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二極體 - 整流器 - 單

記錄 52,788
頁  1,020/1,886
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC01D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 600MA WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 600mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 600mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: Die
庫存2,448
1200V
600mA (DC)
1.6V @ 600mA
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
RL104-N-0-2-BP
Micro Commercial Co

DIODE GEN PURP 400V 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial, Radial Bend
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: Axial, Radial Bend
庫存5,216
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
Axial, Radial Bend
A-405
-55°C ~ 150°C
USC1306
Semtech Corporation

DIODE GEN PURP 400V 5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 400V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: Axial
庫存5,184
400V
5A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 400V
90pF @ 10V, 1MHz
Through Hole
Axial
Axial
-55°C ~ 150°C
ES01FW
Sanken

DIODE GEN PURP 1.5KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: Axial
庫存4,128
1500V
500mA
2V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 1500V
-
Through Hole
Axial
-
-40°C ~ 150°C
HS2D R5G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AA, SMB
庫存4,528
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS1JLHR3G
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-219AB
庫存7,904
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RBR3LAM60BTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
封裝: SOD-128
庫存3,104
60V
3A
560mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
1N5552US
Microsemi Corporation

DIODE GEN PURP 600V 3A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: SQ-MELF, B
庫存7,616
600V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 600V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
SK86L-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存51,366
60V
8A
650mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
400pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
40CDQ040
Microchip Technology

DIODE SCHOTTKY 40V 30A TO204AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
40 V
30A
700 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 40 V
-
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
-65°C ~ 175°C
BAT201M3-RRG
Taiwan Semiconductor Corporation

1A, 20V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 290 mV @ 10 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 15 V
  • Capacitance @ Vr, F: 29pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
庫存50,217
20 V
1A
290 mV @ 10 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 15 V
29pF @ 5V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
-55°C ~ 125°C
RBR2MM60ATFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
庫存10,401
60 V
2A
650 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
75 µA @ 60 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
JANTXV1N3911A
Microchip Technology

DIODE GEN PURP 200V 50A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
200 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C
SFT15G
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A TS-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存14,925
300 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
10pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SR308-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 80 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
Request a Quote
80 V
3A
850 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 80 V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR308-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 80 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
Request a Quote
80 V
3A
850 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 80 V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SF11G-TP
Micro Commercial Co

DIODE GEN PURP 50V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
50 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
HER104-AP
Micro Commercial Co

DIODE GEN PURP 300V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 mA @ 300 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
Request a Quote
300 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 mA @ 300 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C
SD103CWS-7-F-79
Diodes Incorporated

DIODE SCHOTTKY 20V 350MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 10 V
  • Capacitance @ Vr, F: 28pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
20 V
350mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
10 ns
5 µA @ 10 V
28pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
RS2AA
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
50 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SE10DLJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.6A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 280 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存10,677
600 V
3.6A
1 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
280 ns
5 µA @ 600 V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SBA0830CS-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 30V 800MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
30 V
800mA
600 mV @ 800 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
-
Surface Mount
SC-90, SOD-323F
SOD-323
-55°C ~ 150°C
PUUP3BH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 47pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存17,970
100 V
3A
930 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 100 V
47pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SF38G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存7,500
600 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK23A
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存22,500
30 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UG1GPL-TP-HF
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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400 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
-
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
CMMR1-10-TR-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
庫存42,486
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
6pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
HER107G-AP
Micro Commercial Co

DIODE GEN PURP 800V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
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800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C