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R6101030XXYZ

Powerex Inc.

DIODE GEN PURP 1KV 300A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 13µs
• Current - Reverse Leakage @ Vr: 50mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

封裝: DO-205AB, DO-9, Stud

BY229-600,127

NXP

DIODE GEN PURP 500V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 135ns
• Current - Reverse Leakage @ Vr: 400µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

FYPF0545STU

Fairchild/ON Semiconductor

DIODE SCHOTTKY 45V 5A TO220F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220F-2L
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-2 Full Pack

LSM115J

Microsemi Corporation

DIODE SCHOTTKY 15V 1A DO214BA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 15V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 15V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214BA
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

18TQ045S

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 18A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

A170PE

Powerex Inc.

DIODE GEN PURP 1.5KV 100A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1500V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

封裝: DO-205AA, DO-8, Stud

JAN1N3646

Microsemi Corporation

DIODE GP 1.75KV 250MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1750V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1750V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: S, Axial
• Supplier Device Package: S, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: S, Axial

NTS10100EMFST3G

ON Semiconductor

DIODE SCHOTTKY 100V 10A 5DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 70µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: 8-PowerTDFN, 5 Leads

MUR420 B0G

TSC America Inc.

DIODE, ULTRA FAST, 4A, 200V, 25N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-201AD, Axial

U3C-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

SS36-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 60V DO-214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

MURS140-M3/52T

Vishay Semiconductor Diodes Division

DIODE RECT 1A 400V 50NS DO-214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

S1G-M3/61T

Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V DO-214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

ESH1GM RSG

TSC America Inc.

DIODE, ULTRA FAST, 1A, 400V, 25N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 3pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: Micro SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: 2-SMD, Flat Lead

PMEG3005ELD,315

Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD882D

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 30pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: 2-DFN1006D (0.6x1.0)
• Operating Temperature - Junction: 150°C (Max)

封裝: 2-XDFN

1N6392

Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 54A
• Voltage - Forward (Vf) (Max) @ If: 820mV @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-203AB, DO-5, Stud

S110FP

Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 1A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 100V
• Capacitance @ Vr, F: 32pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123H

PMEG2005ET,215

Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)
• Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

1N3494

Solid State Inc.

DIODE GP 300V 25A PRESS FIT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 57 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 300 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: PRESS FIT
• Supplier Device Package: Press Fit
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

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MUR6040B-BP

Micro Commercial Co

DIODE GEN PURP 400V 60A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

TUAU10DH

Taiwan Semiconductor Corporation

50NS, 10A, 200V, HIGH EFFICIENT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 135pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

TUAU10GH

Taiwan Semiconductor Corporation

50NS, 10A, 400V, HIGH EFFICIENT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 135pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

JANS1N5811URS-TR

Microchip Technology

UFR,FRR

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 150 V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

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FFSH4065BDN-F085

onsemi

DIODE SIL CARB 650V 20A TO247-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Capacitance @ Vr, F: 866pF @ 1V, 100kHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

MBR1060F-BP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

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1N459A_L99Z

onsemi

DIODE GEN PURP 200V 500MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25 nA @ 175 V
• Capacitance @ Vr, F: 6pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

封裝: -

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1N645-TR

Microchip Technology

DIODE GP REV 225V 400MA DO35

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 225 V
• Current - Average Rectified (Io): 400mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 nA @ 225 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-204AH (DO-35)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

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JAN1N6080

Semtech Corporation

DIODE GEN PURP 100V 5A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 230pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

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