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二極體 - 整流器 - 單

記錄 52,788
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N6623U
Microsemi Corporation

DIODE GEN PURP 800V 1A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: SQ-MELF, A
庫存3,536
800V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 800V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
hot SB340A-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-201AD, Axial
庫存2,242,572
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
MR756RL
ON Semiconductor

DIODE GP 600V 6A MICRODE BUTTON

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Button, Axial
  • Supplier Device Package: Microde Button
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: Button, Axial
庫存3,488
600V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 600V
-
Through Hole
Button, Axial
Microde Button
-65°C ~ 175°C
LL4154-7
Diodes Incorporated

DIODE GEN 25V 150MA MINI MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-213AC, MINI-MELF, SOD-80
庫存7,312
25V
150mA
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 25V
-
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
-65°C ~ 175°C
VS-10ETF02STRLPBF
Vishay Semiconductor Diodes Division

DIODE RECT 200V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,944
200V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
100µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
MBR760HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-220-2
庫存5,632
60V
7.5A
750mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MUR440GP-TP
Micro Commercial Co

DIODE GEN PURP 400V DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-201AD, Axial
庫存3,184
400V
4A
1.35V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RS3B-M3/57T
Vishay Semiconductor Diodes Division

DIODE SW 3A 100V 150NS DO-214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存6,112
100V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot B1100-13-F
Diodes Incorporated

DIODE SCHOTTKY 100V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AC, SMA
庫存1,685,244
100V
1A
790mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
hot US1J-13-F
Diodes Incorporated

DIODE GEN PURP 600V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AC, SMA
庫存824,556
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
PMEG2020CER-QX
Nexperia USA Inc.

20 V, 2 A SCHOTTKY RECTIFIER IN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.5 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 20 V
  • Capacitance @ Vr, F: 145pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C
封裝: -
Request a Quote
20 V
2A
520 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
5.5 ns
50 µA @ 20 V
145pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C
10A07H
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 1KV 10A D6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: D-6, Axial
  • Supplier Device Package: D6
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
1000 V
10A
1 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
80pF @ 4V, 1MHz
Through Hole
D-6, Axial
D6
-65°C ~ 150°C
1N2062R
Solid State Inc.

DIODE GEN PURP REV 450V 275A DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 450 V
  • Current - Average Rectified (Io): 275A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 450 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
封裝: -
Request a Quote
450 V
275A
1.3 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 450 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-9
-65°C ~ 190°C
SS210LWH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存78,690
100 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 100 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
HSM2838CTR
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
FR205GA-G
Comchip Technology

DIODE GEN PURP 600V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
HSU119-91TRF-E
Renesas Electronics Corporation

SCHOTTKY BARRIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
GS1DHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
200 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYC75W-1200PQ
WeEn Semiconductors

DIODE GEN PURP 1.2KV 75A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)
封裝: -
Request a Quote
1200 V
75A
-
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
250 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247-2
175°C (Max)
R504140
Microchip Technology

DIODE GP REV 1.4KV 300A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
Request a Quote
1400 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 1400 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
SS3150B
MDD

DIODE SCHOTTKY 150V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 150 V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
150 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 150 V
400pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
V6PWM45-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 6A SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 45 V
  • Capacitance @ Vr, F: 990pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存5,892
45 V
6A
580 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 45 V
990pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
MMSD4148-D87Z-FS
Fairchild Semiconductor

DIODE GEN PURP 100V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
RURU15040RA
Harris Corporation

150A, 400V ULTRAFAST DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SK315
SMC Diode Solutions

DIODE SCHOTTKY 150V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 150 V
  • Capacitance @ Vr, F: 100pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
150 V
3A
890 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 150 V
100pF @ 5V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
UJ3D06520KSD
Qorvo

DIODE SIL CARB 650V 10A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 654pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 650 V
654pF @ 1V, 1MHz
Through Hole
TO-247-3
TO-247-3
-55°C ~ 175°C
UF4006G
SMC Diode Solutions

DIODE GEN PURP 800V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
JAN1N6630-TR
Microchip Technology

DIODE GEN PURP 900V 1.4A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900 V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: E, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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900 V
1.4A
1.4 V @ 1.4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
2 µA @ 900 V
-
Through Hole
E, Axial
-
-65°C ~ 150°C