圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 150V 2A AXIAL
|
封裝: A, Axial |
庫存3,152 |
|
150V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB
|
封裝: DO-214AB, SMC |
庫存3,504 |
|
400V | 3A | 1.45V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -65°C ~ 175°C |
||
IXYS |
DIODE MODULE 4.8KV 10.2A UGE
|
封裝: UGE |
庫存4,688 |
|
4800V | 10.2A | 4.8V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 4800V | - | Chassis Mount | UGE | UGE | - |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 8A TO263AB
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存4,544 |
|
500V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 500V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO263AB
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,040 |
|
50V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存3,472 |
|
35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存4,320 |
|
60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 650V DIE
|
封裝: Die |
庫存2,096 |
|
650V | - | 1.3V @ 20A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD
|
封裝: DO-201AD, Axial |
庫存7,888 |
|
150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Comchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC
|
封裝: DO-214AC, SMA |
庫存60,000 |
|
60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 125°C (Max) |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 50V, 35NS
|
封裝: DO-204AL, DO-41, Axial |
庫存2,016 |
|
50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 1A, 600V, 200NS, DO
|
封裝: DO-204AL, DO-41, Axial |
庫存6,288 |
|
600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 4A, 600V,
|
封裝: DO-214AB, SMC |
庫存4,464 |
|
600V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 85A DO203AB
|
封裝: DO-203AB, DO-5, Stud |
庫存6,864 |
|
1600V | 85A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
||
Microchip Technology |
RECTIFIER
|
封裝: - |
Request a Quote |
|
1000 V | 125A | 1.2 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1000 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
||
Microchip Technology |
DIODE GEN PURP 600V 70A DO5
|
封裝: - |
Request a Quote |
|
600 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
||
Microchip Technology |
STD RECTIFIER
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Solid State Inc. |
DIODE GEN PURP 1.2KV 60A DO5
|
封裝: - |
Request a Quote |
|
1200 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1200 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
||
Panjit International Inc. |
DIODE GEN PURP 100V 200MA SOT23
|
封裝: - |
庫存9,768 |
|
100 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
||
Solid State Inc. |
DIODE GEN PURP REV 12A DO4
|
封裝: - |
Request a Quote |
|
- | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 200V 8A TO263AB
|
封裝: - |
Request a Quote |
|
200 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 85pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GP 150V 3A SQ-MELF B
|
封裝: - |
Request a Quote |
|
150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Diotec Semiconductor |
DIODE SUPERFAST MINIMELF 600V
|
封裝: - |
Request a Quote |
|
600 V | 1A | 1.8 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 3 µA @ 600 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C |
||
Nexperia USA Inc. |
BAS516-Q/SOD523/SC-79
|
封裝: - |
Request a Quote |
|
100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 500 nA @ 80 V | 1pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD
|
封裝: - |
Request a Quote |
|
400 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 75V 150MA SOD123
|
封裝: - |
Request a Quote |
|
75 V | 150mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 µA @ 100 V | 4pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C (Max) |
||
onsemi |
DIODE SCHOTTKY 100V 3A SMC
|
封裝: - |
Request a Quote |
|
100 V | 3A | 900 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
||
Microchip Technology |
DIODE SCHOTTKY 15V 25A THINKEY2
|
封裝: - |
Request a Quote |
|
15 V | 25A | 520 mV @ 25 A | No Recovery Time > 500mA (Io) | - | 1.2 mA @ 15 V | 2000pF @ 5V, 1MHz | Surface Mount | ThinKey™2 | ThinKey™2 | -65°C ~ 150°C |