頁 53 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  53/271
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製造商
描述
封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3N259
Fairchild/ON Semiconductor

RECTIFIER BRIDGE 1000V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
封裝: 4-SIP, KBPM
庫存3,744
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
111MT160KB
Vishay Semiconductor Diodes Division

RECT BRG 3PHA 1600V 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 20mA @ 1600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
封裝: MTK
庫存3,760
Standard
1600V
110A
-
20mA @ 1600V
-40°C ~ 125°C (TJ)
Chassis Mount
MTK
MTK
GBJ802
Diodes Incorporated

RECT BRIDGE GPP 200V 8A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: 4-SIP, GBJ
庫存2,864
Standard
200V
8A
1V @ 4A
5µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MSD100-16
Microsemi Corporation

DIODE BRIDGE 1600V 100A SM3

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3
  • Supplier Device Package: M3
封裝: M3
庫存5,776
Standard
1600V
100A
1.9V @ 300A
300µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
M3
M3
VUO68-08NO7
IXYS

RECT BRIDGE 3PH 800V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 68A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
封裝: ECO-PAC1
庫存2,352
Standard
800V
68A
1.5V @ 60A
40µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC1
ECO-PAC1
hot VUO25-18NO8
IXYS

RECT BRIDGE 3PH 25A 1800V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: PWS-E1
封裝: 5-Square, FO-B
庫存6,016
Standard
1800V
25A
2.2V @ 150A
300µA @ 1400V
-40°C ~ 150°C (TJ)
QC Terminal
5-Square, FO-B
PWS-E1
KBPC15005W
GeneSiC Semiconductor

DIODE BRIDGE 15A 50V 1PH KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
封裝: 4-Square, KBPC-W
庫存6,576
Standard
50V
15A
1.1V @ 7.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
GBU1501-G
Comchip Technology

RECTIFIER BRIDGE 15A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存7,024
Standard
100V
3.2A
1V @ 7.5A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6A-M3/45
Vishay Semiconductor Diodes Division

DIODE 6A 50V INLINE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3.8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存7,856
Standard
50V
3.8A
1V @ 6A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot KBU8K
GeneSiC Semiconductor

DIODE BRIDGE 800V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: 4-SIP, KBU
庫存29,268
Standard
800V
8A
1V @ 8A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
DBLS203GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封裝: 4-SMD, Gull Wing
庫存6,816
Standard
200V
2A
1.15V @ 2A
2µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
B380C800DM-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 600V DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
封裝: 4-EDIP (0.300", 7.62mm)
庫存6,960
Standard
600V
900mA
1V @ 900mA
10µA @ 600V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
VS-2KBB10R
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 100V 1.9A D-37

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, 2KBB
  • Supplier Device Package: 2KBB
封裝: 4-SIP, 2KBB
庫存4,688
Standard
100V
1.9A
-
-
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, 2KBB
2KBB
GBU10D
GeneSiC Semiconductor

DIODE BRIDGE 200V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存21,624
Standard
200V
10A
1.1V @ 10A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
RS407GL-BP
Micro Commercial Co

IC BRIDGE RECT GPP 4A 1000V RS4L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-4L
  • Supplier Device Package: RS-4L
封裝: 4-SIP, RS-4L
庫存7,456
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, RS-4L
RS-4L
CBRHDSH1-100 TR13
Central Semiconductor Corp

IC RECT BRIDGE 100V 1A HD DIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -50°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-HD DIP
封裝: 4-SMD, Gull Wing
庫存6,688
Schottky
100V
1A
750mV @ 1A
10µA @ 100V
-50°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-HD DIP
hot UC3610N
Texas Instruments

IC SCHOTTKY DIODE BRIDGE 8-DIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存42,576
Schottky
50V
3A
1.3V @ 1A
100µA @ 40V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
GBPC3504W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 35A 400V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存12,876
Standard
400V
35A
1.1V @ 17.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot MDB6S
Fairchild/ON Semiconductor

IC BRIDGE DIODE 600V 4-MICRODIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-MicroDIP/SMD
封裝: 4-SMD, Gull Wing
庫存54,048
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-MicroDIP/SMD
GBJA2510-BP
Micro Commercial Co

DIODE BRIDGE 25A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
封裝: -
Request a Quote
Standard
1 kV
25 A
1.05 V @ 12.5 A
10 µA @ 1000 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
GBU2006-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
600 V
20 A
1.1 V @ 10 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
MD200S16NM3-BP
Micro Commercial Co

DISCRETE SEMICONDUCTOR MODULES

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 200 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: NM3
封裝: -
Request a Quote
Standard
1.6 kV
200 A
1.7 V @ 300 A
500 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
NM3
GBU15005
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
50 V
15 A
1.1 V @ 15 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
NSR1030QMUTWG
onsemi

BRIDGE RECT 1PHASE 30V 1A 4UDFN

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 30 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 20 µA @ 30 V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-UDFN (3x3)
封裝: -
庫存29,331
Schottky
30 V
1 A
600 mV @ 1 A
20 µA @ 30 V
125°C (TJ)
Surface Mount
4-UDFN Exposed Pad
4-UDFN (3x3)
GBU1008LV_T0_00601
Panjit International Inc.

GBU PACKAGE, 10A/800V LOW VF BRI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU-2
封裝: -
庫存29,853
Standard
800 V
10 A
940 mV @ 5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU-2
MB2510-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB-35
  • Supplier Device Package: MB-35
封裝: -
Request a Quote
Standard
1 kV
25 A
1.1 V @ 12.5 A
10 µA @ 1000 V
-55°C ~ 150°C
QC Terminal
4-Square, MB-35
MB-35
GBL06L-5600E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DF30AA120
SanRex Corporation

DIOE MODULE 1200V 30A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
Request a Quote
Standard
1.2 kV
30 A
1.3 V @ 30 A
3 mA @ 1200 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-