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Alpha & Omega Semiconductor Inc. |
IGBT 600V 120A 417W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 120A
- Current - Collector Pulsed (Icm): 210A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 417W
- Switching Energy: 3.1mJ (on), 730µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 32ns/74ns
- Test Condition: 400V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 137ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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封裝: TO-247-3 |
庫存3,408 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封裝: - |
庫存6,816 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 10A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存4,224 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.2W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-VDFN Exposed Pad
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封裝: 8-VDFN Exposed Pad |
庫存7,408 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 16A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,928 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存474,252 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 46A 8ULTRASO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1452pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UltraSO-8?
- Package / Case: 3-PowerSMD, Flat Leads
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封裝: 3-PowerSMD, Flat Leads |
庫存773,292 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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封裝: TO-220-3 Full Pack |
庫存2,656 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 12A TO262F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存7,312 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 9A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 236W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存26,028 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 4.0A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封裝: TO-236-3, SC-59, SOT-23-3 |
庫存24,311,508 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 17A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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封裝: 8-PowerWDFN |
庫存28,620 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 20V 7.3A/5A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存127,200 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel Complementary
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A, 7A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,616 |
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Alpha & Omega Semiconductor Inc. |
IC REG BOOST ADJ 2A 10DFN
- Function: Step-Up
- Output Configuration: Positive
- Topology: Boost
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.7V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.7V
- Voltage - Output (Max): 24V
- Current - Output: 2A (Switch)
- Frequency - Switching: 600kHz, 1.2MHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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封裝: 10-WFDFN Exposed Pad |
庫存4,016 |
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Alpha & Omega Semiconductor Inc. |
IC LED DRVR RGLTR DIM 1.1A 10DFN
- Type: DC DC Regulator
- Topology: Step-Up (Boost)
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 53V
- Current - Output / Channel: 1.1A (Switch)
- Frequency: 800kHz
- Dimming: Analog, PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN-EP (3x3)
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封裝: 10-VFDFN Exposed Pad |
庫存5,184 |
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Alpha & Omega Semiconductor Inc. |
TVS DIODE 5VWM 14VC SOT23A
- Type: Zener
- Unidirectional Channels: 2
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 14V
- Current - Peak Pulse (10/1000µs): 32A (8/20µs)
- Power - Peak Pulse: 432W
- Power Line Protection: No
- Applications: Ethernet, Telecom
- Capacitance @ Frequency: 25pF @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23A-3
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封裝: TO-236-3, SC-59, SOT-23-3 |
庫存76,908 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK QFN
- Function: -
- Output Configuration: -
- Topology: -
- Output Type: -
- Number of Outputs: -
- Voltage - Input (Min): -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: -
- Synchronous Rectifier: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封裝: - |
庫存3,616 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 6A/5A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封裝: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 20A/85A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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封裝: - |
Request a Quote |
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|
|
Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封裝: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 4DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN
- Supplier Device Package: 4-DFN (1.7x1.7)
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封裝: - |
庫存9,000 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 7A/5.7A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
- Power - Max: 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
封裝: - |
Request a Quote |
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|
|
Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
封裝: - |
Request a Quote |
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|
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 12V 30A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (2.98x1.49)
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封裝: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 28A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封裝: - |
庫存3,804 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 7.2A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x5)
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封裝: - |
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Alpha & Omega Semiconductor Inc. |
25V/30A DRMOS 5V PWM IN QFN3.5X4
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 30A
- Current - Peak Output: 80A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 25V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation
- Fault Protection: Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 22-PowerVFQFN Module
- Supplier Device Package: 22-QFN (4.5x3.5)
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封裝: - |
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