頁 478 - Diodes Incorporated 產品 | 黑森爾電子
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Diodes Incorporated 產品

記錄 22,098
頁  478/790
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FK4000041
Diodes Incorporated

OSCILLATOR XO 40.000MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 40MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 2.5V
  • Frequency Stability: ±20ppm
  • Operating Temperature: -20°C ~ 70°C
  • Current - Supply (Max): 10mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
  • Height - Seated (Max): 0.045" (1.15mm)
封裝: 4-SMD, No Lead
庫存5,040
DMTH6005LK3-13
Diodes Incorporated

MOSFET 60V 90A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,744
hot DMG1013UW-7
Diodes Incorporated

MOSFET P-CH 20V 820MA SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存464,280
DDTC115GE-7-F
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存22,542
DDTC143XE-7-F
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存138,024
DDZ9708S-7
Diodes Incorporated

DIODE ZENER 22V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 22V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 50nA @ 16.7V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
封裝: SC-76, SOD-323
庫存7,792
SB5100-B
Diodes Incorporated

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-201AD, Axial
庫存7,648
hot MBR1040
Diodes Incorporated

DIODE SCHOTTKY 40V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: TO-220-2
庫存18,792
SBRT20M60SP5-13D
Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 180µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: PowerDI? 5
庫存6,016
hot 1N4001-T
Diodes Incorporated

DIODE GEN PURP 50V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-204AL, DO-41, Axial
庫存37,800
hot BAW156T-7-F
Diodes Incorporated

DIODE ARRAY GP 85V 125MA SOT523

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 85V
  • Current - Average Rectified (Io) (per Diode): 125mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5nA @ 75V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存46,200
GBU1001
Diodes Incorporated

RECT BRIDGE GPP 10A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存7,792
hot ZXRE160AFT4-7
Diodes Incorporated

IC VREF SHUNT ADJ DFN2015

  • Reference Type: Shunt
  • Output Type: Adjustable
  • Voltage - Output (Min/Fixed): 0.2V
  • Voltage - Output (Max): 18V
  • Current - Output: 15mA
  • Tolerance: ±0.5%
  • Temperature Coefficient: -
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 1mA
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1520H4-6
封裝: 6-XFDFN Exposed Pad
庫存108,000
AP1703GWG-7
Diodes Incorporated

IC MPU RESET CIRC 2.25V SC59-3

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Push-Pull, Totem Pole
  • Reset: Active Low
  • Reset Timeout: 100 ms Minimum
  • Voltage - Threshold: 2.25V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存46,566
PI4ULS3V16AE
Diodes Incorporated

IC VOLT TRANSLATOR 56-TSSOP

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 2
  • Channels per Circuit: 8
  • Voltage - VCCA: 1.2V ~ 3.6V
  • Voltage - VCCB: 1.2V ~ 3.6V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Tri-State, Non-Inverted
  • Data Rate: 180Mbps
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: Auto-Direction Sensing
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 56-TSSOP
封裝: 56-TFSOP (0.240", 6.10mm Width)
庫存6,608
PI2DBS6212ZHEX-2017
Diodes Incorporated

IC MUX/DEMUX DUAL 2:1 28TQFN

  • Applications: Telecommunications
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Switch Circuit: -
  • Number of Channels: 2
  • On-State Resistance (Max): -
  • Voltage - Supply, Single (V+): 1.5 V ~ 1.8 V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 4.1GHz
  • Features: SATA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,304
hot SMBJ40A-13
Diodes Incorporated

TVS DIODE 40VWM 64.5VC SMB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 40V
  • Voltage - Breakdown (Min): 44.4V
  • Voltage - Clamping (Max) @ Ipp: 64.5V
  • Current - Peak Pulse (10/1000µs): 9.3A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
封裝: DO-214AA, SMB
庫存34,632
hot SMCJ24CA-13-F
Diodes Incorporated

TVS DIODE 24VWM 38.9VC SMC

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 24V
  • Voltage - Breakdown (Min): 26.7V
  • Voltage - Clamping (Max) @ Ipp: 38.9V
  • Current - Peak Pulse (10/1000µs): 38.6A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
封裝: DO-214AB, SMC
庫存25,548
PI7C9X2G304ELQZXAEX
Diodes Incorporated

PACKET SWITCH V-QFN8080-136 T&R

  • Applications: -
  • Interface: -
  • Voltage - Supply: -
  • Package / Case: -
  • Supplier Device Package: -
  • Mounting Type: -
封裝: -
庫存2,240
AP1186K5-50G-13
Diodes Incorporated

IC REG LINEAR 5V 1.5A TO263-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.38V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): 10mA
  • Current - Supply (Max): 150µA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
封裝: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
庫存2,208
PI3USB31531ZLCEX
Diodes Incorporated

IC USB3 SWITCH W-QFN3060-40

  • Applications: USB
  • Multiplexer/Demultiplexer Circuit: 6:4
  • Switch Circuit: -
  • Number of Channels: 4
  • On-State Resistance (Max): -
  • Voltage - Supply, Single (V+): 3V ~ 3.6V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 6GHz
  • Features: Bi-Directional, USB 3.1
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 40-WFQFN Exposed Pad
  • Supplier Device Package: 40-TQFN (3x6)
封裝: 40-WFQFN Exposed Pad
庫存5,760
DMP26M1UPS-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI5060

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.34W
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封裝: -
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ZXMS6008N8-13
Diodes Incorporated

LOW SIDE INTELLIFET SO-8 T&R 2.5

  • Switch Type: Relay, Solenoid Driver
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 60V
  • Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
  • Current - Output (Max): 1.1A
  • Rds On (Typ): 500mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: -
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DMT6017LFDF-13
Diodes Incorporated

MOSFET N-CH 65V 8.1A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 65 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
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DMN2024U-7
Diodes Incorporated

MOSFET N-CH 20V 6.8A SOT23 T&R 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存26,043
HDS20M-13
Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 2A HDS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: HDS
封裝: -
庫存63,723
AP7353-30FS4-7
Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4 (T

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.15V @ 250mA
  • Current - Output: 250mA
  • Current - Quiescent (Iq): 27 µA
  • Current - Supply (Max): -
  • PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: X2-DFN1010-4 (Type B)
封裝: -
Request a Quote
BZX84B43Q-7-F
Diodes Incorporated

TIGHT TOLERANCE ZENER SOT23 T&R

  • Voltage - Zener (Nom) (Vz): -
  • Tolerance: -
  • Power - Max: -
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote