Maxim DS TVS DIODE

DS28E15G+T

Maxim Integrated

IC EEPROM 512BIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512b (512 x 1)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-WFDFN
• Supplier Device Package: 2-SFN (3.5mmx6.5mm)

封裝: 2-WFDFN

DS28E22Q+T

Maxim Integrated

IC EEPROM 2KBIT 1WIRE 6TDFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (2K x 1)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN-EP (3x3)

封裝: 6-WDFN Exposed Pad

DS28EL15Q+T

Maxim Integrated

IC EEPROM 512BIT 1WIRE 6TDFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512b (256 x 2)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN-EP (3x3)

封裝: 6-WDFN Exposed Pad

DS28E11P+T

Maxim Integrated

1-W 256B EEPROM W/SHA-256 TSOC T

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

DS28E11P+

Maxim Integrated

1-W 256B EEPROM W/SHA-256 TSOC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

DS28E10P+T

Maxim Integrated

1-W PROTECT 192B EPROM W/SHA1,TN

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - OTP
• Memory Size: 224b (28 x 8)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

DS2431GB+T

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: 2-SFN (3.5x5)

封裝: 2-XDFN

DS2431G+T&R

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-SFN
• Supplier Device Package: 2-SFN (6x6)

封裝: 2-SFN

DS2431GA+T&R

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-WFDFN
• Supplier Device Package: 2-SFN (3.5mmx6.5mm)

封裝: 2-WFDFN

DS28E07Q+T

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6DFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN (3x3)

封裝: 6-WDFN Exposed Pad

DS28E07P+

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TSOC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-LSOJ (0.148", 3.76mm Width)
• Supplier Device Package: 6-TSOC

封裝: 6-LSOJ (0.148", 3.76mm Width)

DS28E10R+T

Maxim Integrated

1-W PROTECT 192B EPROM W/SHA1,SO

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - OTP
• Memory Size: 224b (28 x 8)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

DS28E07P+T

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TSOC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-LSOJ (0.148", 3.76mm Width)
• Supplier Device Package: 6-TSOC

封裝: 6-LSOJ (0.148", 3.76mm Width)

DS28E07+T

Maxim Integrated

IC EEPROM 1KBIT 1WIRE TO92

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

DS28E05GB+T

Maxim Integrated

IC EEPROM 896BIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 896b (112 x 8)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: 2-SFN (3.5x5)

封裝: 2-XDFN

DS28E05P+T

Maxim Integrated

IC EEPROM 896BIT 1WIRE 6TSOC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 896b (112 x 8)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-LSOJ (0.148", 3.76mm Width)
• Supplier Device Package: 6-TSOC

封裝: 6-LSOJ (0.148", 3.76mm Width)

DS1225AB-70IND+

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封裝: 28-DIP Module (0.600", 15.24mm)

DS1220AB-150+

Maxim Integrated

IC NVSRAM 16KBIT 150NS 24EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 150ns
• Access Time: 150ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 24-EDIP

封裝: 24-DIP Module (0.600", 15.24mm)

DS2502G+U

Maxim Integrated

IC OTP 1KBIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - OTP
• Memory Size: 1Kb (1K x 1)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 15µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-SFN
• Supplier Device Package: 2-SFN (6x6)

封裝: 2-SFN

DS2431G+U

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-SFN
• Supplier Device Package: 2-SFN (6x6)

封裝: 2-SFN

DS28E15Q+U

Maxim Integrated

IC EEPROM 512BIT 1WIRE 6DFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512b (512 x 1)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN-EP (3x3)

封裝: 6-WDFN Exposed Pad

DS1265AB-70IND+

Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 8Mb (1M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 36-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 36-EDIP

封裝: 36-DIP Module (0.600", 15.24mm)

DS1265W-150+

Maxim Integrated

IC NVSRAM 8MBIT 150NS 36EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 8Mb (1M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 150ns
• Access Time: 150ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 36-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 36-EDIP

封裝: 36-DIP Module (0.600", 15.24mm)

DS1265AB-100+

Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 8Mb (1M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 36-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 36-EDIP

封裝: 36-DIP Module (0.600", 15.24mm)

DS1250WP-100IND+

Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

封裝: 34-PowerCap? Module

DS1250Y-100IND+

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封裝: 32-DIP Module (0.600", 15.24mm)

DS1350YP-70+

Maxim Integrated

IC NVSRAM 4MBIT 70NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

封裝: 34-PowerCap? Module

DS1350WP-100+

Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

封裝: 34-PowerCap? Module