頁 1044 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
AS4PDHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-277, 3-PowerDFN	庫存6,704	200V	2.4A (DC)	962mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
DSR8U600	Diodes Incorporated	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封裝: TO-220-2	庫存125,364	600V	8A	2.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	28ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
MA2J1130GL	Panasonic Electronic Components	DIODE GEN PURP 80V 200MA SMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SMini2-F3 Operating Temperature - Junction: 150°C (Max)	封裝: SC-90, SOD-323F	庫存103,476	80V	200mA	1.1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	10ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SMini2-F3	150°C (Max)
241NQ045R	Vishay Semiconductor Diodes Division	DIODE MODULE 45V 240A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 690mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 45V Capacitance @ Vr, F: 10300pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封裝: D-67 HALF-PAK	庫存3,456	45V	240A	690mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 45V	10300pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
1N3269R	Powerex Inc.	DIODE GEN PURP 600V 160A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 160A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-205AB, DO-9, Stud	庫存2,368	600V	160A	-	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
JAN1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: A, Axial	庫存2,464	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
MBRF7150HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 7.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack	庫存6,592	150V	7.5A	1.02V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SDM1M40LP8Q-7	Diodes Incorporated	SCHOTTKY RECTIFIER U-DFN1608-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 660mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4ns Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C	封裝: 2-UFDFN	庫存6,400	40V	1A	660mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	8.4ns	20µA @ 40V	25pF @ 5V, 1MHz	Surface Mount	2-UFDFN	U-DFN1608-2	-65°C ~ 150°C
CDBF0340-HF	Comchip Technology	DIODE SCHOTTKY 40V 350MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6.4ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	封裝: 1005 (2512 Metric)	庫存2,992	40V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	6.4ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SR104 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-204AL, DO-41, Axial	庫存6,224	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N4007GHB0G	TSC America Inc.	DIODE, 1A, 1000V, AEC-Q101, DO-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存2,480	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SK18TR	SMC Diode Solutions	DIODE SCHOTTKY 80V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80A Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AA, SMB	庫存2,656	80V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80A	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
TST20H120CW C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 20A, 12 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-3	庫存5,168	120V	10A	900mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
NRVBS3200T3G	ON Semiconductor	DIODE SCHOTTKY 200V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AA, SMB	庫存31,548	200V	3A	840mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
RB081L-20TE25	Rohm Semiconductor	DIODE SCHOTTKY 20V 5A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max)	封裝: DO-214AC, SMA	庫存5,952	20V	5A	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 20V	-	Surface Mount	DO-214AC, SMA	PMDS	125°C (Max)
STPS30M120SR	STMicroelectronics	DIODE SCHOTTKY 120V 30A I2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 275µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: I2PAK Operating Temperature - Junction: 150°C (Max)	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存21,576	120V	30A	900mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	275µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	I2PAK	150°C (Max)
S1D-13-F	Diodes Incorporated	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-214AC, SMA	庫存626,196	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
SF2005PT	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存2,700	300 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 300 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
HS2GALH	Taiwan Semiconductor Corporation	50NS, 2A, 400V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存42,000	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	25pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
RS1K_R1_00001	Panjit International Inc.	DIODE GEN PURP 800V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存16,170	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 800 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
NRVTSM260EV2T3G	onsemi	DIODE SCHOTTKY 60V 2A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	60 V	2A	650 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	12 µA @ 60 V	-	Surface Mount	DO-216AA	Powermite	-65°C ~ 175°C
S5GHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存25,173	400 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER308G-AP	Micro Commercial Co	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	1000 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N1436R	Solid State Inc.	DIODE GEN PURP REV 200V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
SB36AFC-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存17,700	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	125pF @ 0V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
SR109H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	90 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT42LS-QYL	Nexperia USA Inc.	DIODE SCHOTTKY 40V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2 Operating Temperature - Junction: 150°C	封裝: -	庫存30,000	40 V	200mA	600 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	20pF @ 1V, 1MHz	Surface Mount	SOD-882	DFN1006BD-2	150°C
RS5GC-HF	Comchip Technology	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	400 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

AS4PDHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.4A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-277, 3-PowerDFN

庫存6,704

200V

2.4A (DC)

962mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

DSR8U600

Diodes Incorporated

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-220-2

庫存125,364

600V

8A

2.5V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

28ns

20µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

MA2J1130GL

Panasonic Electronic Components

DIODE GEN PURP 80V 200MA SMINI2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SMini2-F3
Operating Temperature - Junction: 150°C (Max)

封裝: SC-90, SOD-323F

庫存103,476

80V

200mA

1.1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

10ns

500nA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SMini2-F3

150°C (Max)

241NQ045R

Vishay Semiconductor Diodes Division

DIODE MODULE 45V 240A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 45V
Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封裝: D-67 HALF-PAK

庫存3,456

45V

240A

690mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

20mA @ 45V

10300pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

HALF-PAK

-

1N3269R

Powerex Inc.

DIODE GEN PURP 600V 160A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 160A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-205AB, DO-9, Stud

庫存2,368

600V

160A

-

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 175°C

JAN1N5615

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: A, Axial

庫存2,464

200V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

MBRF7150HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 7.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack

庫存6,592

150V

7.5A

1.02V @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SDM1M40LP8Q-7

Diodes Incorporated

SCHOTTKY RECTIFIER U-DFN1608-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4ns
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C

封裝: 2-UFDFN

庫存6,400

40V

1A

660mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

8.4ns

20µA @ 40V

25pF @ 5V, 1MHz

Surface Mount

2-UFDFN

U-DFN1608-2

-65°C ~ 150°C

CDBF0340-HF

Comchip Technology

DIODE SCHOTTKY 40V 350MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.4ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

封裝: 1005 (2512 Metric)

庫存2,992

40V

350mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

6.4ns

5µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

SR104 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-204AL, DO-41, Axial

庫存6,224

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

1N4007GHB0G

TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, DO-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存2,480

-

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SK18TR

SMC Diode Solutions

DIODE SCHOTTKY 80V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 80A
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AA, SMB

庫存2,656

80V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 80A

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 125°C

TST20H120CW C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 20A, 12

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-3

庫存5,168

120V

10A

900mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

庫存31,548

200V

3A

840mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 200V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

RB081L-20TE25

Rohm Semiconductor

DIODE SCHOTTKY 20V 5A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)

封裝: DO-214AC, SMA

庫存5,952

20V

5A

450mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 20V

-

Surface Mount

DO-214AC, SMA

PMDS

125°C (Max)

STPS30M120SR

STMicroelectronics

DIODE SCHOTTKY 120V 30A I2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 275µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存21,576

120V

30A

900mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

275µA @ 120V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

I2PAK

150°C (Max)

S1D-13-F

Diodes Incorporated

DIODE GEN PURP 200V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AC, SMA

庫存626,196

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

SF2005PT

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 20A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存2,700

300 V

20A

1.5 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 300 V

175pF @ 4V, 1MHz

Through Hole

TO-247-3

TO-247AD (TO-3P)

-55°C ~ 150°C

HS2GALH

Taiwan Semiconductor Corporation

50NS, 2A, 400V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存42,000

400 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 400 V

25pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

RS1K_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存16,170

800 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

1 µA @ 800 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

NRVTSM260EV2T3G

onsemi

DIODE SCHOTTKY 60V 2A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

60 V

2A

650 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

12 µA @ 60 V

-

Surface Mount

DO-216AA

Powermite

-65°C ~ 175°C

S5GHM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存25,173

400 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

10 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

HER308G-AP

Micro Commercial Co

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

1000 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 1000 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N1436R

Solid State Inc.

DIODE GEN PURP REV 200V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

SB36AFC-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMAF-C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存17,700

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

125pF @ 0V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C

SR109H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

90 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 90 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

BAT42LS-QYL

Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C

封裝: -

庫存30,000

40 V

200mA

600 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

20pF @ 1V, 1MHz

Surface Mount

SOD-882

DFN1006BD-2

150°C

RS5GC-HF

Comchip Technology

DIODE GEN PURP 400V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

400 V

5A

1.3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C