頁 90 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  90/271
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封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
92MT160KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1600V 90A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
封裝: MTK
庫存5,728
Standard
1600V
90A
-
-
-40°C ~ 125°C (TJ)
Chassis Mount
MTK
MTK
GBPC2504
Diodes Incorporated

RECT BRIDGE GPP 400V 25A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封裝: 4-Square, GBPC
庫存3,952
Standard
400V
25A
1.1V @ 12.5A
5µA @ 400V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
VBO88-08NO7
IXYS

DIODE BRIDGE 800V 95A ECO-PAC2

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 92A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
封裝: ECO-PAC2
庫存6,240
Standard
800V
92A
1.13V @ 50A
100µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
UC2610NG4
Texas Instruments

IC SCHOTTKY DIODE BRIDGE 8-DIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature: -25°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存5,184
Schottky
50V
1A
1.3V @ 1A
100µA @ 40V
-25°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
KBU3504-G
Comchip Technology

RECT BRIDGE CELL 400V 35A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: 4-SIP, KBU
庫存3,344
Standard
400V
35A
1.1V @ 17.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
BU20065S-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 20A BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
封裝: 4-SIP, BU-5S
庫存6,752
Standard
600V
3.5A
1.05V @ 10A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
BU2008-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 20A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
封裝: 4-SIP, BU
庫存2,224
Standard
800V
3.5A
1.05V @ 10A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GBJL2002-BP
Micro Commercial Co

20A GLASS PASSIVATED BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: 4-SIP, GBJ
庫存5,056
Standard
200V
20A
1.05V @ 10A
10µA @ 200V
-55°C ~ 150°C
Through Hole
4-SIP, GBJ
GBJ
DF01S-G
Comchip Technology

RECTIFIER BRIDGE 1.0A 100V DFS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
封裝: 4-SMD, Gull Wing
庫存4,928
Standard
100V
1A
1.1V @ 1A
10µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
GBU407 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存4,592
Standard
1000V
4A
1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot PB3508-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 35A PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
封裝: 4-SIP, PB
庫存5,536
Standard
800V
35A
1.1V @ 17.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
hot GBU6J
GeneSiC Semiconductor

DIODE BRIDGE 600V 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存8,460
Standard
600V
6A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
VS-36MB80A
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 35A D-34A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, D-34
  • Supplier Device Package: D-34
封裝: 4-Square, D-34
庫存4,192
Standard
800V
35A
-
10µA @ 800V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, D-34
D-34
CDBHD260-G
Comchip Technology

DIODE BRIDGE 2A 60V TO-269AA

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: Mini-Dip (TO-269AA)
封裝: TO-269AA, 4-BESOP
庫存67,920
Schottky
60V
2A
700mV @ 2A
500µA @ 60V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
Mini-Dip (TO-269AA)
GBPC5010L-BP
Micro Commercial Co

BRIDGE RECTIFIERS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封裝: -
Request a Quote
Standard
1 kV
50 A
1.1 V @ 25 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
RMB6S
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 500MA MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
封裝: -
庫存27,189
Standard
600 V
500 mA
1 V @ 2 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-BESOP (0.173", 4.40mm Width)
MBS
GBU15L08-BP
Micro Commercial Co

BRIDGE RECTIFIERS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
800 V
15 A
920 mV @ 7.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
VS-KBPC108
Vishay General Semiconductor - Diodes Division

BRIDGE RECTIFIER 800V 3.0A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-1
  • Supplier Device Package: KBPC1
封裝: -
庫存687
Standard
800 V
3 A
1.1 V @ 1.5 A
10 µA @ 800 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-1
KBPC1
MSCDC50H701AG
Microchip Technology

PM-DIODE-SIC-SBD-SP1F

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 700 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Current - Reverse Leakage @ Vr: 200 µA @ 700 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
庫存69
Silicon Carbide Schottky
700 V
50 A
1.8 V @ 50 A
200 µA @ 700 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
GBJ10M
GeneSiC Semiconductor

1000V 10A GBJ SINGLE PHASE BRIDG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: -
Request a Quote
Standard
1 kV
10 A
1.05 V @ 5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
RBV1008
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 10A 800V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
封裝: -
Request a Quote
Standard
800 V
10 A
1 V @ 5 A
10 µA @ 800 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
KBP308G
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
封裝: -
Request a Quote
Standard
800 V
1.8 A
1.1 V @ 3 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
CBR1-D060-PBFREE
Central Semiconductor Corp

BRIDGE RECT 1PHASE 600V 1A 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
封裝: -
庫存12,612
Standard
600 V
1 A
1.1 V @ 1 A
10 µA @ 600 V
-65°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
4-DIP
GBU6GL-6130E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 400V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
400 V
3.8 A
1 V @ 6 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4ML-5001E3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
1 kV
3 A
1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
MB14S
Good-Ark Semiconductor

BRIDGE RECTIFIER, SCHOTTKY, 1.0A

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
封裝: -
庫存13,488
Schottky
40 V
1 A
500 mV @ 1 A
500 µA @ 40 V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
GBU6JL-5305E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
600 V
3.8 A
1 V @ 6 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
TS4K60-A
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 4A TS4K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS4K
  • Supplier Device Package: TS4K
封裝: -
庫存8,871
Standard
600 V
4 A
1 V @ 2 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS4K
TS4K