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二極體 - 整流器 - 單

記錄 52,788
頁  1,024/1,886
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4006GPE-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存7,648
-
-
-
-
-
-
-
-
-
-
-
VS-1EFH02WHM3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A SMF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 16ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: SMF (DO-219AB)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-219AB
庫存5,440
200V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
16ns
2µA @ 200V
-
Surface Mount
DO-219AB
SMF (DO-219AB)
-65°C ~ 175°C
SRP600D-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 125°C
封裝: P600, Axial
庫存7,552
200V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Through Hole
P600, Axial
P600
-50°C ~ 125°C
ESH1PAHE3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: DO-220AA
庫存6,768
50V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
JANTXV1N6642UBCC
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: 3-SMD, No Lead
庫存3,296
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
-65°C ~ 175°C
BYV30B-600PJ
WeEn Semiconductors

BYV30B-600PJ TO263

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存3,760
-
-
-
-
-
-
-
-
-
-
-
CMR1U-04M BK
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-214AC, SMA
庫存5,440
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
BYV29X-500,127
WeEn Semiconductors

DIODE GEN PURP 500V 9A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 50µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
封裝: TO-220-2 Full Pack, Isolated Tab
庫存4,640
500V
9A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
50µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
CD214B-F2400
Bourns Inc.

DIODE GEN PURP 400V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-214AA, SMB
庫存4,944
400V
2A
1.25V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SE20PBHM3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.6A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: DO-220AA
庫存7,312
100V
1.6A
1.05V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
5µA @ 100V
13pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
hot JANTX1N4946
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: A, Axial
庫存6,944
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 600V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
LS4448GS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 8ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
  • Operating Temperature - Junction: 175°C (Max)
封裝: SOD-80 Variant
庫存99,366
100V
300mA
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
8ns
25nA @ 20V
4pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
175°C (Max)
CDBA140SL-HF
Comchip Technology

DIODE SCHOTTKY 40V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 330mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 100°C
封裝: DO-214AC, SMA
庫存226,122
40V
1.4A (DC)
330mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
160pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 100°C
CR40-080
Central Semiconductor Corp

DIODE GEN PURP 800V 40A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
800 V
40A
1.1 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 800 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-
SR545L-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 45 V
  • Capacitance @ Vr, F: 320pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
45 V
5A
490 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 45 V
320pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RBLQ10RSM10TFTL1
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 10A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
100 V
10A
670 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
SF3008PTH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 30A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存2,064
600 V
30A
1.7 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 600 V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
BA158BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
600 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 600 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
10A05
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 600V 10A D6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: D-6, Axial
  • Supplier Device Package: D6
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
600 V
10A
1 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
80pF @ 4V, 1MHz
Through Hole
D-6, Axial
D6
-65°C ~ 150°C
PMEG100T10ELXDX
Nexperia USA Inc.

DIODE SCHOTTKY 100V 1A SOD323HP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 100 V
  • Capacitance @ Vr, F: 95pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SOD323HP
  • Operating Temperature - Junction: 175°C
封裝: -
庫存124,122
100 V
1A
795 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
6 ns
500 nA @ 100 V
95pF @ 1V, 1MHz
Surface Mount
2-SMD, Flat Lead
SOD323HP
175°C
FR303BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
200 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 200 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
15SQ045-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 200°C
封裝: -
Request a Quote
45 V
15A
480 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
-
Through Hole
R-6, Axial
R-6
-55°C ~ 200°C
US2DBFL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: -
Request a Quote
200 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-50°C ~ 150°C
JANTXV1N5416US-TR
Microchip Technology

DIODE GEN PURP 100V 3A D-5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
100 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 100 V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 175°C
V10P22HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 3.1A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3.1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 200 V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存20,253
200 V
3.1A
900 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 200 V
500pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
GS2AFL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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50 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 50 V
20pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
UF1006F_T0_00001
Panjit International Inc.

DIODE GEN PURP 600V 10A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存5,880
600 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 600 V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
1N4004T-R
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
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400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 400 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C