頁 66 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  66/271
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零件編號
製造商
描述
封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MB1M-BP
Micro Commercial Co

DIODE BRIDGE GPP 0.5A MB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.200", 5.08mm)
  • Supplier Device Package: MB-1
封裝: 4-DIP (0.200", 5.08mm)
庫存7,936
Standard
100V
500mA
1V @ 400mA
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.200", 5.08mm)
MB-1
DBF250G
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
封裝: 4-SIP, DBF
庫存3,536
Standard
600V
3.5A
1.05V @ 700mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
VBO36-12NO8
IXYS

RECT BRIDGE 30A 1200V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-B
  • Supplier Device Package: FO-B
封裝: 4-Square, FO-B
庫存7,904
Standard
1200V
30A
1.7V @ 150A
300µA @ 1200V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-B
FO-B
BR35005-G
Comchip Technology

BRIDGE DIODE 35A 50V BR

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, BR
  • Supplier Device Package: BR
封裝: 4-Square, BR
庫存6,128
Standard
50V
35A
1.1V @ 12.5A
10µA @ 50V
-55°C ~ 125°C (TJ)
QC Terminal
4-Square, BR
BR
GBPC3510T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A GBPC-T

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封裝: 4-Square, GBPC
庫存7,520
Standard
1000V
35A
1.1V @ 17.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC
GBPC
TS20P05GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: 4-SIP, TS-6P
庫存2,240
Standard
600V
20A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU404HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存2,928
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6J-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存3,536
Standard
600V
6A
1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBL606G
GeneSiC Semiconductor

DIODE BRIDGE 600V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
封裝: 4-SIP, KBL
庫存3,568
Standard
600V
6A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
GBJ1001TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 10A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
封裝: 4-ESIP
庫存6,960
Standard
100V
10A
1.1V @ 10A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
BU1510-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 1000V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
封裝: 4-SIP, BU
庫存6,352
Standard
1000V
15A
1.05V @ 7.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
KBL005-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 50V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
封裝: 4-SIP, KBL
庫存2,976
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
GHXS045A120S-D1
Global Power Technologies Group

MOD SBD BRIDGE 1200V 45A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 45A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存5,152
Silicon Carbide Schottky
1200V
45A
1.7V @ 45A
300µA @ 1200V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
MSD75-08
Microsemi Corporation

DIODE BRIDGE 3PH 800V 75A SM2

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M2
  • Supplier Device Package: SM2
封裝: M2
庫存6,704
Standard
800V
75A
1.6V @ 150A
300µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
M2
SM2
GHXS030A060S-D1E
Global Power Technologies Group

MOD SBD BRIDGE 600V 30A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存4,336
Silicon Carbide Schottky
600V
30A
1.7V @ 30A
100µA @ 600V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
GBPC1501W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 15A 100V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存8,652
Standard
100V
15A
1.1V @ 7.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot KBL06-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 600V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
封裝: 4-SIP, KBL
庫存32,400
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
DB105STR
SMC Diode Solutions

BRIDGE RECT 1PHASE 600V 1A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
封裝: 4-SMD, Gull Wing
庫存57,798
Standard
600V
1A
1.1V @ 1A
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
DF06SA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 600V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
封裝: 4-SMD, Gull Wing
庫存21,762
Standard
600V
1A
1.1V @ 1A
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
KBJ610G-BP
Micro Commercial Co

DIODE BRIDGE 6A 1000V KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
封裝: 4-SIP, KBJ
庫存13,440
Standard
1000V
6A
1V @ 3A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
KBU3510-G
Comchip Technology

RECT BRIDGE CELL 1000V 35A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: 4-SIP, KBU
庫存20,232
Standard
1000V
35A
1.1V @ 17.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot DF10M
Diodes Incorporated

RECT BRIDGE GPP 1000V 1A DF-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
封裝: 4-EDIP (0.300", 7.62mm)
庫存166,068
Standard
1000V
1A
1.1V @ 1A
10µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
GBPC5012H-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封裝: -
Request a Quote
Standard
1.2 kV
50 A
1.1 V @ 25 A
5 µA @ 1200 V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
DF200AE80
SanRex Corporation

DIODE MODULE 800V 200A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 200 A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 200 A
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
Request a Quote
Standard
800 V
200 A
1.32 V @ 200 A
20 mA @ 800 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
GBJ25005-03-G
Comchip Technology

BRIDGE RECT 1PHASE 50V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: -
Request a Quote
Standard
50 V
25 A
1 V @ 12.5 A
10 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
NTE53016
NTE Electronics, Inc

R-BRIDGE 200V 50A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square
  • Supplier Device Package: -
封裝: -
Request a Quote
Standard
200 V
50 A
1.1 V @ 25 A
50 µA @ 200 V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square
-
SLMB4S-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: LMBS-1
封裝: -
Request a Quote
Standard
400 V
1 A
1.3 V @ 500 mA
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
LMBS-1
GBL206
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: -
庫存3,600
Standard
800 V
2 A
1 V @ 2 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL