technology

DIODE SCHOTTKY 40V 100MA 0402

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Capacitance @ Vr, F: 6pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402/SOD-923F
• Operating Temperature - Junction: 125°C (Max)

封裝: 0402 (1005 Metric)

ES1JLHM2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-219AB

CD1408-F1800

Bourns Inc.

DIODE GEN PURP 800V 1A 1408

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Chip, Concave Terminals
• Supplier Device Package: 1408
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: Chip, Concave Terminals

SS14LWHRVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123W

SE10DG-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A TO263AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 15µA @ 400V
• Capacitance @ Vr, F: 67pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
• Supplier Device Package: TO-263AC (SMPD)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab) Variant

VS-T110HF100

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 110A D-55

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 110A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• Supplier Device Package: D-55
• Operating Temperature - Junction: -

封裝: D-55 T-Module

BAT750-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 750MA SOT23-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 750mA
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 750mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 100µA @ 30V
• Capacitance @ Vr, F: 175pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: TO-236-3, SC-59, SOT-23-3

VS-MUR820PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-220-2

STTH2R02AFY

STMicroelectronics

DIODE UFAST 200V 2A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.02V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 800nA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: SOD-128

1N2066

Solid State Inc.

DIODE GEN PURP 800V 275A DO9

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 275A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

封裝: -

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BY550-100

Diotec Semiconductor

DIODE D5.4X7.5 100V 5A 175C

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201
• Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

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AOGF20D65L1L

Alpha & Omega Semiconductor Inc.

LINEAR IC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 104 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

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DTH8L06DNC-13

Diodes Incorporated

DIODE GP 600V 8A TO252 T&R 2.5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 70 ns
• Current - Reverse Leakage @ Vr: 8 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (Type WX)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

VS-3EYH02-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A SLIMSMAW

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 16pF @ 200V
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SlimSMAW (DO-221AD)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

VSSAF5M103HM3-I

Vishay

5A, 100V, SLIM SMA TRENCH SKY RE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2.4A
• Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 140 µA @ 100 V
• Capacitance @ Vr, F: 570pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SlimSMA)
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

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SB120A-T

Diodes Incorporated

DIODE SCHOTTKY DO41

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

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UT267

Microchip Technology

DIODE GEN PURP 600V 2A A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

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RS1MFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

CDLL2810E3

Microchip Technology

DIODE SCHOTTKY 50V 75MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 75mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 nA @ 15 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

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SD125SC150B-T2

SMC Diode Solutions

DIODE SCHOTTKY 150V 15A DIE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 150 V
• Capacitance @ Vr, F: 500pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 200°C

封裝: -

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