頁 191 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  191/271
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封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot RS605
Diodes Incorporated

RECT SILICON 600V 6A RADIAL LEAD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-6
  • Supplier Device Package: RS-6
封裝: 4-SIP, RS-6
庫存32,808
Standard
600V
6A
1V @ 3A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, RS-6
RS-6
APTDC40H1201G
Microsemi Corporation

POWER MODULE DIODE 1200V 40A SP1

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Current - Reverse Leakage @ Vr: 800µA @ 1200V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封裝: SP1
庫存4,352
Silicon Carbide Schottky
1200V
40A
1.8V @ 40A
800µA @ 1200V
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
hot VUO86-16NO7
IXYS

RECT BRIDGE 3PH 1600V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 86A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
封裝: ECO-PAC1
庫存7,740
Standard
1600V
86A
1.14V @ 30A
40µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC1
ECO-PAC1
GBPC5001M T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC40-M
  • Supplier Device Package: GBPC40-M
封裝: 4-Square, GBPC40-M
庫存7,632
Standard
100V
50A
1.1V @ 25A
10µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC40-M
GBPC40-M
KBPC1501W
GeneSiC Semiconductor

DIODE BRIDGE 15A 100V 1PH KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
封裝: 4-Square, KBPC-W
庫存7,152
Standard
100V
15A
1.1V @ 7.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
GSIB620N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 6A 200V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
封裝: 4-SIP, GSIB-5S
庫存2,576
Standard
200V
6A
950mV @ 3A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
hot GBU4K-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存26,460
Standard
800V
3A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBL06
GeneSiC Semiconductor

DIODE BRIDGE 600V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: 4-SIP, GBL
庫存129,756
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DBL205G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
封裝: 4-DIP (0.300", 7.62mm)
庫存2,736
Standard
600V
2A
1.15V @ 2A
2µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
G2SBA80-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: 4-SIP, GBL
庫存5,488
Standard
800V
1.5A
1V @ 750mA
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DBLS203G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封裝: 4-SMD, Gull Wing
庫存3,200
Standard
200V
2A
1.15V @ 2A
2µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
3N253-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 50V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
封裝: 4-SIP, KBPM
庫存6,592
Standard
50V
2A
1.1V @ 3.14A
5µA @ 50V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
CBRHD-04 BK
Central Semiconductor Corp

RECT BRIDGE 500MA 400V 4HD DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-HD DIP
封裝: 4-SMD, Gull Wing
庫存2,000
Standard
400V
500mA
1V @ 400mA
5µA @ 400V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-HD DIP
DB101TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 1A DB-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-M
封裝: 4-EDIP (0.321", 8.15mm)
庫存6,656
Standard
50V
1A
1.1V @ 1A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-M
GBU8D-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 8A 200V GPP INLINE GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存2,864
Standard
200V
3.9A
1V @ 8A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DFB2580
Fairchild/ON Semiconductor

BRIDGE RECT 800V 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: 4-SIP, TS-6P
庫存16,716
Standard
800V
25A
1.1V @ 25A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
PB62-BP
Micro Commercial Co

RECTIFIER BRIDGE 6A 200V PB-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-6
  • Supplier Device Package: PB-6
封裝: 4-Square, PB-6
庫存31,722
Standard
200V
6A
1.1V @ 3A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, PB-6
PB-6
2W02G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 200V 1PH WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
封裝: 4-Circular, WOG
庫存18,216
Standard
200V
2A
1.1V @ 2A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOG
WOG
PB25005-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, PB
  • Supplier Device Package: PB
封裝: -
Request a Quote
Standard
50 V
25 A
1 V @ 12.5 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, PB
PB
KBU407G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 4A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: -
Request a Quote
Standard
1 kV
4 A
1.1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
HDBL104GH
Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
封裝: -
庫存15,000
Standard
400 V
1 A
1.3 V @ 1 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
483-02
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ME
  • Supplier Device Package: ME
封裝: -
Request a Quote
Standard
400 V
25 A
1.3 V @ 39 A
1 µA @ 400 V
-65°C ~ 175°C (TJ)
Chassis Mount
ME
ME
RS607
Rectron USA

BRIDGE RECT GLASS 1000V 6A RS-6L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
  • Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-6
  • Supplier Device Package: RS-6
封裝: -
Request a Quote
Standard
1 kV
6 A
1.05 V @ 6 A
200 nA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, RS-6
RS-6
803-4
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 150 V
  • Current - Average Rectified (Io): 22.5 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, MB
  • Supplier Device Package: MB
封裝: -
Request a Quote
Standard
150 V
22.5 A
950 mV @ 6 A
10 µA @ 150 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, MB
MB
DBL205G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 2A DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
封裝: -
庫存15,000
Standard
600 V
2 A
1.15 V @ 2 A
2 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
UR4KB80-B
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
封裝: -
庫存16,062
Standard
800 V
4 A
1 V @ 2 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
TS25P07GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: -
庫存3,600
Standard
1 kV
25 A
1.1 V @ 25 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
MF10S
Surge

1A -1000V - MBS (TO-269AA) - BRI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
封裝: -
Request a Quote
Standard
1 kV
500 mA
1.1 V @ 400 mA
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)