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二極體 - 橋式整流器

記錄 7,565
頁  258/271
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製造商
描述
封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CBR6F-010
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,536
-
-
-
-
-
-
-
-
-
VJ848M
Microsemi Corporation

DIODE PWR MOD BRIDGE

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, VJ
  • Supplier Device Package: VJ
封裝: 4-Square, VJ
庫存4,832
Avalanche
800V
10A
1.3V @ 1A
5µA @ 800V
-55°C ~ 175°C (TJ)
Through Hole
4-Square, VJ
VJ
G3SBA60L-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存6,544
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBPC2501W
Diodes Incorporated

RECT BRIDGE GPP 100V 25A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存6,144
Standard
100V
25A
1.1V @ 12.5A
5µA @ 100V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
MB151-F
Diodes Incorporated

RECTIFIER BRIDGE 100V 15A MB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB
  • Supplier Device Package: MB
封裝: 4-Square, MB
庫存3,888
Standard
100V
15A
1.1V @ 7.5A
10µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, MB
MB
SBR2F
Semtech Corporation

BRIDGE RECT 1.5A 200V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,552
Standard
200V
1.5A
1.2V @ 1A
2µA @ 200V
-
Through Hole
-
-
GBPC25010T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封裝: 4-Square, GBPC
庫存7,520
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS10P02GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: 4-SIP, TS-6P
庫存3,456
Standard
100V
10A
1.1V @ 10A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
hot DF06S
Diodes Incorporated

RECT BRIDGE SMD 600V 1A 4P DF-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
封裝: 4-SMD, Gull Wing
庫存732,204
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
BU1210-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 12A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
封裝: 4-SIP, BU
庫存3,008
Standard
1000V
3.4A
1.05V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
B40C1500G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1.5A 65V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 65V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 65V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
封裝: 4-Circular, WOG
庫存2,528
Standard
65V
1.5A
1V @ 1.5A
10µA @ 65V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
hot MBL106S-M3/I
Vishay Semiconductor Diodes Division

RECT BRIDGE 1A 600V MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
封裝: 4-SMD, Gull Wing
庫存48,000
Standard
600V
1A
950mV @ 400mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
B4S-HF
Comchip Technology

DIODE BRIDGE 400V 0.8A MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS
封裝: TO-269AA, 4-BESOP
庫存3,072
Standard
400V
800mA
1.1V @ 800mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS
BU1006-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
封裝: 4-SIP, BU
庫存5,008
Standard
600V
10A
1.05V @ 5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
APTDR90X1601G
Microsemi Corporation

POWER MODULE DIODE 1600V 90A SP1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A
  • Current - Reverse Leakage @ Vr: 50µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封裝: SP1
庫存6,800
Standard
1600V
90A
1.3V @ 90A
50µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
GHXS030A060S-D1
Global Power Technologies Group

MOD SBD BRIDGE 600V 30A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存4,480
Silicon Carbide Schottky
600V
30A
1.7V @ 30A
100µA @ 600V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
LMB203SL-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: LMBS-1
封裝: -
Request a Quote
Standard
200 V
2 A
950 mV @ 1 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
LMBS-1
GBU12B-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 8.4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
100 V
8.4 A
1 V @ 12 A
5 µA @ 100 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
B80C5000A
Diotec Semiconductor

1PH BRIDGE 30X20X3.6 160V 5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 160 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 160 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIL
封裝: -
庫存1,464
Standard
160 V
4 A
1 V @ 5 A
5 µA @ 160 V
-50°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIL
VS-KBPC6005
Vishay General Semiconductor - Diodes Division

BRIDGE RECTIFIER 50V 6.0A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
封裝: -
Request a Quote
Standard
50 V
6 A
1.2 V @ 3 A
10 µA @ 50 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
DBI25-08A
Diotec Semiconductor

BRIDGE 3-PH DBI 800V 25A 175C

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 40 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP
  • Supplier Device Package: DBI
封裝: -
庫存891
Standard
800 V
40 A
1.05 V @ 12.5 A
5 µA @ 800 V
-50°C ~ 175°C (TJ)
Through Hole
5-SIP
DBI
TS15P07G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 15A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: -
庫存465
Standard
1 kV
15 A
1.1 V @ 15 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KMB14F
MDD

BRIDGE RECT 1PHASE 40V 1A KMB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 40 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 300 mA @ 40 V
  • Operating Temperature: -55°C ~ 1250°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: MBF
封裝: -
Request a Quote
Standard
40 V
1 A
550 mV @ 1 A
300 mA @ 40 V
-55°C ~ 1250°C (TJ)
Surface Mount
4-SMD, Flat Leads
MBF
GBU4DL-6419M3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 200V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
200 V
3 A
1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU1006G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 10A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: -
Request a Quote
Standard
800 V
10 A
1.1 V @ 10 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBPC2508
Solid State Inc.

25 AMP BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC
  • Supplier Device Package: KBPC
封裝: -
Request a Quote
Standard
800 V
25 A
1.2 V @ 12.5 A
10 µA @ 800 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC
KBPC
KBU805G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: -
Request a Quote
Standard
600 V
8 A
1.1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBP2MI_T0_00101
Panjit International Inc.

KBP, GENERAL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, KBP
  • Supplier Device Package: KBP
封裝: -
庫存8,361
Standard
1 kV
2 A
1.1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, KBP
KBP